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EP4331016
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EP About this file: EP4331016
| EP4331016 - SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE PROVIDING METAL WORK FUNCTION TUNING AND ASSOCIATED METHODS [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 02.02.2024 Database last updated on 10.07.2024 | |
| Former | The international publication has been made Status updated on 26.11.2022 | ||
| Former | unknown Status updated on 21.06.2022 | Most recent event Tooltip | 08.06.2024 | Amendment by applicant | Applicant(s) | For all designated states Atomera Incorporated 750 University Avenue, Suite 280 Los Gatos, CA 95032 / US | [2024/10] | Inventor(s) | 01 /
MEARS, Robert, J. Wellesley, MA 02482 / US | 02 /
TAKEUCHI, Hideki San Jose, CA 95129 / US | [2024/10] | Representative(s) | Page White Farrer Bedford House 21a John Street London WC1N 2BF / GB | [2024/10] | Application number, filing date | 22729931.0 | 18.05.2022 | [2024/10] | WO2022US29752 | Priority number, date | US202163189909P | 18.05.2021 Original published format: US 202163189909 P | US202163211174P | 16.06.2021 Original published format: US 202163211174 P | US202163212292P | 18.06.2021 Original published format: US 202163212292 P | [2024/10] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2022245889 | Date: | 24.11.2022 | Language: | EN | [2022/47] | Type: | A1 Application with search report | No.: | EP4331016 | Date: | 06.03.2024 | Language: | EN | The application published by WIPO in one of the EPO official languages on 24.11.2022 takes the place of the publication of the European patent application. | [2024/10] | Search report(s) | International search report - published on: | EP | 24.11.2022 | Classification | IPC: | H01L29/08, H01L29/15, H01L21/336, H01L29/775, H01L29/423, H01L21/02, B82Y10/00, H01L29/165 | [2024/10] | CPC: |
H01L29/152 (EP);
H01L29/0665 (US);
H01L21/823412 (US);
H01L21/823418 (US);
H01L29/0847 (EP);
H01L29/1054 (US);
H01L29/15 (US);
H01L29/157 (US);
H01L29/42392 (EP,US);
H01L29/66439 (EP);
H01L29/66742 (US);
H01L29/775 (EP);
H01L29/7842 (US);
H01L29/78618 (US);
H01L29/78696 (EP,US);
B82Y10/00 (EP);
H01L21/0245 (EP);
H01L21/02488 (EP);
H01L21/02499 (EP);
H01L21/02507 (EP);
H01L21/02532 (EP);
H01L29/165 (EP)
(-)
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2024/10] | Extension states | BA | Not yet paid | ME | Not yet paid | Validation states | KH | Not yet paid | MA | Not yet paid | MD | Not yet paid | TN | Not yet paid | Title | German: | HALBLEITERBAUELEMENT MIT EINEM ÜBERGITTER ZUR BEREITSTELLUNG VON METALLARBEITSFUNKTIONSABSTIMMUNG UND ZUGEHÖRIGE VERFAHREN | [2024/10] | English: | SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE PROVIDING METAL WORK FUNCTION TUNING AND ASSOCIATED METHODS | [2024/10] | French: | DISPOSITIF À SEMI-CONDUCTEUR COMPRENANT UN SUPER-RÉSEAU FOURNISSANT UN ACCORD DE FONCTION DE TRAVAIL MÉTALLIQUE ET PROCÉDÉS ASSOCIÉS | [2024/10] | Entry into regional phase | 27.11.2023 | National basic fee paid | 27.11.2023 | Designation fee(s) paid | 27.11.2023 | Examination fee paid | Examination procedure | 17.03.2023 | Request for preliminary examination filed International Preliminary Examining Authority: EP | 27.11.2023 | Examination requested [2024/10] | 27.11.2023 | Date on which the examining division has become responsible | 07.06.2024 | Amendment by applicant (claims and/or description) | Fees paid | Renewal fee | 14.05.2024 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [A]US2006292765 (BLANCHARD RICHARD A [US], et al) [A] 1-23* the whole document *; | [Y]US2019279897 (STEPHENSON ROBERT JOHN [GB], et al) [Y] 1-23 * paragraph [0031] - paragraph [0048] * * paragraph [0055] - paragraph [0060] * * figures 1-3,5-8; claims 1,8 *; | [A]US10593761 (TAKEUCHI HIDEKI [US], et al) [A] 1-23 * column 13, line 62 - column 14, line 27 * * figure 10 *; | [Y]EP3648172 (MEDIATEK INC [TW]) [Y] 1-23 * paragraph [0045] * * paragraph [0060] - paragraph [0067] * * paragraph [0077] - paragraph [0082] * * figures 6,11A-12B * | by applicant | US4937204 | US5216262 | US5357119 | US5683934 | GB2347520 | US6376337 | US6472685 | US2003034529 | US2003057416 | US7105895 | US9899479 | US9941359 | US10109479 | US2021126018 | US2022005926 | - TSU, "Phenomena in silicon nanostructure devices", Applied Physics and Materials Science & Processing, (20000906), pages 391 - 402, XP002314003 | - LUO et al., "Chemical Design of Direct-Gap Light-Emitting Silicon", Physical Review Letters, (20020812), vol. 89, no. 7, doi:10.1103/PhysRevLett.89.076802, XP002314002 DOI: http://dx.doi.org/10.1103/PhysRevLett.89.076802 |