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Extract from the Register of European Patents

EP About this file: EP0042585

EP0042585 - Semiconductor laser device [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  31.07.1986
Database last updated on 20.09.2024
Most recent event   Tooltip31.07.1986No opposition filed within time limitpublished on 17.09.1986 [1986/38]
Applicant(s)For all designated states
Hitachi, Ltd.
5-1, Marunouchi 1-chome
Chiyoda-ku
Tokyo 100 / JP
[N/P]
Former [1981/52]For all designated states
Hitachi, Ltd.
5-1, Marunouchi 1-chome
Chiyoda-ku, Tokyo 100 / JP
Inventor(s)01 / Kuroda, Takao
4-815-2, Nishi-koigakubo Kokubunji-shi
Tokyo / JP
02 / Umeda, Jun-ichi
612-10, Kamiichibu-katamachi Hachioji-shi
Tokyo / JP
03 / Saito, Katsutoshi
2-19-14, Nangai Kigashiyamato-shi
Tokyo / JP
04 / Kajimura, Takashi
2-32-A402, Koyasu-cho Hachioji-shi
Tokyo / JP
[1981/52]
Representative(s)Strehl, Peter, et al
Patentanwälte
Strehl Schübel-Hopf & Partner
Maximilianstrasse 54
80538 München / DE
[N/P]
Former [1983/07]Strehl, Peter, Dipl.-Ing., et al
Patentanwälte Strehl Schübel-Hopf Groening u. Partner Postfach 22 14 55
D-80504 München / DE
Former [1981/52]Strehl, Peter, Dipl.-Ing.
K.L. Schiff Dr. A. v. Funer Dipl.-Ing. P. Strehl Dr. U. Schübel-Hopf Dipl.-Ing. D. Ebbinghaus Dr.-Ing. D. Finck Patentanwälte Mariahilfplatz 2 & 3
D-8000 München 90 / DE
Application number, filing date81104655.616.06.1981
[1981/52]
Priority number, dateJP1980008288120.06.1980         Original published format: JP 8288180
[1981/52]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0042585
Date:30.12.1981
Language:EN
[1981/52]
Type: B1 Patent specification 
No.:EP0042585
Date:02.10.1985
Language:EN
[1985/40]
Search report(s)(Supplementary) European search report - dispatched on:EP22.10.1981
ClassificationIPC:H01S3/19
[1981/52]
CPC:
H01S5/20 (EP,US); H01S5/2231 (EP,US); H01S5/2059 (EP,US)
Designated contracting statesDE,   FR,   GB,   NL [1981/52]
TitleGerman:Halbleiter-Laservorrichtung[1981/52]
English:Semiconductor laser device[1981/52]
French:Dispositif laser à semiconducteur[1981/52]
File destroyed:03.03.2001
Examination procedure15.10.1981Examination requested  [1981/52]
05.05.1983Despatch of a communication from the examining division (Time limit: M05)
17.10.1983Reply to a communication from the examining division
07.12.1983Despatch of a communication from the examining division (Time limit: M04)
06.04.1984Reply to a communication from the examining division
10.09.1984Despatch of communication of intention to grant (Approval: )
21.02.1985Communication of intention to grant the patent
31.05.1985Fee for grant paid
31.05.1985Fee for publishing/printing paid
Opposition(s)03.07.1986No opposition filed within time limit [1986/38]
Fees paidRenewal fee
28.06.1983Renewal fee patent year 03
27.06.1984Renewal fee patent year 04
28.06.1985Renewal fee patent year 05
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:SearchJP55124293  [ ];
 JP2000429380  [ ];
 US4011113  [ ] (THOMPSON GEORGE H B, et al);
 USRE29395E  [ ];
 US3920491  [ ] (YONEZU HIROO)
    [ ] - PATENT ABSTRACTS OF JAPAN, Volume 4, No. 181, 13th December 1980 (E-37) (663) & JP - A - 55- 124293 (Matsushita) * Abstract *, & JP55124293 A 00000000
    [ ] - Electronics Letters, Volume 15, No. 4, February 1979 Hitelin Herts (GB) "Twin-Transverse-Junction Stripe Laser with Linear Light/Current Characteristic and Low Threshold" pages 133-134 * page 133, left-hand column *
ExaminationUS4121177
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.