-
EP4544599
European procedure
- EP About this file
- EP Legal status
- EP Federated register
- EP Event history
- EP Citations
- EP Patent family
- EP All documents
Extract from the Register of European Patents
EP About this file: EP4544599
| EP4544599 - SPIN-QUBIT SEMICONDUCTOR DEVICES WITH QUANTUM DOTS EMBEDDED IN A 28-SILICON ENRICHED DEVICE LAYER ON A NON-ENRICHED SUBSTRATE AND A BARRIER SUPERLATTICE AND RELATED METHODS [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 28.03.2025 Database last updated on 28.03.2026 | |
| Former | The international publication has been made Status updated on 15.03.2024 | ||
| Former | unknown Status updated on 23.02.2024 | Most recent event Tooltip | 22.08.2025 | Change: Validation states | published on 24.09.2025 [2025/39] | 22.08.2025 | Change - extension states | published on 24.09.2025 [2025/39] | Applicant(s) | For all designated states Atomera Incorporated 750 University Avenue, Suite 280 Los Gatos, CA 95032 / US | [2025/18] | Inventor(s) | 01 /
HYTHA, Marek Brookline, Massachusetts 02446 / US | 02 /
CODY, Nyles, Wynn Tempe, Arizona 85284 / US | 03 /
MEARS, Robert, J. Wellesley, Massachusetts 02482 / US | 04 /
TAKEUCHI, Hideki San Jose, California 95129 / US | 05 /
WEEKS, Keith, Doran Chandler, Arizona 85224 / US | [2025/18] | Representative(s) | Page White Farrer Bedford House 21a John Street London WC1N 2BF / GB | [2025/18] | Application number, filing date | 23853704.7 | 21.06.2023 | [2025/18] | WO2023US25803 | Priority number, date | US202263366698P | 21.06.2022 Original published format: US 202263366698 P | [2025/18] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | WO2024054282 | Date: | 14.03.2024 | Language: | EN | [2024/11] | Type: | A2 Application without search report | No.: | EP4544599 | Date: | 30.04.2025 | Language: | EN | The application published by WIPO in one of the EPO official languages on 14.03.2024 takes the place of the publication of the European patent application. | [2025/18] | Search report(s) | International search report - published on: | EP | 27.06.2024 | Classification | IPC: | H01L29/06, H01L29/10, H01L29/66, H01L29/76, H01L29/12, H01L29/16, B82Y10/00 | [2025/18] | CPC: |
B82Y10/00 (EP);
H10D30/023 (US);
H10D30/014 (EP);
H10D30/402 (EP);
H10D48/3835 (EP);
H10D62/118 (EP);
H10D62/364 (EP);
H10D62/814 (EP);
H10D62/8162 (EP);
H10D62/822 (EP);
H10D62/83 (EP);
H10D64/27 (EP);
H10H20/812 (EP,US);
H10H20/824 (US);
H10H20/826 (US);
H10P14/3211 (EP);
H10P14/3238 (EP);
H10P14/3252 (EP);
H10P14/3258 (EP);
H10P14/3411 (EP,US);
H10P14/3461 (US);
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, ME, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2025/18] | Title | German: | SPIN-QUBIT-HALBLEITERBAUELEMENTE MIT IN EINER MIT 28 SILICIUM ANGEREICHERTEN BAUELEMENTSCHICHT AUF EINEM NICHT ANGEREICHERTEN SUBSTRAT UND BARRIERENÜBERGITTER UND ZUGEHÖRIGE VERFAHREN | [2025/18] | English: | SPIN-QUBIT SEMICONDUCTOR DEVICES WITH QUANTUM DOTS EMBEDDED IN A 28-SILICON ENRICHED DEVICE LAYER ON A NON-ENRICHED SUBSTRATE AND A BARRIER SUPERLATTICE AND RELATED METHODS | [2025/18] | French: | DISPOSITIFS À SEMI-CONDUCTEUR À POINTS QUANTIQUES INTÉGRÉS ET PROCÉDÉS ASSOCIÉS | [2025/18] | Entry into regional phase | 19.12.2024 | National basic fee paid | 19.12.2024 | Designation fee(s) paid | 19.12.2024 | Examination fee paid | Examination procedure | 20.08.2024 | Request for preliminary examination filed International Preliminary Examining Authority: EP | 19.12.2024 | Examination requested [2025/18] | 19.12.2024 | Date on which the examining division has become responsible | 25.07.2025 | Amendment by applicant (claims and/or description) | Fees paid | Renewal fee | 15.05.2025 | Renewal fee patent year 03 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [Y] US6333516 (KATOH RIICHI et al.) | [Y] JPH0997896 (NIPPON TELEGRAPH & TELEPHONE et al.) | [Y] US2003052317 (OHSHIMA TOSHIO et al.) | [Y] WO2022006396 (ATOMERA INC et al.) | [Y] US7718996 (DUKOVSKI ILIJA et al.) | [Y] WO2022006379 (ATOMERA INC et al.) | [A] WO2017213638 (INTEL CORP et al.) | [A] US2005199870 (GRAY ALLEN L et al.) | by applicant | US2003057416 | US2003034529 | US6472685 | US4937204 | US5357119 | US5683934 | US5216262 | US7105895 | GB2347520 | US6376337 | US2022344155 | US2022352322 | "Phenomena in silicon nanostructure devices", APPLIED PHYSICS AND MATERIALS SCIENCE & PROCESSING, 6 September 2000 (2000-09-06), pages 391 - 402 | LUO ET AL.: "Chemical Design of Direct-Gap Light-Emitting Silicon", PHYSICAL REVIEW LETTERS, vol. 89, no. 7, 12 August 2002 (2002-08-12), XP002314002, DOI: 10.1103/PhysRevLett.89.076802 DOI: http://dx.doi.org/10.1103/PhysRevLett.89.076802 |