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Extract from the Register of European Patents

EP About this file: EP0052860

EP0052860 - Monolithic integrated semiconductor bridge circuit [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  02.07.1987
Database last updated on 24.07.2024
Most recent event   Tooltip02.07.1987No opposition filed within time limitpublished on 19.08.1987 [1987/34]
Applicant(s)For:DE 
Deutsche ITT Industries GmbH
Hans-Bunte-Strasse 19
79108 Freiburg / DE
For:FR  GB  IT  NL 
ITT INDUSTRIES, INC.
320 Park Avenue
New York, NY 10022 / US
[N/P]
Former [1982/22]For:DE 
Deutsche ITT Industries GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg / DE
For:FR  GB  IT  NL 
ITT INDUSTRIES INC.
320 Park Avenue
New York, NY 10022 / US
Inventor(s)01 / Gerlach, Albrecht, Dr.
Allmendsberg 31
D-7831 Freiamt / DE
[1982/22]
Representative(s)Morstadt, Volker
Deutsche ITT Industries GmbH, Patentabteilung, Hans-Bunte-Strasse 19
79108 Freiburg / DE
[N/P]
Former [1985/38]Morstadt, Volker, Dipl.-Ing.
Deutsche ITT Industries GmbH, Patentabteilung, Hans-Bunte-Strasse 19
D-79108 Freiburg / DE
Former [1982/22]Stutzer, Gerhard, Dr.
Deutsche ITT Industries GmbH Patent- und Lizenzabteilung Hans-Bunte-Strasse 19 Postfach 840
D-7800 Freiburg / DE
Application number, filing date81109760.919.11.1981
[1982/22]
Priority number, dateDE1980304444426.11.1980         Original published format: DE 3044444
[1982/22]
Filing languageDE
Procedural languageDE
PublicationType: A2 Application without search report 
No.:EP0052860
Date:02.06.1982
Language:DE
[1982/22]
Type: A3 Search report 
No.:EP0052860
Date:16.02.1983
Language:DE
[1983/07]
Type: B1 Patent specification 
No.:EP0052860
Date:03.09.1986
Language:DE
[1986/36]
Search report(s)(Supplementary) European search report - dispatched on:EP15.12.1982
ClassificationIPC:H01L27/06
[1982/22]
CPC:
H02M7/219 (EP); H01L27/0814 (EP); H01L27/0927 (EP);
H02M1/0085 (EP)
Designated contracting statesDE,   FR,   GB,   IT,   NL [1982/22]
TitleGerman:Monolithisch integrierte Gleichrichter-Brückenschaltung[1982/22]
English:Monolithic integrated semiconductor bridge circuit[1982/22]
French:Circuit en pont intégré monolithique à semi-conducteur[1982/22]
Examination procedure08.07.1983Examination requested  [1983/37]
14.12.1984Despatch of a communication from the examining division (Time limit: M06)
14.06.1985Reply to a communication from the examining division
08.11.1985Despatch of communication of intention to grant (Approval: )
06.03.1986Communication of intention to grant the patent
26.05.1986Fee for grant paid
26.05.1986Fee for publishing/printing paid
Opposition(s)04.06.1987No opposition filed within time limit [1987/34]
Fees paidRenewal fee
21.10.1983Renewal fee patent year 03
26.11.1984Renewal fee patent year 04
19.11.1985Renewal fee patent year 05
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Documents cited:Search[AD]DE1639177  (ITT IND GMBH DEUTSCHE [DE])
 [A]  - IBM TECHNICAL DISCLOSURE BULLETIN, Band 20, Heft 11 A, April 1978, New York. P. Humel: "On-chip substrate voltage generator", Seiten 4528 bis 4529
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.