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EP4260368
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EP About this file: EP4260368
| EP4260368 - 3D PACKAGING WITH SILICON DIE AS THERMAL SINK FOR HIGH-POWER LOW THERMAL CONDUCTIVITY DIES [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 15.09.2023 Database last updated on 02.11.2024 | |
| Former | The international publication has been made Status updated on 17.06.2022 | ||
| Former | unknown Status updated on 18.02.2022 | Most recent event Tooltip | 16.02.2024 | Change: Validation states | published on 20.03.2024 [2024/12] | 16.02.2024 | Change - extension states | published on 20.03.2024 [2024/12] | Applicant(s) | For all designated states Qorvo US, Inc. 7628 Thorndike Road Greensboro, NC 27409 / US | [2023/42] | Inventor(s) | 01 /
MAXIM, George San Jose, California 95134 / US | 02 /
COSTA, Julio C. Greensboro, North Carolina 27409 / US | 03 /
LEIPOLD, Dirk Robert Walter San Jose, California 95134 / US | 04 /
SCOTT, Baker San Jose, California 95134 / US | [2023/42] | Representative(s) | D Young & Co LLP 3 Noble Street London EC2V 7BQ / GB | [N/P] |
| Former [2023/42] | D Young & Co LLP 120 Holborn London EC1N 2DY / GB | Application number, filing date | 21854899.8 | 13.12.2021 | [2023/42] | WO2021US63095 | Priority number, date | US202063124450P | 11.12.2020 Original published format: US 202063124450 P | [2023/42] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | WO2022126017 | Date: | 16.06.2022 | Language: | EN | [2022/24] | Type: | A2 Application without search report | No.: | EP4260368 | Date: | 18.10.2023 | Language: | EN | The application published by WIPO in one of the EPO official languages on 16.06.2022 takes the place of the publication of the European patent application. | [2023/42] | Search report(s) | International search report - published on: | EP | 29.09.2022 | Classification | IPC: | H01L25/065, H01L25/03, H01L23/66, H01L23/367, H01Q1/22, H01L23/373, H01L23/31 | [2023/42] | CPC: |
H01L25/0657 (EP,KR);
H01L23/3675 (US);
H01L23/3121 (EP,KR);
H01L23/3128 (EP,KR);
H01L23/3672 (US);
H01L23/3677 (EP,KR);
H01L23/3736 (EP,KR);
H01L23/3738 (EP,KR);
H01L23/49816 (US);
H01L23/49822 (US);
H01L23/66 (EP,KR,US);
H01L24/16 (US);
H01L24/32 (US);
H01L25/0652 (EP,KR);
H01L25/0655 (US);
H01Q1/2283 (EP,KR);
H01Q21/065 (EP,KR);
H01L2223/6616 (US);
H01L2223/6644 (EP,KR);
H01L2223/6677 (EP,KR,US);
H01L2224/16146 (US);
H01L2224/16225 (US);
H01L2224/32146 (US);
H01L2224/32225 (US);
H01L2225/06513 (EP,KR);
H01L2225/06517 (EP,KR);
H01L2225/06527 (EP,KR);
H01L2225/06541 (EP,KR);
H01L2225/06568 (EP,KR);
H01L2225/06589 (EP,KR);
H01L25/03 (EP);
H01L2924/01031 (US);
H01L2924/13051 (US);
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2023/42] | Title | German: | 3D-VERPACKUNG MIT SILICIUMCHIP ALS KÜHLKÖRPER FÜR CHIPS MIT HOHER LEISTUNG UND NIEDRIGER WÄRMELEITFÄHIGKEIT | [2023/42] | English: | 3D PACKAGING WITH SILICON DIE AS THERMAL SINK FOR HIGH-POWER LOW THERMAL CONDUCTIVITY DIES | [2023/42] | French: | ENCAPSULATION 3D AVEC PUCE EN SILICIUM EN TANT QUE DISSIPATEUR THERMIQUE DE PUCES HAUTE PUISSANCE À FAIBLE CONDUCTIVITÉ THERMIQUE | [2023/42] | Entry into regional phase | 01.06.2023 | National basic fee paid | 01.06.2023 | Designation fee(s) paid | 01.06.2023 | Examination fee paid | Examination procedure | 01.06.2023 | Examination requested [2023/42] | 01.06.2023 | Date on which the examining division has become responsible | 12.01.2024 | Amendment by applicant (claims and/or description) | Fees paid | Renewal fee | 19.12.2023 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [I]US2011186990 (MAWATARI KAZUAKI [JP], et al) [I] 1-7,10,11,19,22 * paragraphs [0010] , [ 0020] , [ 0022] , [ 0026] , [ 0029]; figures 2,3,4 *; | [Y]US2018061726 (ANDERSON KEVIN J [US], et al) [Y] 16-18* paragraph [0036]; figure 2 *; | [XYI]US2019067157 (LIN TSUNG-SHU [TW], et al) [X] 1,3-7,11,19,22 * paragraph [0019] - paragraph [0056]; figures 8B,12,14 * [Y] 12-18 [I] 8,9; | [Y]US2019088634 (TSUKIYAMA SATOSHI [JP], et al) [Y] 12-18 * figure 2 * |