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EP4199085
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EP About this file: EP4199085
| EP4199085 - SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREFOR [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 19.05.2023 Database last updated on 10.07.2024 | |
| Former | The international publication has been made Status updated on 05.05.2023 | ||
| Former | unknown Status updated on 15.03.2023 | Most recent event Tooltip | 05.04.2024 | Supplementary search report | published on 01.05.2024 [2024/18] | Applicant(s) | For all designated states Changxin Memory Technologies, Inc. No. 388, Xingye Avenue Airport Industrial Park Economic and Technological Development Area Hefei, Anhui 230601 / CN | [2023/25] | Inventor(s) | 01 /
GUO, Shuai Hefei, Anhui 230601 / CN | [2023/25] | Representative(s) | Lavoix Bayerstraße 83 80335 München / DE | [2023/25] | Application number, filing date | 22865907.4 | 06.01.2022 | [2023/25] | WO2022CN70590 | Priority number, date | CN202111231509 | 22.10.2021 Original published format: CN202111231509 | [2023/25] | Filing language | ZH | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2023065542 | Date: | 27.04.2023 | Language: | ZH | [2023/17] | Type: | A1 Application with search report | No.: | EP4199085 | Date: | 21.06.2023 | Language: | EN | [2023/25] | Search report(s) | International search report - published on: | CN | 27.04.2023 | (Supplementary) European search report - dispatched on: | EP | 04.04.2024 | Classification | IPC: | H01L29/786, H10B12/00, H01L27/12, H01L29/43 | [2024/18] | CPC: |
H10B12/05 (EP,KR,US);
H10B12/30 (US);
H01L29/43 (EP);
H01L29/7827 (US);
H01L29/78642 (EP,KR);
H10B12/315 (EP,KR);
|
| Former IPC [2023/25] | H01L27/10, H01L21/82, H01L29/43 | Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2023/25] | Extension states | BA | Not yet paid | ME | Not yet paid | Validation states | KH | Not yet paid | MA | Not yet paid | MD | Not yet paid | TN | Not yet paid | Title | German: | HALBLEITERSTRUKTUR UND HERSTELLUNGSVERFAHREN DAFÜR | [2023/25] | English: | SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREFOR | [2023/25] | French: | STRUCTURE SEMI-CONDUCTRICE ET SON PROCÉDÉ DE FABRICATION | [2023/25] | Entry into regional phase | 15.03.2023 | Translation filed | 15.03.2023 | National basic fee paid | 15.03.2023 | Search fee paid | 15.03.2023 | Designation fee(s) paid | 15.03.2023 | Examination fee paid | Examination procedure | 15.03.2023 | Amendment by applicant (claims and/or description) | 15.03.2023 | Examination requested [2023/25] | Fees paid | Renewal fee | 25.01.2024 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XAI]US2018197862 (SILLS SCOTT E [US], et al); | [X]US2019305085 (SUNG SEUNG HOON [US], et al); | [X]US2021050443 (KARDA KAMAL M [US], et al); | [A]US2021082921 (WADA MASAHARU [JP], et al) | International search | [A]US2006040440 (CHEN SHIH-CHANG [TW], et al) [A] 1-15* entire document *; | [A]CN105280698 (TAIWAN SEMICONDUCTOR MFG) [A] 1-15 * entire document *; | [A]CN106328654 (SHANGHAI FUDAN MICROELECTRONIC GROUP CO LTD) [A] 1-15 * entire document *; | [A]CN113380898 (TAIWAN SEMICONDUCTOR MFG CO LTD) [A] 1-15 * description, paragraphs [0053]-[0087], and figures 1-36 * |