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Extract from the Register of European Patents

EP About this file: EP4397642

EP4397642 - HIGHLY THERMALLY CONDUCTIVE SILICON NITRIDE SINTERED COMPACT, SILICON NITRIDE SUBSTRATE, SILICON NITRIDE CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE [Right-click to bookmark this link]
StatusRequest for examination was made
Status updated on  07.06.2024
Database last updated on 28.03.2026
FormerThe international publication has been made
Status updated on  11.03.2023
Most recent event   Tooltip27.02.2026Change - applicantpublished on 01.04.2026 [2026/14]
Applicant(s)For all designated states
Niterra Materials Co., Ltd.
8, Shinsugita-cho, Isogo-ku
Yokohama-shi
Kanagawa / JP
[2026/14]
Former [2024/28]For all designated states
Kabushiki Kaisha Toshiba
1-1, Shibaura 1-Chome
Minato-Ku
Tokyo 105-0023 / JP
For all designated states
Toshiba Materials Co., Ltd.
8, Shinsugita-Cho
Isogo-Ku
Yokohama-Shi
Kanagawa 235-0032 / JP
Inventor(s)01 / AOKI, Katsuyuki
Yokohama-shi, Kanagawa 235-0032 / JP
02 / GOTO, Yasuhiro
Tokyo 105-0023 / JP
03 / IWAI, Kentaro
Yokohama-shi, Kanagawa 235-0032 / JP
04 / FUKASAWA, Takayuki
Yokohama-shi, Kanagawa 235-0032 / JP
05 / YAMAGATA, Yoshihito
Yokohama-shi, Kanagawa 235-0032 / JP
 [2024/28]
Representative(s)Henkel & Partner mbB
Patentanwaltskanzlei, Rechtsanwaltskanzlei
Maximiliansplatz 21
80333 München / DE
[2024/28]
Application number, filing date22864564.430.08.2022
[2024/28]
WO2022JP32594
Priority number, dateJP2021014363003.09.2021         Original published format: JP 2021143630
[2024/28]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2023032982
Date:09.03.2023
Language:JA
[2023/10]
Type: A1 Application with search report 
No.:EP4397642
Date:10.07.2024
Language:EN
[2024/28]
Search report(s)International search report - published on:JP09.03.2023
(Supplementary) European search report - dispatched on:EP07.10.2025
ClassificationIPC:C04B35/587, H05K1/03, C04B35/64, C09K5/14, H01L23/373
[2025/45]
CPC:
C09K5/14 (EP,US); C04B35/587 (EP,US); C04B35/6261 (EP);
C04B35/6264 (EP); C04B35/6265 (EP); C04B35/64 (EP);
H05K1/03 (EP); H10W40/255 (EP,US); H10W40/259 (EP);
C04B2235/3206 (EP); C04B2235/3224 (EP); C04B2235/3225 (EP);
C04B2235/3229 (EP); C04B2235/3232 (EP); C04B2235/3244 (EP);
C04B2235/3873 (US); C04B2235/3878 (EP); C04B2235/3882 (EP);
C04B2235/3895 (EP); C04B2235/5436 (EP); C04B2235/5445 (EP);
C04B2235/6567 (EP); C04B2235/658 (EP); C04B2235/6581 (EP);
C04B2235/661 (EP); C04B2235/664 (EP); C04B2235/723 (EP,US);
C04B2235/783 (EP); C04B2235/786 (EP,US); C04B2235/788 (EP);
C04B2235/85 (EP,US); C04B2235/96 (EP); C04B2235/9607 (EP,US) (-)
Former IPC [2024/28]C04B35/587, H05K1/03
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2024/28]
TitleGerman:SILICIUMNITRIDSINTERKÖRPER HOHER WÄRMELEITFÄHIGKEIT, SILICIUMNITRIDSUBSTRAT, SILICIUMNITRIDLEITERPLATTE UND HALBLEITERBAUELEMENT[2024/28]
English:HIGHLY THERMALLY CONDUCTIVE SILICON NITRIDE SINTERED COMPACT, SILICON NITRIDE SUBSTRATE, SILICON NITRIDE CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE[2024/28]
French:COMPRIMÉ FRITTÉ DE NITRURE DE SILICIUM HAUTEMENT THERMOCONDUCTEUR, SUBSTRAT EN NITRURE DE SILICIUM, CARTE DE CIRCUIT IMPRIMÉ AU NITRURE DE SILICIUM ET DISPOSITIF À SEMI-CONDUCTEUR[2024/28]
Entry into regional phase30.12.2023Translation filed 
30.12.2023National basic fee paid 
30.12.2023Search fee paid 
30.12.2023Designation fee(s) paid 
30.12.2023Examination fee paid 
Examination procedure30.12.2023Amendment by applicant (claims and/or description)
30.12.2023Examination requested  [2024/28]
Fees paidRenewal fee
31.03.2024Renewal fee patent year 03
03.07.2025Renewal fee patent year 04
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Documents cited:Search[X] JP2002293642  (HITACHI METALS LTD et al.) [X] 1-12 * paragraphs [0014] , [0018] , [0045] - [0047]; example 1A; claims 1-4; tables 1,2 *
 [A] JP2002265276  (HITACHI METALS LTD et al.) [A] 1-12 * paragraph [0049]; claims 1-4 *
International search[AX] JP2002293642  (HITACHI METALS LTD et al.) [A] 3-7, 13-18 * entire text, all drawings *[X] 1, 2, 8-12
 [AX] JP2002265276  (HITACHI METALS LTD et al.) [A] 3-7, 13-18 * entire text, all drawings *[X] 1, 2, 8-12
 [A] WO2017014169  (SUMITOMO ELECTRIC INDUSTRIES et al.) [A] 1-18 * claims 1, 5, paragraph [0034] *
 [A] WO2016117553  (TOSHIBA KK et al.) [A] 1-18 * claim 1 *
 [A] JP2004262756  (HITACHI METALS LTD et al.) [A] 1-18 * claims 1-5 *
 [A] JP2018024548  (SUMITOMO ELECTRIC INDUSTRIES et al.) [A] 1-18 * claim 1 *
by applicantJP6293772
 JP2018024548
 JP2022071426
 JP2020180386
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.