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EP4152410
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Extract from the Register of European Patents
EP About this file: EP4152410
| EP4152410 - GATE DIELECTRIC FOR THIN FILM OXIDE TRANSISTORS [Right-click to bookmark this link] | Status | Examination is in progress Status updated on 23.01.2025 Database last updated on 14.03.2026 | |
| Former | Request for examination was made Status updated on 22.09.2023 | ||
| Former | The application has been published Status updated on 17.02.2023 | Most recent event Tooltip | 27.06.2025 | New entry: Renewal fee paid | Applicant(s) | For all designated states INTEL Corporation 2200 Mission College Blvd. Santa Clara, CA 95054 / US | [2023/12] | Inventor(s) | 01 /
Connor, Christopher Hillsboro, 97124 / US | 02 /
O`Donnell, James Forest Grove, 97116 / US | 03 /
Madisetti, Shailesh Kumar Hillsboro, 97124 / US | [2023/12] | Representative(s) | Goddar, Heinz J. Boehmert & Boehmert Anwaltspartnerschaft mbB Pettenkoferstrasse 22 80336 München / DE | [2023/12] | Application number, filing date | 22184022.6 | 11.07.2022 | [2023/12] | Priority number, date | US202117476165 | 15.09.2021 Original published format: US202117476165 | [2023/12] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP4152410 | Date: | 22.03.2023 | Language: | EN | [2023/12] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 21.12.2022 | Classification | IPC: | H01L29/786, H01L29/51 | [2023/12] | CPC: |
H10D30/6756 (EP);
H10D30/6755 (US);
H10D30/6757 (US);
H10D64/691 (EP);
H10D99/00 (US);
H10D30/0278 (US);
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2023/43] |
| Former [2023/12] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Extension states | BA | Not yet paid | ME | Not yet paid | Validation states | KH | Not yet paid | MA | Not yet paid | MD | Not yet paid | TN | Not yet paid | Title | German: | GATE-DIELEKTRIKUM FÜR DÜNNFILMOXIDTRANSISTOREN | [2023/12] | English: | GATE DIELECTRIC FOR THIN FILM OXIDE TRANSISTORS | [2023/12] | French: | DIÉLECTRIQUE DE GRILLE POUR TRANSISTORS À OXYDE À COUCHE MINCE | [2023/12] | Examination procedure | 19.09.2023 | Amendment by applicant (claims and/or description) | 19.09.2023 | Examination requested [2023/43] | 19.09.2023 | Date on which the examining division has become responsible | 22.01.2025 | Despatch of a communication from the examining division (Time limit: M04) | 20.05.2025 | Reply to a communication from the examining division | Fees paid | Renewal fee | 26.06.2024 | Renewal fee patent year 03 | 27.06.2025 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XYI] CN113299759 (TAIWAN SEMICONDUCTOR MFG CO LTD et al.) [X] 1-4,11 * figures 1-4, 6, 7 *[Y] 12-15 [I] 5-10 | [Y] US2016204129 (HOENTSCHEL JAN et al.) [Y] 12-15 * figure 2f * * paragraph [0032] - paragraph [0034] * | [XAI] CN113380899 (TAIWAN SEMICONDUCTOR MFG CO LTD et al.) [X] 1-4,6,11 * figures 1-6 *[A] 12-15 [I] 5,7-10 | [XAI] US2020098926 (SHARMA ABHISHEK A et al.) [X] 1,2,6-8 * figures 4,5 * * paragraph [0032] *[A] 12-15 [I] 3-5,9-11 |