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EP4138143
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Extract from the Register of European Patents
EP About this file: EP4138143
| EP4138143 - LEAKAGE INSENSITIVE TRANSISTOR CIRCUITS [Right-click to bookmark this link] | Status | Examination is in progress Status updated on 30.01.2026 Database last updated on 09.04.2026 | |
| Former | Request for examination was made Status updated on 25.08.2023 | ||
| Former | The application has been published Status updated on 20.01.2023 | Most recent event Tooltip | 30.01.2026 | New entry: Despatch of examination report + time limit | 30.01.2026 | First examination report | Applicant(s) | For all designated states INTEL Corporation 2200 Mission College Blvd. Santa Clara, CA 95054 / US | [2023/08] | Inventor(s) | 01 /
Nikonov, Dmitri Evgenievich Beaverton, 97007 / US | 02 /
Li, Hai Portland, 97229 / US | 03 /
Young, Ian Alexander Olympia, 98512 / US | [2023/08] | Representative(s) | Goddar, Heinz J. Boehmert & Boehmert Anwaltspartnerschaft mbB Pettenkoferstrasse 22 80336 München / DE | [2023/08] | Application number, filing date | 22182767.8 | 04.07.2022 | [2023/08] | Priority number, date | US202117405953 | 18.08.2021 Original published format: US202117405953 | [2023/08] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP4138143 | Date: | 22.02.2023 | Language: | EN | [2023/08] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 22.12.2022 | Classification | IPC: | H01L29/10, H01L29/423, H01L29/78 | [2023/08] | CPC: |
H10D30/611 (EP);
H10D30/615 (US);
H03K19/0013 (US);
H10D30/6215 (US);
H10D62/378 (EP,US);
H10D64/529 (EP)
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2023/39] |
| Former [2023/08] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Extension states | BA | Not yet paid | ME | Not yet paid | Validation states | KH | Not yet paid | MA | Not yet paid | MD | Not yet paid | TN | Not yet paid | Title | German: | LECKUNEMPFINDLICHE TRANSISTORSCHALTUNGEN | [2023/08] | English: | LEAKAGE INSENSITIVE TRANSISTOR CIRCUITS | [2023/08] | French: | CIRCUITS DE TRANSISTORS INSENSIBLES AUX FUITES | [2023/08] | Examination procedure | 22.08.2023 | Amendment by applicant (claims and/or description) | 22.08.2023 | Examination requested [2023/39] | 22.08.2023 | Date on which the examining division has become responsible | 29.01.2026 | Despatch of a communication from the examining division (Time limit: M04) | Fees paid | Renewal fee | 26.06.2024 | Renewal fee patent year 03 | 27.06.2025 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XI] WO2020199707 (HANGZHOU SILAN MICROELECT CO et al.) [X] 1 * figures 1-9 *[I] 2-15 | [XI] US2022199794 (ZHANG SHAOHUA et al.) * paragraphs [0074] - [0111]; figures 1-9 *[I] 2-15 |