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Extract from the Register of European Patents

EP About this file: EP4254797

EP4254797 - DEVICE AND METHOD FOR INHIBITING A SUBSTRATE CURRENT IN AN IC SEMICONDUCTOR SUBSTRATE [Right-click to bookmark this link]
StatusRequest for examination was made
Status updated on  24.05.2024
Database last updated on 14.09.2024
FormerThe application has been published
Status updated on  01.09.2023
Most recent event   Tooltip25.05.2024Amendment by applicant 
Applicant(s)For all designated states
Elmos Semiconductor SE
Heinrich-Hertz-Straße 1
44227 Dortmund / DE
For all designated states
Hyundai Mobis Co., Ltd.
(Yeoksam-dong)
203, Teheran-ro
Gangnam-gu
Seoul 06141 / KR
[2023/40]
Inventor(s)01 / Abaza, Fikret
44227 Dortmund / DE
02 / Sudhaus, Andre
44227 Dortmund / DE
03 / Friemann, Uwe
44227 Dortmund / DE
04 / Friesen, Andreas
44227 Dortmund / DE
05 / Schmalhorst, Mats
44227 Dortmund / DE
06 / Liedtke, Marco
44227 Dortmund / DE
 [2023/40]
Representative(s)dompatent von Kreisler Selting Werner - Partnerschaft von Patent- und Rechtsanwälten mbB
Deichmannhaus am Dom
Bahnhofsvorplatz 1
50667 Köln / DE
[2023/40]
Application number, filing date23185796.218.03.2021
[2023/40]
Priority number, dateDE20201010747918.03.2020         Original published format: DE102020107479
[2023/40]
Filing languageDE
Procedural languageDE
PublicationType: A2 Application without search report 
No.:EP4254797
Date:04.10.2023
Language:DE
[2023/40]
Type: A3 Search report 
No.:EP4254797
Date:29.11.2023
Language:DE
[2023/48]
Search report(s)(Supplementary) European search report - dispatched on:EP27.10.2023
ClassificationIPC:H01L27/02, H02H9/04, H03K17/16, H01L23/60, G01R31/26
[2023/48]
CPC:
H01L27/0251 (EP,KR,US); G01R31/2853 (KR); H01L29/12 (US);
B60R21/01 (KR,US); G01R31/2607 (KR); G01R31/2648 (EP,KR);
G01R31/52 (KR); G01R31/56 (KR); H01L21/8249 (KR,US);
H03K17/162 (EP,KR); B60R2021/01211 (KR,US); B60R2021/01272 (KR,US);
H01L2224/48247 (EP); H01L23/60 (EP) (-)
Former IPC [2023/40]H03K17/16
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2024/26]
Former [2023/40]AL,  AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MK,  MT,  NL,  NO,  PL,  PT,  RO,  RS,  SE,  SI,  SK,  SM,  TR 
TitleGerman:VORRICHTUNG UND VERFAHREN ZUR VERHINDERUNG EINES SUBSTRATSTROMS IN EINEM IC-HALBLEITERSUBSTRAT[2023/40]
English:DEVICE AND METHOD FOR INHIBITING A SUBSTRATE CURRENT IN AN IC SEMICONDUCTOR SUBSTRATE[2023/40]
French:DISPOSITIF ET PROCÉDÉ D'INHIBITION DE COURANT DE SUBSTRAT DANS UN SUBSTRAT SEMI-CONDUCTEUR DE CIRCUIT INTÉGRÉ[2023/40]
Examination procedure23.05.2024Amendment by applicant (claims and/or description)
23.05.2024Examination requested  [2024/26]
23.05.2024Date on which the examining division has become responsible
Parent application(s)   TooltipEP21714114.2  / EP4122012
Fees paidRenewal fee
17.07.2023Renewal fee patent year 03
27.02.2024Renewal fee patent year 04
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Documents cited:Search[A]EP0847089  (SGS THOMSON MICROELECTRONICS [IT]) [A] 1-20 * abstract * * column 5, line 22 - column 6, line 45 *;
 [A]US2005110111  (HORN WOLFGANG [AT]) [A] 1-20 * abstract * * paragraphs [0006] , [0007] , [0008] , [0016] , [0037] *;
 [A]US2008023768  (ALBERKRACK JADE H [US], et al) [A] 1-20 * abstract * * paragraphs [0006] , [0018] , [0019] , [0026] , [0027] *;
 [A]WO2010095003  (FREESCALE SEMICONDUCTOR INC [US], et al) [A] 1-20 * abstract * * page 1, line 39 - page 2, line 3 ** page 4, line 19 - page 6, line 17 *;
 [A]US2012176161  (PETRUZZI LUCA [AT]) [A] 1-20 * abstract * * paragraphs [0021] , [0024] , [0025] , [0028] *
by applicantDE602004006973T
 DE4432301
 DE102005048239
 DE102020107479
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.