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Extract from the Register of European Patents

EP Citations: EP3920251

Cited inSearch
Type:Patent literature
Publication No.:CN110400890  [A]
 (CHANGCHUN INST OPTICS FINE MECH & PHYSICS CAS) [A] 1-14* page 5 - page 11; figures 1,2,7 *;
Type:Patent literature
Publication No.:EP3656833  [Y]
 (SAMSUNG DISPLAY CO LTD [KR]) [Y] 13 * paragraphs [0200] , [0203]; figure 3 *;
Type:Non-patent literature
Publication information:   [XAYI] - LIU SHIHAO ET AL, "Top-emitting quantum dots light-emitting devices employing microcontact printing with electricfield-independent emission", SCIENTIFIC REPORTS, (20160302), vol. 6, no. 1, doi:10.1038/srep22530, XP055821260 [X] 1,7,9,11,12 * page 1 - page 6; figures 1,3,5; table 1 * [A] 4-6 [Y] 2,3,8,10,13 [I] 14
DOI: http://dx.doi.org/10.1038/srep22530
Type:Non-patent literature
Publication information:[Y]  - LIU GUOHONG ET AL, "Very Bright and Efficient Microcavity Top-Emitting Quantum Dot Light-Emitting Diodes with Ag Electrodes", APPLIED MATERIALS & INTERFACES, US, (20160624), vol. 8, no. 26, doi:10.1021/acsami.6b03367, ISSN 1944-8244, pages 16768 - 16775, XP055846389 [Y] 2,8 * figure 1; table 1 *
DOI: http://dx.doi.org/10.1021/acsami.6b03367
Type:Non-patent literature
Publication information:[Y]  - LI DONG ET AL, "Enhanced Efficiency of InP-Based Red Quantum Dot Light-Emitting Diodes", APPLIED MATERIALS & INTERFACES, US, (20190823), vol. 11, no. 37, doi:10.1021/acsami.9b07437, ISSN 1944-8244, pages 34067 - 34075, XP055832908 [Y] 3,10 * page 34068 - page 34069; figures 1b, 2, 4 *
DOI: http://dx.doi.org/10.1021/acsami.9b07437
Type:Non-patent literature
Publication information:[A]  - WHALEN M. S. ET AL, "Index of refraction of n -type InP at 0.633- and 1.15-[mu]m wavelengths as a function of carrier concentration", JOURNAL OF APPLIED PHYSICS, US, (19820601), vol. 53, no. 6, doi:10.1063/1.331213, ISSN 0021-8979, pages 4340 - 4343, XP055847125 [A] 3 * page 4342 - page 4343; figure 5 *
DOI: http://dx.doi.org/10.1063/1.331213
Type:Non-patent literature
Publication information:[A]  - ZHANG DONG-YAN ET AL, "First-principles simulation and experimental evidence for improvement of transmittance in ZnO films", PROGRESS IN NATURAL SCIENCE, (20120316), vol. 21, no. 1, doi:10.1016/S1002-0071(12)60023-9, ISSN 1002-0071, pages 40 - 45, XP028908243 [A] 3 * page 43 - page 44; figure 5 *
DOI: http://dx.doi.org/10.1016/S1002-0071(12)60023-9