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EP4312275
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EP About this file: EP4312275
| EP4312275 - CELL STRUCTURES OF INSULATED GATE BIPOLAR TRANSISTOR IGBT WITH A CONTROL GATE AND A CARRIER STORAGE LAYER, AND THEIR MANUFACTURING METHODS [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 02.08.2024 Database last updated on 19.10.2024 | |
| Former | The application has been published Status updated on 29.12.2023 | Most recent event Tooltip | 02.08.2024 | The date on which the examining division becomes responsible, has been established | 02.08.2024 | Request for examination filed | published on 04.09.2024 [2024/36] | 02.08.2024 | Change - designated states | published on 04.09.2024 [2024/36] | Applicant(s) | For all designated states Nexperia Technology (Shanghai) Ltd. Room 201, No. 458 Jumen Road HuangPu District Shanghai 200025 / CN | For all designated states Nexperia B.V. Jonkerbosplein 52 6534 AB Nijmegen / NL | [2024/05] | Inventor(s) | 01 /
ZHANG, Ken Shanghai / CN | 02 /
ZHU, Chunlin Manchester / GB | 03 /
JIANG, Ke Shanghai / CN | [2024/05] | Representative(s) | Pjanovic, Ilija Nexperia B.V. Legal & IP Jonkerbosplein 52 6534 AB Nijmegen / NL | [2024/05] | Application number, filing date | 23188522.9 | 28.07.2023 | [2024/05] | Priority number, date | CN202210909115 | 29.07.2022 Original published format: CN202210909115 | [2024/05] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP4312275 | Date: | 31.01.2024 | Language: | EN | [2024/05] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 13.12.2023 | Classification | IPC: | H01L29/739, H01L21/331, // H01L29/06, H01L29/40, H01L29/417 | [2024/05] | CPC: |
H01L29/7397 (EP,CN,US);
H01L29/7398 (CN);
H01L29/063 (US);
H01L21/26513 (US);
H01L29/0696 (EP,CN);
H01L29/1095 (US);
H01L29/401 (CN);
H01L29/42356 (CN);
H01L29/4236 (CN);
H01L29/66348 (EP,CN,US);
H01L29/0619 (EP);
H01L29/407 (EP);
H01L29/417 (EP)
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| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, ME, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2024/36] |
| Former [2024/05] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, ME, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Extension states | BA | Not yet paid | Validation states | KH | Not yet paid | MA | Not yet paid | MD | Not yet paid | TN | Not yet paid | Title | German: | ZELLSTRUKTUREN AUS EINEM IGBT MIT ISOLIERTEM GATE-BIPOLARTRANSISTOR MIT EINEM STEUERGATE UND EINER TRÄGERSPEICHERSCHICHT UND HERSTELLUNGSVERFAHREN DAFÜR | [2024/05] | English: | CELL STRUCTURES OF INSULATED GATE BIPOLAR TRANSISTOR IGBT WITH A CONTROL GATE AND A CARRIER STORAGE LAYER, AND THEIR MANUFACTURING METHODS | [2024/05] | French: | STRUCTURES DE CELLULES D'IGBT À TRANSISTOR BIPOLAIRE À GRILLE ISOLÉE AVEC UNE GRILLE DE COMMANDE ET UNE COUCHE DE STOCKAGE DE SUPPORT, ET LEURS PROCÉDÉS DE FABRICATION | [2024/05] | Examination procedure | 31.07.2024 | Amendment by applicant (claims and/or description) | 31.07.2024 | Examination requested [2024/36] | 31.07.2024 | Date on which the examining division has become responsible |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]EP1760790 (TOYOTA CHUO KENKYUSHO KK [JP], et al) [A] 1-15 * paragraph [0038] ** figure 7 *; | [Y]US2015069461 (MISU SHINICHIRO [JP], et al) [Y] 1-15 * paragraph [0021] * * paragraph [0045] - paragraph [0047] * * figure 4 *; | [Y]US2015076554 (LAVEN JOHANNES GEORG [DE], et al) [Y] 1-15 * paragraph [0034] - paragraph [0049] * * figure 1A *; | [Y]US2018097093 (PFIRSCH FRANK DIETER [DE], et al) [Y] 1-15 * paragraph [0070] - paragraph [0073] * * paragraph [0086] * * figures 9,10 *; | [Y]US2019074367 (NAITO TATSUYA [JP]) [Y] 1-15 * paragraph [0098] * * paragraph [0127] * * figures 5,10 * |