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EP3916138
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EP About this file: EP3916138
| EP3916138 - METHOD OF MANUFACTURING SILICON CARBIDE INGOT AND SYSTEM FOR MANUFACTURING SILICON CARBIDE INGOT [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 29.10.2021 Database last updated on 29.10.2024 | Most recent event Tooltip | 22.03.2024 | New entry: Renewal fee paid | Applicant(s) | For all designated states SENIC Inc. 17-15, 4sandan 7-ro, Jiksan-eup Seobuk-gu, Cheonan-si Chungcheongnam-do / KR | [2022/10] |
| Former [2022/07] | For all designated states SENIC Inc. 23F., City Air Tower, 36 Teheran-ro 87-gil Gangnam-gu Seoul, 06164 / KR | ||
| Former [2021/48] | For all designated states SKC Co., Ltd. 84, Jangan-ro 309beon-gil Jangan-gu Suwon-si Gyeonggi-do / KR | Inventor(s) | 01 /
JANG, Byung Kyu 16332 Suwon-si, Gyeonggi-do / KR | 02 /
PARK, Jong Hwi 16205 Suwon-si, Gyeonggi-do / KR | 03 /
YANG, Eun Su 16327 Suwon-si, Gyeonggi-do / KR | 04 /
CHOI, Jung Woo 16328 Suwon-si, Gyeonggi-do / KR | 05 /
KO, Sang Ki 16356 Suwon-si, Gyeonggi-do / KR | 06 /
KU, Kap Ryeol 16336 Suwon-si, Gyeonggi-do / KR | 07 /
KIM, Jung-Gyu 16327 Suwon-si, Gyeonggi-do / KR | [2021/48] | Representative(s) | BCKIP Part mbB Siegfriedstraße 8 80803 München / DE | [N/P] |
| Former [2021/48] | BCKIP Siegfriedstraße 8 80803 München / DE | Application number, filing date | 21175297.7 | 21.05.2021 | [2021/48] | Priority number, date | KR20200064719 | 29.05.2020 Original published format: KR 20200064719 | [2021/48] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP3916138 | Date: | 01.12.2021 | Language: | EN | [2021/48] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 08.10.2021 | Classification | IPC: | C30B23/06, C30B29/36 | [2021/48] | CPC: |
C30B29/36 (EP,KR,US);
C30B23/002 (KR,US);
C30B23/06 (EP,KR,US)
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2022/19] |
| Former [2021/48] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Extension states | BA | Not yet paid | ME | Not yet paid | Validation states | KH | Not yet paid | MA | Not yet paid | MD | Not yet paid | TN | Not yet paid | Title | German: | VERFAHREN ZUR HERSTELLUNG EINES SILICIUMCARBIDBLOCKS UND SYSTEM ZUR HERSTELLUNG EINES SILICIUMCARBIDBLOCKS | [2021/48] | English: | METHOD OF MANUFACTURING SILICON CARBIDE INGOT AND SYSTEM FOR MANUFACTURING SILICON CARBIDE INGOT | [2021/48] | French: | PROCÉDÉ DE FABRICATION D'UN LINGOT EN CARBURE DE SILICIUM ET SYSTÈME DE FABRICATION D'UN LINGOT EN CARBURE DE SILICIUM | [2021/48] | Examination procedure | 21.05.2021 | Examination requested [2021/48] | 11.04.2022 | Amendment by applicant (claims and/or description) | Fees paid | Renewal fee | 25.03.2023 | Renewal fee patent year 03 | 21.03.2024 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [I]US2014220298 (LOBODA MARK [US]) [I] 8 * paragraphs [0031] , [0 67] - [0070] *; | [XI]CN106906515 (UNIV SHANDONG) [X] 1-3,9 * example 3 * * paragraphs [0019] , [0 27] , [0 32] , [0 47] - [0054] * * figures 1, 2 * [I] 4-7,10; | [A] - KLEIN O ET AL, "Transient numerical investigation of induction heating during sublimation growth of silicon carbide single crystals", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, (20030101), vol. 247, no. 1-2, doi:10.1016/S0022-0248(02)01903-6, ISSN 0022-0248, pages 219 - 235, XP004395088 [A] 1-7,9,10 * figure 8 * DOI: http://dx.doi.org/10.1016/S0022-0248(02)01903-6 |