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EP0022687
European procedure
Extract from the Register of European Patents
EP About this file: EP0022687
| EP0022687 - Integrated monolithic circuit equivalent to a transistor associated with three antisaturation diodes, and method for making it [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 05.06.1984 Database last updated on 31.08.2024 | Most recent event Tooltip | 05.06.1984 | No opposition filed within time limit | published on 08.08.1984 [1984/32] | Applicant(s) | For all designated states THOMSON-CSF 173, Boulevard Haussmann F-75008 Paris / FR | [1982/21] |
| Former [1981/03] | For all designated states THOMSON-CSF 173, Boulevard Haussmann F-75008 Paris / FR | Inventor(s) | 01 /
Quoirin, Jean-Baptiste "THOMSON-CSF" SCPI 173, bld Haussmann F-75360 Paris Cedex 08 / FR | [1981/03] | Representative(s) | de Beaumont, Michel, et al Thomson-CSF Propriété Intellectuelle 92045 Paris La Défense Cédex 67 / FR | [N/P] |
| Former [1981/03] | de Beaumont, Michel, et al THOMSON-CSF SCPI F-92045 PARIS LA DEFENSE CEDEX 67 / FR | Application number, filing date | 80400834.0 | 10.06.1980 | [1981/03] | Priority number, date | FR19790014996 | 12.06.1979 Original published format: FR 7914996 | [1981/03] | Filing language | FR | Procedural language | FR | Publication | Type: | A1 Application with search report | No.: | EP0022687 | Date: | 21.01.1981 | Language: | FR | [1981/03] | Type: | B1 Patent specification | No.: | EP0022687 | Date: | 20.07.1983 | Language: | FR | [1983/29] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 08.10.1980 | Classification | IPC: | H01L27/06, H01L27/08 | [1981/03] | CPC: |
H01L27/0825 (EP,US);
H01L27/0248 (EP,US);
H01L27/0761 (EP,US)
| Designated contracting states | DE, GB, IT, NL [1981/03] | Title | German: | An einen Transistor mit drei Anti-Sättigungsdioden äquivalente integrierte monolithische Schaltung und Verfahren zu deren Herstellung | [1981/03] | English: | Integrated monolithic circuit equivalent to a transistor associated with three antisaturation diodes, and method for making it | [1981/03] | French: | Circuit intégré monolithique équivalent à un transistor associé à trois diodes anti-saturation et son procédé de fabrication | [1981/03] | Examination procedure | 02.02.1981 | Examination requested [1981/16] | 09.06.1982 | Despatch of a communication from the examining division (Time limit: M04) | 24.06.1982 | Reply to a communication from the examining division | 18.10.1982 | Despatch of communication of intention to grant (Approval: ) | 18.01.1983 | Communication of intention to grant the patent | 26.03.1983 | Fee for grant paid | 26.03.1983 | Fee for publishing/printing paid | Opposition(s) | 25.04.1984 | No opposition filed within time limit [1984/32] | Fees paid | Renewal fee | 26.05.1982 | Renewal fee patent year 03 | 26.05.1983 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | US4138690 [ ] (NAWA KEIJI, et al); | FR2282721 [ ] (RCA CORP [US]); | FR2101228 [ ] (IBM); | US4072981 [ ] (BLACK CHRISTOPHER T, et al) |