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EP3965164
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EP About this file: EP3965164
| EP3965164 - FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 02.04.2022 Database last updated on 02.11.2024 | |
| Former | The application has been published Status updated on 04.02.2022 | Most recent event Tooltip | 29.07.2024 | New entry: Renewal fee paid | Applicant(s) | For all designated states Samsung Electronics Co., Ltd. 129, Samsung-ro Yeongtong-gu Suwon-si, Gyeonggi-do 16677 / KR | [2022/10] | Inventor(s) | 01 /
SEOL, Minsu 16678, Suwon-si / KR | 02 /
LEE, Minhyun 16678, Suwon-si / KR | 03 /
KWON, Junyoung 16678, Suwon-si / KR | 04 /
SHIN, Hyeonjin 16678, Suwon-si / KR | 05 /
YOO, Minseok 16678, Suwon-si / KR | [2022/10] | Representative(s) | Elkington and Fife LLP Prospect House 8 Pembroke Road Sevenoaks, Kent TN13 1XR / GB | [2022/10] | Application number, filing date | 21190601.1 | 10.08.2021 | [2022/10] | Priority number, date | KR20200113205 | 04.09.2020 Original published format: KR 20200113205 | [2022/10] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP3965164 | Date: | 09.03.2022 | Language: | EN | [2022/10] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 02.02.2022 | Classification | IPC: | H01L29/06, H01L29/778, H01L29/66, // H01L29/16, H01L29/24, H01L29/417 | [2022/10] | CPC: |
H01L29/778 (EP);
H01L29/78696 (KR,US);
H01L29/1033 (CN);
H01L21/823412 (US);
H01L21/02521 (US);
H01L21/02527 (US);
H01L21/02568 (US);
H01L21/0257 (KR);
H01L21/0259 (KR,US);
H01L21/823431 (US);
H01L29/0665 (EP,US);
H01L29/0673 (KR);
H01L29/1606 (EP,US);
H01L29/24 (EP,US);
H01L29/42392 (KR,US);
H01L29/66045 (EP,US);
H01L29/66742 (CN);
H01L29/66772 (KR);
H01L29/66969 (EP,US);
H01L29/7606 (US);
H01L29/786 (CN);
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2022/18] |
| Former [2022/10] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Extension states | BA | Not yet paid | ME | Not yet paid | Validation states | KH | Not yet paid | MA | Not yet paid | MD | Not yet paid | TN | Not yet paid | Title | German: | FELDEFFEKTTRANSISTOR UND VERFAHREN ZU SEINER HERSTELLUNG | [2022/10] | English: | FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME | [2022/10] | French: | TRANSISTOR À EFFET DE CHAMP ET SON PROCÉDÉ DE FABRICATION | [2022/10] | Examination procedure | 31.03.2022 | Examination requested [2022/18] | 31.03.2022 | Date on which the examining division has become responsible | 08.09.2022 | Amendment by applicant (claims and/or description) | Fees paid | Renewal fee | 27.07.2023 | Renewal fee patent year 03 | 29.07.2024 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]US10388732 (FROUGIER JULIEN [US], et al) |