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EP4177955
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EP About this file: EP4177955
| EP4177955 - SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 07.04.2023 Database last updated on 10.07.2024 | |
| Former | The international publication has been made Status updated on 01.04.2023 | ||
| Former | unknown Status updated on 17.01.2023 | Most recent event Tooltip | 09.07.2024 | The date on which the examining division becomes responsible, has been established | 09.07.2024 | Amendment by applicant | Applicant(s) | For all designated states Changxin Memory Technologies, Inc. No. 388 Xingye Avenue Airport Industrial Park Economic and Technological Development Area Hefei, Anhui 230601 / CN | [2023/19] | Inventor(s) | 01 /
LU, Jingwen Hefei Anhui 230601 / CN | [2024/23] | Representative(s) | Lavoix Bayerstraße 83 80335 München / DE | [2023/19] | Application number, filing date | 21949522.3 | 19.11.2021 | [2023/19] | WO2021CN131910 | Priority number, date | CN202111138596 | 27.09.2021 Original published format: CN202111138596 | [2023/19] | Filing language | ZH | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2023045057 | Date: | 30.03.2023 | Language: | ZH | [2023/13] | Type: | A1 Application with search report | No.: | EP4177955 | Date: | 10.05.2023 | Language: | EN | [2023/19] | Search report(s) | International search report - published on: | CN | 30.03.2023 | (Supplementary) European search report - dispatched on: | EP | 20.12.2023 | Classification | IPC: | H01L29/423, H01L21/8234, H01L27/088, H10B12/00, H01L21/762 | [2024/03] | CPC: |
H10B12/053 (EP);
H01L29/4236 (EP,US);
H01L21/76224 (EP);
H01L29/42368 (EP);
H10B12/02 (US);
H10B12/485 (EP);
H10B12/488 (EP,US)
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| Former IPC [2023/19] | H01L29/423, H01L21/8234, H01L27/088 | Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2023/19] | Extension states | BA | Not yet paid | ME | Not yet paid | Validation states | KH | Not yet paid | MA | Not yet paid | MD | Not yet paid | TN | Not yet paid | Title | German: | HALBLEITERSTRUKTUR UND HERSTELLUNGSVERFAHREN DAFÜR | [2023/19] | English: | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR | [2023/19] | French: | STRUCTURE SEMI-CONDUCTRICE ET SON PROCÉDÉ DE FABRICATION | [2023/19] | Entry into regional phase | 17.01.2023 | Translation filed | 17.01.2023 | National basic fee paid | 17.01.2023 | Search fee paid | 17.01.2023 | Designation fee(s) paid | 17.01.2023 | Examination fee paid | Examination procedure | 17.01.2023 | Examination requested [2023/19] | 08.07.2024 | Amendment by applicant (claims and/or description) | 08.07.2024 | Date on which the examining division has become responsible | Fees paid | Renewal fee | 24.11.2023 | Renewal fee patent year 03 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]CN101572230 (SEMICONDUCTOR MFG INT BEIJING [CN]) [A] 5* abstract *; | [XAI]US2014361354 (TING YU-WEI [TW], et al) [X] 1-3,11-15 * paragraph [0011] - paragraph [0054]; figures 1-12 * [A] 5 [I] 4,6-10; | [X]US2018190661 (WANG YUNG-MING [TW], et al) [X] 1,11,14,15 * paragraph [0010] - paragraph [0013]; figures 1, 2 * |