EP4142458 - METHOD FOR PRODUCING A SUPERCONDUCTING VANADIUM SILICIDE ON A SILICON LAYER [Right-click to bookmark this link] | Status | The patent has been granted Status updated on 23.02.2024 Database last updated on 18.10.2024 | |
Former | Grant of patent is intended Status updated on 21.11.2023 | ||
Former | Request for examination was made Status updated on 27.01.2023 | Most recent event Tooltip | 27.09.2024 | Change - applicant | published on 30.10.2024 [2024/44] | Applicant(s) | For all designated states Commissariat à l'Energie Atomique et aux Energies Alternatives 25 Rue Leblanc Bat Le Ponant 75015 Paris / FR | For all designated states Université Grenoble Alpes 621 avenue Centrale 38400 Saint-Martin-d'Hères / FR | [2024/44] |
Former [2023/51] | For all designated states Commissariat à l'Energie Atomique et aux Energies Alternatives Bâtiment "Le Ponant D" 25, rue Leblanc 75015 Paris / FR | ||
For all designated states Université Grenoble Alpes 621 avenue Centrale 38400 Saint-Martin-d'Hères / FR | |||
Former [2023/09] | For all designated states Commissariat à l'énergie atomique et aux énergies alternatives Bâtiment "Le Ponant D" 25 rue Leblanc 75015 Paris / FR | ||
For all designated states Université Grenoble Alpes 621 avenue Centrale 38400 Saint-Martin-d'Hères / FR | Inventor(s) | 01 /
NEMOUCHI, Fabrice 38054 Grenoble Cedex 09 / FR | 02 /
FARJOT, Thierry 38054 Grenoble Cedex 09 / FR | 03 /
GUSTAVO, Frédéric 38054 Grenoble Cedex 09 / FR | 04 /
LEFLOCH, François 38054 Grenoble Cedex 09 / FR | 05 /
VETHAAK, Tom 38000 Grenoble / FR | [2023/51] |
Former [2023/09] | 01 /
NEMOUCHI, Fabrice 38054 GRENOBLE CEDEX 09 / FR | ||
02 /
FARJOT, Thierry 38054 GRENOBLE CEDEX 09 / FR | |||
03 /
GUSTAVO, Frédéric 38054 GRENOBLE CEDEX 09 / FR | |||
04 /
LEFLOCH, François 38054 GRENOBLE CEDEX 09 / FR | |||
05 /
VETHAAK, Tom 38000 GRENOBLE / FR | Representative(s) | INNOV-GROUP 209 Avenue Berthelot 69007 Lyon / FR | [N/P] |
Former [2023/09] | INNOV-GROUP 310, avenue Berthelot 69372 Lyon Cedex 08 / FR | Application number, filing date | 22191909.5 | 24.08.2022 | [2023/09] | Priority number, date | FR20210009112 | 31.08.2021 Original published format: FR 2109112 | [2023/09] | Filing language | FR | Procedural language | FR | Publication | Type: | A1 Application with search report | No.: | EP4142458 | Date: | 01.03.2023 | Language: | FR | [2023/09] | Type: | B1 Patent specification | No.: | EP4142458 | Date: | 27.03.2024 | Language: | FR | [2024/13] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 27.01.2023 | Classification | IPC: | H10N60/01, // H10N60/10 | [2023/09] | CPC: |
H10N60/0912 (EP);
H01L21/28518 (US);
H01L29/401 (US);
H10N60/128 (EP)
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2023/09] | Title | German: | VERFAHREN ZUR HERSTELLUNG EINES SUPRALEITENDEN VANADIUMSILIZIDS AUF EINER SILIZIUMSCHICHT | [2023/09] | English: | METHOD FOR PRODUCING A SUPERCONDUCTING VANADIUM SILICIDE ON A SILICON LAYER | [2023/09] | French: | PROCÉDÉ DE RÉALISATION D'UN SILICIURE DE VANADIUM SUPRACONDUCTEUR SUR UNE COUCHE DE SILICIUM | [2023/09] | Examination procedure | 24.08.2022 | Examination requested [2023/09] | 21.06.2023 | Date on which the examining division has become responsible | 22.11.2023 | Communication of intention to grant the patent | 19.02.2024 | Fee for grant paid | 19.02.2024 | Fee for publishing/printing paid | 19.02.2024 | Receipt of the translation of the claim(s) |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | HR | 27.03.2024 | NO | 27.06.2024 | RS | 27.06.2024 | GR | 28.06.2024 | [2024/35] |
Former [2024/33] | NO | 27.06.2024 | Documents cited: | Search | [A]JPS57153481 (UNIV TOHOKU); | [A]US4495510 (ROTH JOHN A [US], et al); | [A]FR3088483 (COMMISSARIAT ENERGIE ATOMIQUE [FR]); | [AD]US2020287119 (BLACK CHARLES T [US], et al); | by applicant | US2020287119 |