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Extract from the Register of European Patents

EP About this file: EP3896694

EP3896694 - WRITE OPERATION CIRCUIT, SEMICONDUCTOR MEMORY, AND WRITE OPERATION METHOD [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  10.05.2024
Database last updated on 22.08.2024
FormerThe patent has been granted
Status updated on  02.06.2023
FormerGrant of patent is intended
Status updated on  16.04.2023
FormerRequest for examination was made
Status updated on  17.09.2021
FormerThe international publication has been made
Status updated on  01.05.2021
Most recent event   Tooltip02.08.2024Lapse of the patent in a contracting state
New state(s): SI		published on 04.09.2024 [2024/36]
Applicant(s)For all designated states
Changxin Memory Technologies, Inc.
No. 388, Xingye Avenue
Airport Industrial Park
Economic and Technological Development Area
Hefei City, Anhui 230000 / CN
[2023/27]
Former [2021/42]For all designated states
Changxin Memory Technologies, Inc.
No. 388, Xingye Avenue
Airport Industrial Park
Economic and Technological Development Area
230000 Hefei City, Anhui / CN
Inventor(s)01 / ZHANG, Liang
Unit 801, 802, 805 (9th Floor, Nominal Floor),
Building 1 No. 1438, Hongqiao Road
Changning District
Shanghai 200336 / CN
 [2023/27]
Former [2021/42]01 / ZHANG, Liang
Unit 801, 802, 805 (9th Floor, Nominal Floor),
Building 1 No. 1438, Hongqiao Road, Changning
District
Shanghai 200336 / CN
Representative(s)V.O.
P.O. Box 87930
2508 DH Den Haag / NL
[2021/42]
Application number, filing date20878752.322.06.2020
[2021/42]
WO2020CN97504
Priority number, dateCN2019112146025.10.2019         Original published format: CN201911021460
[2021/42]
Filing languageZH
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2021077783
Date:29.04.2021
Language:ZH
[2021/17]
Type: A1 Application with search report 
No.:EP3896694
Date:20.10.2021
Language:EN
[2021/42]
Type: B1 Patent specification 
No.:EP3896694
Date:05.07.2023
Language:EN
[2023/27]
Search report(s)International search report - published on:CN29.04.2021
(Supplementary) European search report - dispatched on:EP14.02.2022
ClassificationIPC:G11C11/409, G11C7/10
[2022/11]
CPC:
G06F13/1668 (EP,US); G11C11/409 (CN); G11C11/4093 (EP,US);
G11C11/4096 (EP,US); G11C7/1006 (EP); G11C7/1048 (EP);
G11C7/1084 (EP); H03M9/00 (EP,US); G11C7/10 (US);
G11C7/1012 (EP); G11C7/1018 (EP); Y02D10/00 (EP) (-)
Former IPC [2021/42]G11C11/409
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2021/42]
Extension statesBANot yet paid
MENot yet paid
Validation statesKHNot yet paid
MANot yet paid
MDNot yet paid
TNNot yet paid
TitleGerman:SCHREIBOPERATIONSSCHALTUNG, HALBLEITERSPEICHER UND SCHREIBOPERATIONSVERFAHREN[2021/42]
English:WRITE OPERATION CIRCUIT, SEMICONDUCTOR MEMORY, AND WRITE OPERATION METHOD[2021/42]
French:CIRCUIT D'OPÉRATION D'ÉCRITURE, MÉMOIRE À SEMI-CONDUCTEURS, ET PROCÉDÉ D'OPÉRATION D'ÉCRITURE[2021/42]
Entry into regional phase14.07.2021Translation filed 
14.07.2021National basic fee paid 
14.07.2021Search fee paid 
14.07.2021Designation fee(s) paid 
14.07.2021Examination fee paid 
Examination procedure14.07.2021Examination requested  [2021/42]
02.09.2022Amendment by applicant (claims and/or description)
