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Extract from the Register of European Patents

EP About this file: EP4050132

EP4050132 - SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND SEMICONDUCTOR SUBSTRATE [Right-click to bookmark this link]
StatusRequest for examination was made
Status updated on  29.07.2022
Database last updated on 12.07.2024
FormerThe international publication has been made
Status updated on  01.05.2021
Most recent event   Tooltip13.05.2024The date on which the examining division becomes responsible, has been established 
13.05.2024Amendment by applicant 
Applicant(s)For all designated states
Shin-Etsu Handotai Co., Ltd.
2-1, Ohtemachi 2-chome
Chiyoda-ku
Tokyo 100-0004 / JP
[2022/35]
Inventor(s)01 / NIITANI, Miho
c/o Nagano Electronics Industrial Co., Ltd., 1393
Oaza Yashiro
Chikuma-shi, Nagano 387-8555 / JP
02 / WAKABAYASHI, Taishi
c/o Nagano Electronics Industrial Co., Ltd., 1393
Oaza Yashiro
Chikuma-shi, Nagano 387-8555 / JP
03 / YAMADA, Kento
c/o Nagano Electronics Industrial Co., Ltd., 1393
Oaza Yashiro
Chikuma-shi, Nagano 387-8555 / JP
04 / YOSHIDA, Kazuhiko
c/o Nagano Electronics Industrial Co., Ltd., 1393
Oaza Yashiro
Chikuma-shi, Nagano 387-8555 / JP
 [2022/35]
Representative(s)Sonnenhauser, Thomas Martin
Wuesthoff & Wuesthoff
Patentanwälte und Rechtsanwalt PartG mbB
Schweigerstraße 2
81541 München / DE
[N/P]
Former [2022/35]Sonnenhauser, Thomas Martin
Wuesthoff & Wuesthoff
Patentanwälte PartG mbB
Schweigerstraße 2
81541 München / DE
Application number, filing date20879022.008.10.2020
[2022/35]
WO2020JP38088
Priority number, dateJP2019019354724.10.2019         Original published format: JP 2019193547
[2022/35]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2021079745
Date:29.04.2021
Language:JA
[2021/17]
Type: A1 Application with search report 
No.:EP4050132
Date:31.08.2022
Language:EN
[2022/35]
Search report(s)International search report - published on:JP29.04.2021
(Supplementary) European search report - dispatched on:EP25.10.2023
ClassificationIPC:C30B25/18, H01L21/20, H01L21/205, H01L21/31, H01L21/318, H01L27/12, C30B29/38, C23C16/24, C23C28/00, C30B29/08, C30B29/06, H01L21/02, C23C16/02, H01L21/762, C30B29/52
[2023/47]
CPC:
H01L21/7624 (EP,KR,US); H01L21/02381 (EP,CN,KR,US); C23C16/0272 (EP);
C23C16/24 (EP); C23C28/30 (EP); C23C28/34 (EP);
C23C28/40 (EP); C23C28/42 (EP); C30B25/183 (EP,CN,US);
C30B25/186 (KR,US); C30B29/06 (EP,CN,KR,US); C30B29/08 (EP,CN);
C30B29/10 (CN); C30B29/38 (CN); C30B29/52 (EP);
C30B33/02 (KR); H01L21/0217 (EP,KR,US); H01L21/02247 (EP,KR,US);
H01L21/02255 (EP,KR,US); H01L21/02428 (KR); H01L21/02433 (EP,KR,US);
H01L21/0245 (EP,US); H01L21/02488 (EP,CN,KR,US); H01L21/02507 (EP,US);
H01L21/02513 (EP,US); H01L21/02521 (CN); H01L21/02532 (EP,CN,KR,US);
H01L21/0254 (EP,KR,US); H01L21/02598 (CN,KR); H01L21/0262 (EP,CN,KR,US);
H01L21/31 (CN); H01L27/1203 (CN,US) (-)
Former IPC [2022/35]C30B25/18, H01L21/20, H01L21/205, H01L21/31, H01L21/318, H01L27/12, C30B29/38
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2022/35]
TitleGerman:HALBLEITERSUBSTRATHERSTELLUNGSVERFAHREN UND HALBLEITERSUBSTRAT[2022/35]
English:SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND SEMICONDUCTOR SUBSTRATE[2022/35]
French:PROCÉDÉ DE FABRICATION DE SUBSTRAT SEMI-CONDUCTEUR ET SUBSTRAT SEMI-CONDUCTEUR[2022/35]
Entry into regional phase13.04.2022Translation filed 
13.04.2022National basic fee paid 
13.04.2022Search fee paid 
13.04.2022Designation fee(s) paid 
13.04.2022Examination fee paid 
Examination procedure13.04.2022Examination requested  [2022/35]
13.05.2024Amendment by applicant (claims and/or description)
13.05.2024Date on which the examining division has become responsible
Fees paidRenewal fee
27.10.2022Renewal fee patent year 03
26.10.2023Renewal fee patent year 04
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Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[XI]JPH11265853  (MITSUBISHI MATERIALS CORP, et al) [X] 1-4,6,9-12,14 * paragraphs [0006] - [0026]; figure 1; claims 1-4 * [I] 5,8;
 [XI]US7012016  (GWO SHANGJR [TW]) [X] 1,2,4,6,9-12,14 * column 2, line 20 - column 8, line 52; figure -; claim - *[I] 5,8;
 [XI]US2015194308  (FLAMMINI ROBERTO [IT], et al) [X] 1-4,7,9-11,13,14 * paragraphs [0011] - [0059]; figures 1-4; claim - * [I] 5,8
International search[A]JP2000315790  (MITSUBISHI ELECTRIC CORP) [A] 1-14;
 [A]JP2008504715  [A] 1-14;
 [A]JP2015228432  (SHINETSU HANDOTAI KK) [A] 1-14;
 [A]JP2019129315  (SHENYANG SILICON TECH CO LTD) [A] 1-14
by applicantJPS525840B
 WO2004010505
 JP5168990B
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.