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Extract from the Register of European Patents

EP About this file: EP0000702

EP0000702 - Process for forming a flow-resistant resist mask of radioation-sensitive material [Right-click to bookmark this link]
Former [1981/40]Process for forming a flow-resistant resist mask
[1981/40]
StatusNo opposition filed within time limit
Status updated on  14.09.2016
Database last updated on 24.08.2024
Most recent event   Tooltip14.09.2016No opposition filed within time limit 
Applicant(s)For all designated states
International Business Machines Corporation
New Orchard Road
Armonk, NY 10504 / US
[N/P]
Inventor(s)01 / Chiu, George Tein-Chu
48 Brandy Lane
Wappingers Falls NY 13590 / US
02 / Fredericks, Edward Carmine
Frances Drive Box 215
Hopewell Junction NY 12533 / US
[N/P]
Representative(s)Kreidler, Eva-Maria
Schönaicher Strasse 220
D-7030 Böblingen / DE
[N/P]
Former [1981/40]Kreidler, Eva-Maria, Dr. rer. nat.
Schönaicher Strasse 220
D-7030 Böblingen / DE
Application number, filing date78100337.110.07.1978
Priority number, dateUS1977082246808.08.1977         Original published format: US 822468
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report 
No.:EP0000702
Date:21.02.1979
Language:DE
[N/P]
Type: B1 Patent specification 
No.:EP0000702
Date:07.10.1981
Language:DE
[1981/40]
Search report(s)(Supplementary) European search report - dispatched on:EP07.12.1978
ClassificationIPC:G03F7/26, // H01L21/312
[1981/40]
CPC:
G03F7/40 (EP,US)
Former IPC [1981/40]G03F7/02
Designated contracting statesDE,   FR,   GB 
TitleGerman:Verfahren zur Herstellung einer fliessbeständigen Resistmaske aus strahlungsempfindlichem Resistmaterial[1981/40]
English:Process for forming a flow-resistant resist mask of radioation-sensitive material[1981/40]
French:Procédé de préparation d'un masque de photorésist résistant à l'écoulement en matériau sensible à une radiation[1981/40]
Former [1981/40]Verfahren zur Herstellung einer fliessbeständigen Resistmaske
Former [1981/40]Process for forming a flow-resistant resist mask
Former [1981/40]Procédé de préparation d'un masque de photorésist résistant à l'écoulement
File destroyed:12.06.1999
Examination procedure25.07.1979Examination requested
03.04.1980Despatch of a communication from the examining division (Time limit: M06)
29.08.1980Reply to a communication from the examining division
19.01.1981Despatch of communication of intention to grant (Approval: )
27.04.1981Communication of intention to grant the patent
12.05.1981Fee for grant paid
12.05.1981Fee for publishing/printing paid
Opposition(s)07.07.1982No opposition filed within time limit [ N /P ]
Fees paidRenewal fee
18.07.1980Renewal fee patent year 03
21.07.1981Renewal fee patent year 04
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Documents cited:Search[A]SU451978
 [A]  - IBM TECHNICAL DISCLOSURE BULLETIN, Band 18, Nr. 5, Oktober 1975, Armonk, New YorkB. BERGIN et al.: "Single layer optical lift-off process"
 [A]  - CHEMICAL ABSTRACTS, Band 82, 1975, Columbus, Ohio (USA) A.I. PARAMONOV et al.: "Positive photoresist", Seite 486Zusammenfassung Nr. 163064f; & SU-A-451 978
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.