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Extract from the Register of European Patents

EP About this file: EP4219059

EP4219059 - BONDING STRUCTURE AND SEMICONDUCTOR DEVICE HAVING SAID BONDING STRUCTURE [Right-click to bookmark this link]
StatusRequest for examination was made
Status updated on  30.06.2023
Database last updated on 01.01.2025
FormerThe international publication has been made
Status updated on  07.05.2022
Most recent event   Tooltip26.10.2024New entry: Renewal fee paid 
Applicant(s)For all designated states
Tanaka Kikinzoku Kogyo K.K.
7-3, Marunouchi 2-chome Chiyoda-ku
Tokyo 100-6422 / JP
[2023/31]
Inventor(s)01 / KISHIMOTO, Takaomi
Tomioka-shi, Gunma 370-2452 / JP
02 / TAKEUCHI, Junichi
Oshu-shi, Iwate 023-1101 / JP
03 / TORINOUMI, Hiraku
Oshu-shi, Iwate 023-1101 / JP
 [2023/31]
Representative(s)Hoffmann Eitle
Patent- und Rechtsanwälte PartmbB
Arabellastraße 30
81925 München / DE
[2023/31]
Application number, filing date21886106.025.10.2021
[2023/31]
WO2021JP39202
Priority number, dateJP2020018156829.10.2020         Original published format: JP 2020181568
[2023/31]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2022091988
Date:05.05.2022
Language:JA
[2022/18]
Type: A1 Application with search report 
No.:EP4219059
Date:02.08.2023
Language:EN
[2023/31]
Search report(s)International search report - published on:JP05.05.2022
(Supplementary) European search report - dispatched on:EP22.09.2023
ClassificationIPC:B23K35/30, B23K35/02, B23K20/00, C22C5/06, B22F3/24, // H01L23/00
[2023/43]
CPC:
B23K35/3006 (EP,KR); H01L24/32 (EP,KR,US); H01L24/29 (US);
B22F1/052 (EP); B22F1/09 (EP); B22F3/24 (EP);
B22F7/008 (EP); B22F7/064 (EP); B23K20/02 (EP);
B23K35/0244 (EP); C22C5/06 (EP); B23K2101/40 (EP);
B23K2103/56 (EP); H01L2224/29111 (US); H01L2224/29139 (US);
H01L2224/29564 (US); H01L2224/32151 (EP,KR); H01L2224/32245 (US);
H01L2224/32501 (EP,KR); H01L2924/01047 (EP,KR); H01L2924/0105 (EP,KR);
H01L2924/01327 (US) (-)
Former IPC [2023/31]B23K20/00, C22C5/06, H01L21/52, B22F3/24
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2023/31]
TitleGerman:VERBINDUNGSSTRUKTUR UND HALBLEITERBAUELEMENT MIT DIESER VERBINDUNGSSTRUKTUR[2023/31]
English:BONDING STRUCTURE AND SEMICONDUCTOR DEVICE HAVING SAID BONDING STRUCTURE[2023/31]
French:STRUCTURE DE LIAISON, ET DISPOSITIF À SEMI-CONDUCTEUR COMPORTANT LADITE STRUCTURE DE LIAISON[2023/31]
Entry into regional phase26.04.2023Translation filed 
26.04.2023National basic fee paid 
26.04.2023Search fee paid 
26.04.2023Designation fee(s) paid 
26.04.2023Examination fee paid 
Examination procedure26.04.2023Examination requested  [2023/31]
11.04.2024Amendment by applicant (claims and/or description)
11.04.2024Date on which the examining division has become responsible
Fees paidRenewal fee
24.10.2023Renewal fee patent year 03
25.10.2024Renewal fee patent year 04
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Documents cited:Search[A]US2006061974  (SOGA TASAO [JP], et al) [A] 1-5 * the whole document *;
 [XI]JP2006289474  (HITACHI METALS LTD) [X] 1-4 * abstract * [I] 5;
 [A]JP2014193474  (MITSUBISHI MATERIALS CORP) [A] 1-5* the whole document *
International search[YX]JP2006289474  (HITACHI METALS LTD) [Y] 2, 5 [X] 1, 3, 4;
 [Y]JP2009060101  (HITACHI LTD) [Y] 2, 5* paragraphs [0025]-[0027], [0038], [0039], [0054] *
by applicantJP2018098265
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