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Extract from the Register of European Patents

EP About this file: EP0043863

EP0043863 - Process for compensating the proximity effect in electron beam projection devices [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  22.03.1985
Database last updated on 03.09.2024
Most recent event   Tooltip14.08.2009Change - representativepublished on 16.09.2009  [2009/38]
Applicant(s)For:FR  GB 
International Business Machines Corporation
New Orchard Road
Armonk, NY 10504 / US
For:DE 
IBM DEUTSCHLAND GMBH
Pascalstrasse 100
D-70569 Stuttgart / DE
[N/P]
Former [1982/03]For:FR  GB 
International Business Machines Corporation
Old Orchard Road
Armonk, N.Y. 10504 / US
For:DE 
IBM DEUTSCHLAND GMBH
Pascalstrasse 100
D-70569 Stuttgart / DE
Inventor(s)01 / Bohlen, Harald
Geleener Strasse 26
D-7030 Böblingen / DE
02 / Engelke, Helmut, Dr.
Ahornweg 33
D-7031 Altdorf / DE
03 / Greschner, Johann, Dr.
Zollernstrasse 14
D-7401 Pliezhausen / DE
04 / Nehmiz, Peter, Dr.
Karl-Weller-Strasse 2
D-7000 Stuttgart 80 / DE
[1982/03]
Representative(s)Teufel, Fritz
IBM Deutschland Management & Business Support GmbH
Patentwesen u. Urheberrecht
71137 Ehningen / DE
[N/P]
Former [2009/38]Teufel, Fritz
IBM Deutschland Management & Business Support GmbH Patentwesen u. Urheberrecht
71137 Ehningen / DE
Former [2008/37]Teufel, Fritz
IBM Deutschland GmbH Intellectual Property
70548 Stuttgart / DE
Former [1982/03]Teufel, Fritz, Dipl.-Phys.
IBM Deutschland Informationssysteme GmbH Patentwesen und Urheberrecht Pascalstrasse 100
W-7000 Stuttgart 80 / DE
Application number, filing date80103966.010.07.1980
[1982/03]
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report 
No.:EP0043863
Date:20.01.1982
Language:DE
[1982/03]
Type: B1 Patent specification 
No.:EP0043863
Date:16.05.1984
Language:DE
[1984/20]
Search report(s)(Supplementary) European search report - dispatched on:EP29.04.1981
ClassificationIPC:G03F7/20
[1982/03]
CPC:
B82Y10/00 (EP,US); H01J37/3174 (EP,US); B82Y40/00 (EP,US);
H01J2237/31769 (EP,US)
Designated contracting statesDE,   FR,   GB [1982/03]
TitleGerman:Verfahren zur Kompensation des Proximity Effekts bei Elektronenstrahl-Projektionsanlagen[1982/03]
English:Process for compensating the proximity effect in electron beam projection devices[1982/03]
French:Procédé pour la compensation de l'effet de proximité dans les dispositifs de projection de rayonnement électronique[1982/03]
File destroyed:12.06.1999
Examination procedure19.05.1981Examination requested  [1982/03]
08.02.1983Despatch of a communication from the examining division (Time limit: M04)
01.06.1983Reply to a communication from the examining division
29.07.1983Despatch of communication of intention to grant (Approval: )
21.10.1983Communication of intention to grant the patent
06.12.1983Fee for grant paid
06.12.1983Fee for publishing/printing paid
Opposition(s)19.02.1985No opposition filed within time limit [1985/21]
Fees paidRenewal fee
23.07.1982Renewal fee patent year 03
22.07.1983Renewal fee patent year 04
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Cited inExaminationEP0001042
 US4198569
    - EXTENDED ABSTRACTS, Band 80-1, Mai 1980, Zusammenfassung 260, Seiten 663-665 PRINCETON (US) N. SUGIYAMA et al.: "Advanced EB Proximity Effect Correction for Fine-Pattern Device Fabrication"
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.