Extract from the Register of European Patents

EP About this file: EP4415028

EP4415028 - FILM FORMING APPARATUS AND METHOD FOR FORMING CRYSTALLINE SEMICONDUCTOR FILM USING SAME [Right-click to bookmark this link]
StatusRequest for examination was made
Status updated on  12.07.2024
Database last updated on 28.03.2026
FormerThe international publication has been made
Status updated on  14.04.2023
Most recent event   Tooltip21.01.2026Supplementary search reportpublished on 18.02.2026  [2026/08]
Applicant(s)For all designated states
SHIN-ETSU CHEMICAL CO., LTD.
4-1, Marunouchi 1 chome
Chiyoda-ku
Tokyo 1000005 / JP
For all designated states
Shin-Etsu Engineering Co., Ltd.
9 Kanda-nishiki-cho 2-chome
Chiyoda-ku
Tokyo 101-0054 / JP
[N/P]
Former [2024/33]For all designated states
SHIN-ETSU CHEMICAL CO., LTD.
4-1, Marunouchi 1 chome
Chiyoda-ku
Tokyo 1000005 / JP
For all designated states
Shin-etsu Engineering Co., Ltd.
9 Kanda Nishikicho 2-chome
Chiyoda-ku
Tokyo 101-0054 / JP
Inventor(s)01 / HASHIGAMI, Hiroshi
Annaka-shi, Gunma 379-0195 / JP
02 / KOJIMA, Muneyuki
Annaka-shi, Gunma 379-0127 / JP
 [2024/33]
Representative(s)Mooser, Sebastian Thomas
Wuesthoff & Wuesthoff
Patentanwälte und Rechtsanwalt PartG mbB
Schweigerstraße 2
81541 München / DE
[2024/33]
Application number, filing date22878146.429.06.2022
[2024/33]
WO2022JP25860
Priority number, dateJP2021016561807.10.2021         Original published format: JP 2021165618
[2024/33]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2023058273
Date:13.04.2023
Language:JA
[2023/15]
Type: A1 Application with search report 
No.:EP4415028
Date:14.08.2024
Language:EN
[2024/33]
Search report(s)International search report - published on:JP13.04.2023
(Supplementary) European search report - dispatched on:EP20.01.2026
ClassificationIPC:H01L21/365, H01L21/368
[2024/33]
CPC:
H10P14/24 (EP,US); H10P14/60 (EP,KR); C23C16/40 (EP,US);
C23C16/4412 (EP,US); C23C16/4486 (EP,US); C23C16/45512 (US);
C23C16/4583 (EP,US); C23C16/46 (EP,US); H10P14/265 (EP);
H10P14/3411 (EP); H10P14/3434 (EP,US); H10P72/0402 (KR);
H10P72/0431 (KR); H10P72/7624 (KR) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2024/33]
TitleGerman:FILMBILDUNGSVORRICHTUNG UND VERFAHREN ZUR BILDUNG EINES KRISTALLINEN HALBLEITERFILMS DAMIT[2024/33]
English:FILM FORMING APPARATUS AND METHOD FOR FORMING CRYSTALLINE SEMICONDUCTOR FILM USING SAME[2024/33]
French:APPAREIL DE FORMATION DE FILM ET PROCÉDÉ DE FORMATION DE FILM SEMI-CONDUCTEUR CRISTALLIN FAISANT INTERVENIR CET APPAREIL[2024/33]
Entry into regional phase27.03.2024Translation filed 
27.03.2024National basic fee paid 
27.03.2024Search fee paid 
27.03.2024Designation fee(s) paid 
27.03.2024Examination fee paid 
Examination procedure27.03.2024Examination requested  [2024/33]
13.11.2024Amendment by applicant (claims and/or description)
Fees paidRenewal fee
27.03.2024Renewal fee patent year 03
20.05.2025Renewal fee patent year 04
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Documents cited:Search[XIY] JP6925548  (信越化学工業株式会社) [X] 1,7,9 * paragraphs [0049] , [0073] , [0 53] - [0063]; figure 1 *[I] 10 [Y] 2-6,8
 [Y] JP2004158554  (RORZE CORP et al.) [Y] 2,4-5 * paragraphs [0009] , [0010] , [0017] - [0019]; figure 3 *
 [Y] JP2021136445  (SHINETSU CHEMICAL CO et al.) [Y] 3 * paragraph [0048]; claim 1 *
 [Y] JPH07245265  (FUJITSU LTD et al.) [Y] 6 * paragraph [0028]; figure 2 *
 [Y] JP2020174153  (SHINETSU CHEMICAL CO et al.) [Y] 8 * paragraphs [0049] , [0050] *
International search[YX] JP6925548  (信越化学工業株式会社) [Y] 2-6, 8, 10 * paragraphs [0034]-[0059], fig. 1 *[X] 1, 7, 9
 [Y] JP2004158554  (RORZE CORP et al.) [Y] 2-5 * paragraphs [0009]-[0019], fig. 3 *
 [Y] JPH07245265  (FUJITSU LTD et al.) [Y] 6 * paragraphs [0013]-[0015], fig. 1 *
 [Y] JP2020174153  (SHINETSU CHEMICAL CO et al.) [Y] 8 * paragraph [0070] *
 [Y] JP2012119591  (FUJI ELECTRIC CO LTD et al.) [Y] 10 * paragraph [0168] *
by applicantJP2013028480
 JP2020107636
 JP2020188170
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