17.04.2023Communication of intention to grant the patent
25.05.2023Fee for grant paid
25.05.2023Fee for publishing/printing paid
25.05.2023Receipt of the translation of the claim(s)
Opposition(s)08.04.2024No opposition filed within time limit [2024/24]
Fees paidRenewal fee
22.03.2022Renewal fee patent year 03
31.03.2023Renewal fee patent year 04
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Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipAT05.07.2023
CZ05.07.2023
DK05.07.2023
EE05.07.2023
ES05.07.2023
FI05.07.2023
HR05.07.2023
IT05.07.2023
LT05.07.2023
LV05.07.2023
NL05.07.2023
PL05.07.2023
RO05.07.2023
RS05.07.2023
SE05.07.2023
SI05.07.2023
SK05.07.2023
SM05.07.2023
NO05.10.2023
GR06.10.2023
IS05.11.2023
PT06.11.2023
[2024/36]
Former [2024/27]AT05.07.2023
CZ05.07.2023
DK05.07.2023
EE05.07.2023
ES05.07.2023
FI05.07.2023
HR05.07.2023
IT05.07.2023
LT05.07.2023
LV05.07.2023
NL05.07.2023
PL05.07.2023
RO05.07.2023
RS05.07.2023
SE05.07.2023
SK05.07.2023
SM05.07.2023
NO05.10.2023
GR06.10.2023
IS05.11.2023
PT06.11.2023
Former [2024/23]AT05.07.2023
CZ05.07.2023
DK05.07.2023
EE05.07.2023
ES05.07.2023
FI05.07.2023
HR05.07.2023
LT05.07.2023
LV05.07.2023
NL05.07.2023
PL05.07.2023
RO05.07.2023
RS05.07.2023
SE05.07.2023
SK05.07.2023
SM05.07.2023
NO05.10.2023
GR06.10.2023
IS05.11.2023
PT06.11.2023
Former [2024/22]AT05.07.2023
CZ05.07.2023
DK05.07.2023
ES05.07.2023
FI05.07.2023
HR05.07.2023
LT05.07.2023
LV05.07.2023
NL05.07.2023
PL05.07.2023
RO05.07.2023
RS05.07.2023
SE05.07.2023
SM05.07.2023
NO05.10.2023
GR06.10.2023
IS05.11.2023
PT06.11.2023
Former [2024/20]AT05.07.2023
ES05.07.2023
FI05.07.2023
HR05.07.2023
LT05.07.2023
LV05.07.2023
NL05.07.2023
PL05.07.2023
RS05.07.2023
SE05.07.2023
SM05.07.2023
NO05.10.2023
GR06.10.2023
IS05.11.2023
PT06.11.2023
Former [2024/10]AT05.07.2023
ES05.07.2023
FI05.07.2023
HR05.07.2023
LT05.07.2023
LV05.07.2023
NL05.07.2023
PL05.07.2023
RS05.07.2023
SE05.07.2023
NO05.10.2023
GR06.10.2023
IS05.11.2023
PT06.11.2023
Former [2024/09]AT05.07.2023
ES05.07.2023
FI05.07.2023
LT05.07.2023
NL05.07.2023
SE05.07.2023
NO05.10.2023
GR06.10.2023
IS05.11.2023
Former [2024/08]LT05.07.2023
NL05.07.2023
NO05.10.2023
GR06.10.2023
Former [2024/05]NL05.07.2023
Documents cited:Search[Y]US6859402  (CAMPBELL BRIAN J [US], et al) [Y] 1-3,6-10 * columns 2-8; figures 1-10 *;
 [A]US2015095520  (KWACK SEUNG WOOK [KR]) [A] 1-10* the whole document *;
 [YA]US2015356047  (AYYAPUREDDI SUJEET [US], et al) [Y] 1-3,6-10 * paragraphs [0001] , [0 10] - [0044]; figures 1-6 * [A] 4,5;
 [A]US10373657  (KONDO CHIKARA [JP], et al) [A] 1-10 * the whole document *
International search[A]US2010042889  (HARGAN EBRAHIM [US]) [A] 1-10* entire document *;
 [A]CN104681085  (INST OF MICROELECTRONICS CAS) [A] 1-10 * entire document *;
 [A]CN107545918  (PHISON ELECTRONICS CORP) [A] 1-10 * description, paragraphs 72-78 *;
 [A]CN108872837  (CHANGXIN MEMORY TECH INC) [A] 1-10 * entire document *;
 [A]CN109582507  (XIAN UNIIC SEMICONDUCTORS CO LTD) [A] 1-10 * description, paragraphs 5-30 *;
 [PX]CN210575117U  (CHANGXIN STORAGE TECH SHANGHAI CO LTD) [PX] 1-10 * entire document *
by applicantCN20191121460
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.