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EP0027712
European procedure
Extract from the Register of European Patents
EP About this file: EP0027712
| EP0027712 - Semiconductor annealing [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 21.09.1984 Database last updated on 11.04.2026 | Most recent event Tooltip | 21.09.1984 | No opposition filed within time limit | published on 21.11.1984 [1984/47] | Applicant(s) | For:FR
IT
ITT INDUSTRIES, INC. 320 Park Avenue New York, NY 10022 / US | For:DE
Deutsche ITT Industries GmbH Hans-Bunte-Strasse 19 79108 Freiburg / DE | [N/P] |
| Former [1981/17] | For:FR
IT
ITT INDUSTRIES INC. 320 Park Avenue New York, NY 10022 / US | ||
| For:DE
Deutsche ITT Industries GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg / DE | Inventor(s) | 01 /
Young, John Michael 46 Paddock Mead Harlow, Essex / GB | 02 /
Scovell, Peter Denis 17 Petrebrook Chelmer Village Chelmsford, Essex / GB | [1981/17] | Representative(s) | Dennis, Mark Charles, et al Nortel Networks Intellectual Property Law Group London Road Harlow Essex CM17 9NA / GB | [N/P] |
| Former [1981/17] | Dennis, Mark Charles, et al Nortel Limited Patents and Licensing West Road Harlow Essex CM20 2SH / GB | Application number, filing date | 80303617.7 | 14.10.1980 | [1981/17] | Priority number, date | GB19790036041 | 17.10.1979 Original published format: GB 7936041 | GB19800024758 | 29.07.1980 Original published format: GB 8024758 | [1981/17] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0027712 | Date: | 29.04.1981 | Language: | EN | [1981/17] | Type: | B1 Patent specification | No.: | EP0027712 | Date: | 23.11.1983 | Language: | EN | [1983/47] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 17.02.1981 | Classification | IPC: | H01L21/265, H01L21/324 | [1981/17] | CPC: |
H10P30/204 (EP,US);
H10P30/21 (EP,US);
H10P30/28 (EP);
H10P95/90 (EP,US);
Y10S148/09 (EP,US)
| Designated contracting states | DE, FR, IT [1981/17] | Title | German: | Ausglühen eines Halbleiters | [1981/17] | English: | Semiconductor annealing | [1981/17] | French: | Procédé de recuit d'un semiconducteur | [1981/17] | Examination procedure | 23.03.1981 | Examination requested [1981/23] | 26.03.1982 | Despatch of a communication from the examining division (Time limit: M04) | 17.07.1982 | Reply to a communication from the examining division | 26.10.1982 | Despatch of a communication from the examining division (Time limit: M04) | 16.11.1982 | Reply to a communication from the examining division | 01.02.1983 | Despatch of communication of intention to grant (Approval: ) | 29.04.1983 | Communication of intention to grant the patent | 20.05.1983 | Fee for grant paid | 20.05.1983 | Fee for publishing/printing paid | Opposition(s) | 24.08.1984 | No opposition filed within time limit [1984/47] | Fees paid | Renewal fee | 04.10.1982 | Renewal fee patent year 03 | 01.09.1983 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A] JP54083374 | [X] APPLIED PHYSICS LETTERS, Vol. 33, No. 8, 15th October 1978, pages 751-753, New York, U.S.A., R.L. COHEN et al.: "Thermally assisted flash annealing of silicon and germanium" [X] | [A] PATENTS ABSTRACTS OF JAPAN, Vol. 3, No. 105, 7th September 1979, page 80E135 Tokyo, JP, & JP-A-54 083 374 (FUJITSU). [A] | [P] ELECTRONICS LETTERS, Vol. 16, No. 16, July 1980, pages 614-615, Hitchin Herts, GB, P.D. SCOVELL et al.: "Low temperature thermal annealing of arsenic implanted silicon" [P] | Examination | THE JOURNAL OF IMMUNOLOGY, vol. 114, pages 950-957, no. 3, March 1975 G.W. WOOD et al. "Receptor sites for antigen-antibody complexes on cells derived from solid tumors: detection by means of antibody sensitized sheep erythrocytes labeled with technetium-99m" [X] |