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Extract from the Register of European Patents

EP About this file: EP3996134

EP3996134 - CHIP AND MEMORY [Right-click to bookmark this link]
StatusThe patent has been granted
Status updated on  03.05.2024
Database last updated on 24.08.2024
FormerGrant of patent is intended
Status updated on  04.02.2024
FormerExamination is in progress
Status updated on  02.03.2023
FormerRequest for examination was made
Status updated on  08.04.2022
FormerThe international publication has been made
Status updated on  23.03.2022
Formerunknown
Status updated on  24.09.2021
Most recent event   Tooltip06.06.2024Deletion: Renewal fee paid 
Applicant(s)For all designated states
Changxin Memory Technologies, Inc.
No. 388, Xingye Avenue
Airport Industrial Park
Economic and Technological Development Area
Hefei City, Anhui 230000 / CN
[2024/23]
Former [2022/19]For all designated states
Changxin Memory Technologies, Inc.
No. 388, Xingye Avenue
Airport Industrial Park
Economic and Technological Development Area
230000 Hefei City, Anhui / CN
Inventor(s)01 / CHANG, Chih-Wei
Hefei Anhui 230000 / CN
 [2022/19]
Representative(s)Lavoix
Bayerstraße 83
80335 München / DE
[2022/19]
Application number, filing date21769871.108.06.2021
[2022/19]
WO2021CN98839
Priority number, dateCN20201095012309.09.2020         Original published format: CN202010950123
[2022/19]
Filing languageZH
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2022052531
Date:17.03.2022
Language:ZH
[2022/11]
Type: A1 Application with search report 
No.:EP3996134
Date:11.05.2022
Language:EN
[2022/19]
Type: B1 Patent specification 
No.:EP3996134
Date:05.06.2024
Language:EN
[2024/23]
Search report(s)International search report - published on:CN17.03.2022
(Supplementary) European search report - dispatched on:EP09.06.2022
ClassificationIPC:H01L23/48, H01L23/58, H01L21/764, // H01L21/768, H01L25/065
[2024/08]
CPC:
H01L21/764 (EP,US); H01L23/562 (EP,US); H01L21/76224 (EP);
H01L23/481 (EP,US); H01L25/0657 (EP,US); H01L29/0649 (US);
H10B12/00 (EP); H01L21/7682 (EP); H01L2225/06541 (US) (-)
Former IPC [2022/27]H01L23/48, H01L21/764, // H01L21/768
Former IPC [2022/19]H01L23/528
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2022/19]
Extension statesBANot yet paid
MENot yet paid
Validation statesKHNot yet paid
MANot yet paid
MDNot yet paid
TNNot yet paid
TitleGerman:CHIP UND SPEICHER[2022/19]
English:CHIP AND MEMORY[2022/19]
French:PUCE ET MÉMOIRE[2022/19]
Entry into regional phase23.09.2021Translation filed 
23.09.2021National basic fee paid 
23.09.2021Search fee paid 
23.09.2021Designation fee(s) paid 
23.09.2021Examination fee paid 
Examination procedure23.09.2021Examination requested  [2022/19]
02.12.2022Amendment by applicant (claims and/or description)
02.12.2022Date on which the examining division has become responsible
01.03.2023Despatch of a communication from the examining division (Time limit: M04)
07.06.2023Reply to a communication from the examining division
05.02.2024Communication of intention to grant the patent
25.04.2024Fee for grant paid
25.04.2024Fee for publishing/printing paid
25.04.2024Receipt of the translation of the claim(s)
Fees paidRenewal fee
31.03.2023Renewal fee patent year 03
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[XY]US2012292746  (LEE DOSUN [KR], et al);
 [XYI]US2013140680  (HARADA YOSHINAO [JP], et al);
 [A]CN103367318B
International search[X]EP2408006  (IMEC [BE]);
 [A]CN103021935  (SH INTEGRATED CIRCUIT RES & DE);
 [X]CN104078414  (SEMICONDUCTOR MFG INT CORP);
 [X]CN104253082  (SEMICONDUCTOR MFG INT SHANGHAI)
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.