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EP0032608
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EP About this file: EP0032608
| EP0032608 - Column line powered static ram cell [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 20.01.1984 Database last updated on 21.03.2026 | Most recent event Tooltip | 07.07.2007 | Change - inventor | published on 08.08.2007 [2007/32] | Applicant(s) | For all designated states MOSTEK CORPORATION 1215 West Crosby Road Carrollton Dallas, Texas 75006 / US | [N/P] |
| Former [1981/30] | For all designated states MOSTEK CORPORATION 1215 West Crosby Road Carrollton Dallas, Texas 75006 / US | Inventor(s) | 01 /
Parkinson, Ward D. 7337 Northview Boise, Idaho 83704 / US | [1981/30] | Representative(s) | Kearney, Kevin David Nicholas KILBURN & STRODE 20 Red Lion Street London, WC1R 4PJ / GB | [N/P] |
| Former [1983/02] | Kearney, Kevin David Nicholas KILBURN & STRODE 30 John Street London, WC1N 2DD / GB | ||
| Former [1981/30] | Broome, Geoffrey Edward KILBURN & STRODE 30 John Street London, WC1N 2DD / GB | Application number, filing date | 80300205.4 | 22.01.1980 | [1981/30] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0032608 | Date: | 29.07.1981 | Language: | EN | [1981/30] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 02.02.1981 | Classification | IPC: | G11C11/40, H01L27/02, H01L27/10, H01L27/06, H03K3/356 | [1981/30] | CPC: |
H03K3/35606 (EP);
G11C11/412 (EP);
G11C11/417 (EP);
H10B10/15 (EP);
H10D88/00 (EP)
| Designated contracting states | BE, CH, DE, FR, IT, NL, SE [1981/30] | Title | German: | Statische RAM-Zelle mit Stromversorgung über die Spaltenleiter | [1981/30] | English: | Column line powered static ram cell | [1981/30] | French: | Circuit de mémoire vive statique alimentée par les conducteurs de colonne | [1981/30] | File destroyed: | 14.07.1990 | Examination procedure | 29.01.1982 | Examination requested [1982/14] | 27.04.1983 | Despatch of a communication from the examining division (Time limit: M04) | 08.09.1983 | Application deemed to be withdrawn, date of legal effect [1984/12] | 07.10.1983 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [1984/12] | Fees paid | Renewal fee | 27.01.1982 | Renewal fee patent year 03 | 18.01.1983 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | US3949385 (SONODA GEORGE et al.) | DE2751481 (MOSTEK CORP et al.) | US3540007 (HODGES DAVID A et al.) | US4091461 (BOOHER ROBERT K et al.) | US4125854 (MCKENNY VERNON G et al.) | GB1457423 (NAT RES DEV et al.) | EP0002364 (FUJITSU LTD et al.) | US3530443 (CRAFTS HAROLD S et al.) | US3969708 (SONODA GEORGE et al.) | US3541531 (IWERSEN JOHN E et al.) | ELECTRONICS, Vol. 52, No. 9, April 1979, New York, U.S.A. R.P. CAPECE: "The race heats up in fast static RAMs", pages 125-135 * pages 125-135, paragraph "MOSTEK goes its own way"; figure 3 * | ELECTRONICS, Vol. 52, No. 20, 27th September 1979, New York, U.S.A. D. HUFFMAN: "Polysilicon-load RAMs plug into mainframes or microprocessors", pages 131-139 * pages 132-133, paragraph "Concepts for a dense new RAM" * | IBM TECHNICAL DISCLOSURE BULLETIN, Vol. 13, np. 7, December 1980, New York, U.S.A. F.H. GAENSSLEN et al.: "Fet memory cell", page 1751 * page 1751, lines 17-25; figures A and B * | IBM TECHNICAL DISCLOSURE BULLETIN, Vol. 13, No. 10, March 1971, New York, U.S.A. U. BAITINGER et al.: "MOS FET storage cell", page 3160 * page 3160, lines 7-13; figure * | IBM TECHNICAL DISCLOSURE BULLETIN, Vol. 14, No. 12, May 1972, New York, U.S.A. U. BAITINGER et al.: "Monolithic storage cell with FETs", pages 3640,3641 * page 3640, lines 1-23; figure * | IBM TECHNICAL DISCLOSURE BULLETIN, Vol. 14, No. 4, September 1971, New York, U.S.A. D.W. KEMERER: "Storage cell using double-threshold field-effect transistors", pages 1077-1078 * page 1077, lines 10-16; figure 1 * | IBM TECHNICAL DISCLOSURE BULLETIN, Vol. 17, No. 12, May 1975 New York, U.S.A. L.B. FREEMAN et al.: "Four-device static enhancement/depletion memory array cell", pages 3575-3576 * page 3575, lines 1-5; figure 1 * | IBM TECHNICAL DISCLOSURE BULLETIN, vol. 13, np. 7, December 1980, New York, U.S.A. F.H. GAENSSLEN et al.: "Fet memory cell", page 1751 | IBM TECHNICAL DISCLOSURE BULLETIN, vol. 13, no. 10, March 1971, New York, U.S.A. U. BAITINGER et al.: "MOS FET storage cell", page 3160 | ELECTRONICS, Vol. 50, No. 10, May 1975, New York, U.S.A. S. YOUNG: "Uncompromising 4-K static RAM runs fast on little power", pages 99-103 & DE - A - 2 751 481 (MOSTEK) (8th June 1978). |