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Extract from the Register of European Patents

EP About this file: EP4246581

EP4246581 - PHOTODETECTORS, PREPARATION METHODS FOR PHOTODETECTORS, PHOTODETECTOR ARRAYS, AND PHOTODETECTION TERMINALS [Right-click to bookmark this link]
StatusThe application has been published
Status updated on  18.08.2023
Database last updated on 13.09.2024
Most recent event   Tooltip25.07.2024New entry: Application deemed to be withdrawn: despatch of communication + time limit 
Applicant(s)For all designated states
Shenzhen Adaps Photonics Technology Co., Ltd.
12th Floor, Building 3
Nanshan Zhiyuan Chongwen Park
No. 3370 Liuxian Avenue
Taoyuan Street, Nanshan District
Shenzhen, Guangdong 518055 / CN
[2023/38]
Inventor(s)01 / Zang, Kai
Shenzhen, Guangdong, 518055 / CN
02 / Li, Shuang
Shenzhen, Guangdong, 518055 / CN
03 / Jia, Jieyang
Shenzhen, Guangdong, 518055 / CN
 [2023/38]
Representative(s)Gulde & Partner
Patent- und Rechtsanwaltskanzlei mbB
Wallstraße 58/59
10179 Berlin / DE
[2023/38]
Application number, filing date23190530.812.09.2019
[2023/38]
Priority number, dateCN20181133976712.11.2018         Original published format: CN201811339767
[2023/38]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP4246581
Date:20.09.2023
Language:EN
[2023/38]
Type: A3 Search report 
No.:EP4246581
Date:03.01.2024
Language:EN
[2024/01]
Search report(s)(Supplementary) European search report - dispatched on:EP04.12.2023
ClassificationIPC:H01L31/0232, H01L31/107, G01S7/481, H01L27/146
[2024/01]
CPC:
H01L31/02327 (EP); H01L31/09 (CN); H01L31/02027 (US);
H01L27/1446 (EP); H01L27/14629 (EP); H01L31/0216 (CN,US);
H01L31/0352 (CN,US); H01L31/107 (EP,US); H01L31/1075 (EP);
G01S7/4816 (EP) (-)
Former IPC [2023/38]H01L27/146
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2023/38]
TitleGerman:PHOTODETEKTOREN, HERSTELLUNGSVERFAHREN FÜR PHOTODETEKTOREN, PHOTODETEKTORANORDNUNGEN UND PHOTODETEKTORANSCHLÜSSE[2023/38]
English:PHOTODETECTORS, PREPARATION METHODS FOR PHOTODETECTORS, PHOTODETECTOR ARRAYS, AND PHOTODETECTION TERMINALS[2023/38]
French:PHOTODÉTECTEURS, PROCÉDÉS DE PRÉPARATION DE PHOTODÉTECTEURS, RÉSEAUX DE PHOTODÉTECTEURS ET TERMINAUX DE PHOTODÉTECTION[2023/38]
Examination procedure24.07.2024Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time
Parent application(s)   TooltipEP19883758.5  / EP3882981
Fees paidRenewal fee
09.08.2023Renewal fee patent year 03
09.08.2023Renewal fee patent year 04
09.08.2023Renewal fee patent year 05
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Documents cited:Search[Y]US2015372040  (PRALLE MARTIN U [US], et al) [Y] 1-15 * figure 6 *;
 [Y]US2018090536  (MANDAI SHINGO [US], et al) [Y] 1-15 * paragraphs [0034] , [0 54] , [0 66] - [0067]; figure 4A *;
 [A]  - GHIONI M ET AL, "Resonant-Cavity-Enhanced Single-Photon Avalanche Diodes on Reflecting Silicon Substrates", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE, USA, (20080315), vol. 20, no. 6, ISSN 1041-1135, pages 413 - 415, XP011204653 [A] 1-15 * figure 3 *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.