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Extract from the Register of European Patents

EP About this file: EP4447122

EP4447122 - GATE STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE GATE STRUCTURE [Right-click to bookmark this link]
StatusRequest for examination was made
Status updated on  13.09.2024
Database last updated on 02.11.2024
Most recent event   Tooltip25.10.2024Publication of search reportpublished on 27.11.2024 [2024/48]
25.10.2024Change - classificationpublished on 27.11.2024 [2024/48]
25.10.2024Change - classificationpublished on 27.11.2024 [2024/48]
Applicant(s)For all designated states
Samsung Electronics Co., Ltd.
129, Samsung-ro
Yeongtong-gu
Suwon-si, Gyeonggi-do 16677 / KR
[2024/42]
Inventor(s)01 / LYU, Sungnam
16677 Suwon-si / KR
02 / NOH, Hyojung
16677 Suwon-si / KR
03 / YANG, Minwoo
16677 Suwon-si / KR
04 / LEE, Byounghoon
16677 Suwon-si / KR
05 / JEONG, Eulji
16677 Suwon-si / KR
 [2024/42]
Representative(s)Marks & Clerk LLP
15 Fetter Lane
London EC4A 1BW / GB
[2024/42]
Application number, filing date24158858.121.02.2024
[2024/42]
Priority number, dateKR2023004787812.04.2023         Original published format: KR 20230047878
[2024/42]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP4447122
Date:16.10.2024
Language:EN
[2024/42]
Type: A3 Search report
No.:EP4447122
Date:27.11.2024
Language:EN
[2024/48]
Search report(s)(Supplementary) European search report - dispatched on:EP29.10.2024
ClassificationIPC:H01L29/49, H10B12/00
[2024/42]
CPC:
H01L29/4925 (EP); H10B12/34 (EP,US); H10B12/053 (EP,US);
H10B12/315 (EP,US); H10B12/482 (EP,US); H10B12/488 (EP)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   ME,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2024/42]
Extension statesBANot yet paid
Validation statesGENot yet paid
KHNot yet paid
MANot yet paid
MDNot yet paid
TNNot yet paid
TitleGerman:GATE-STRUKTUR UND HALBLEITERBAUELEMENT MIT DER GATE-STRUKTUR[2024/42]
English:GATE STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE GATE STRUCTURE[2024/42]
French:STRUCTURE DE GRILLE ET DISPOSITIF SEMI-CONDUCTEUR COMPRENANT LA STRUCTURE DE GRILLE[2024/42]
Examination procedure21.03.2024Examination requested  [2024/42]
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