EP4283676 - PRECISION RESISTOR FOR NON-PLANAR SEMICONDUCTOR DEVICE ARCHITECTURE [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 27.10.2023 Database last updated on 18.10.2024 | Most recent event Tooltip | 14.06.2024 | Publication of search report | published on 17.07.2024 [2024/29] | 14.06.2024 | Change - classification | published on 17.07.2024 [2024/29] | 14.06.2024 | Change - classification | published on 17.07.2024 [2024/29] | Applicant(s) | For all designated states INTEL Corporation 2200 Mission College Blvd. Santa Clara, CA 95054 / US | [2023/48] | Inventor(s) | 01 /
YEH, Jeng-Ya D. Portland, Oregon, 97229 / US | 02 /
VANDERVOORN, Peter J. Hilsboro, Oregon, 97124 / US | 03 /
HAFEZ, Wald M. Portland, Oregon, 97229 / US | 04 /
JAN, Chia-Hong Portland, Oregon, 97229 / US | 05 /
TSAI, Curtis Beaverton, Oregon, 97007 / US | 06 /
PARK, Joodong Portland, Oregon, 97229 / US | [2023/48] | Representative(s) | Goddar, Heinz J. Boehmert & Boehmert Anwaltspartnerschaft mbB Pettenkoferstrasse 22 80336 München / DE | [2023/48] | Application number, filing date | 23193624.6 | 18.06.2013 | [2023/48] | Priority number, date | US201213625698 | 24.09.2012 Original published format: US201213625698 | [2023/48] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP4283676 | Date: | 29.11.2023 | Language: | EN | [2023/48] | Type: | A3 Search report | No.: | EP4283676 | Date: | 17.07.2024 | Language: | EN | [2024/29] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 13.06.2024 | Classification | IPC: | H01L27/06, H10N97/00, // H01L27/088, H01L29/66, H01L21/8234 | [2024/29] | CPC: |
H01L21/823431 (EP,CN,KR,US);
H01L29/66795 (KR,US);
H01L23/64 (CN);
H01L27/0629 (EP,CN,KR,US);
H01L27/0886 (EP,CN,US);
H01L28/20 (EP,CN,KR,US);
H01L29/66545 (EP,CN,US)
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Former IPC [2023/48] | H01L27/06, H01L27/088, H01L29/66, H01L21/8234 | Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2023/48] | Title | German: | PRÄZISIONSWIDERSTAND FÜR EINE NICHTPLANARE HALBLEITERBAUELEMENTARCHITEKTUR | [2023/48] | English: | PRECISION RESISTOR FOR NON-PLANAR SEMICONDUCTOR DEVICE ARCHITECTURE | [2023/48] | French: | RÉSISTANCE DE PRÉCISION POUR UNE ARCHITECTURE NON PLANE DE DISPOSITIF À SEMI-CONDUCTEURS | [2023/48] | Examination procedure | 28.08.2023 | Examination requested [2023/48] | Parent application(s) Tooltip | EP13839477.0 / EP2898533 | EP17191534.1 / EP3285300 | Fees paid | Renewal fee | 28.08.2023 | Renewal fee patent year 03 | 28.08.2023 | Renewal fee patent year 04 | 28.08.2023 | Renewal fee patent year 05 | 28.08.2023 | Renewal fee patent year 06 | 28.08.2023 | Renewal fee patent year 07 | 28.08.2023 | Renewal fee patent year 08 | 28.08.2023 | Renewal fee patent year 09 | 28.08.2023 | Renewal fee patent year 10 | 28.08.2023 | Renewal fee patent year 11 | 30.05.2024 | Renewal fee patent year 12 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US2004051395 (BRINDLE CHRISTOPHER N [US], et al); | [A]US2007069293 (KAVALIEROS JACK T [US], et al); | [I]US2011057267 (CHUANG HARRY HAK-LAY [TW], et al); | [A]US2012181612 (YANG JING-HWANG [TW], et al) |