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EP4124673
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EP About this file: EP4124673
| EP4124673 - METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 30.12.2022 Database last updated on 09.05.2025 | Most recent event Tooltip | 26.02.2024 | New entry: Renewal fee paid | Applicant(s) | For all designated states Kokusai Electric Corp. 3-4, Kandakaji-cho Chiyoda-ku Tokyo 1010045 / JP | [2023/05] | Inventor(s) | 01 /
DEGAI, Motomu Toyama, 9392393 / JP | 02 /
NAKATANI, Kimihiko Toyama, 9392393 / JP | 03 /
HASHIMOTO, Yoshitomo Toyama, 9392393 / JP | 04 /
WASEDA, Takayuki Toyama, 9392393 / JP | [2023/05] | Representative(s) | Bardehle Pagenberg Partnerschaft mbB Patentanwälte Rechtsanwälte Prinzregentenplatz 7 81675 München / DE | [2023/05] | Application number, filing date | 22175384.1 | 25.05.2022 | [2023/05] | Priority number, date | JP20210122751 | 27.07.2021 Original published format: JP 2021122751 | [2023/05] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP4124673 | Date: | 01.02.2023 | Language: | EN | [2023/05] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 18.11.2022 | Classification | IPC: | C23C16/02, C23C16/04, C23C16/40, C23C16/455, H01L21/02, B05D1/00 | [2023/05] | CPC: |
C23C16/04 (EP,KR);
H01L21/32 (EP,KR);
H01L21/02359 (US);
C23C16/0236 (EP,KR,US);
C23C16/401 (EP);
C23C16/45534 (EP,KR);
C23C16/52 (KR,US);
H01L21/02126 (EP);
H01L21/02211 (EP);
H01L21/0228 (EP,KR);
H01L21/02312 (KR);
B05D1/32 (EP);
B05D2203/30 (EP)
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| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2023/36] |
| Former [2023/05] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Extension states | BA | Not yet paid | ME | Not yet paid | Validation states | KH | Not yet paid | MA | Not yet paid | MD | Not yet paid | TN | Not yet paid | Title | German: | VERFAHREN ZUR VERARBEITUNG EINES SUBSTRATS, VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS, SUBSTRATVERARBEITUNGSGERÄT UND PROGRAMM | [2023/05] | English: | METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM | [2023/05] | French: | PROCÉDÉ DE TRAITEMENT DE SUBSTRAT, PROCÉDÉ DE FABRICATION DE DISPOSITIF SEMI-CONDUCTEUR, APPAREIL DE TRAITEMENT DE SUBSTRAT ET PROGRAMME | [2023/05] | Examination procedure | 25.05.2022 | Examination requested [2023/05] | 01.08.2023 | Amendment by applicant (claims and/or description) | 01.08.2023 | Date on which the examining division has become responsible | Fees paid | Renewal fee | 26.02.2024 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US2012202357 (SATO TATSUYA E [US], et al); | [A]US2017256402 (KAUFMAN-OSBORN TOBIN [US], et al); | [E]EP4080548 (KOKUSAI ELECTRIC CORP [JP]) |