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EP0036764
European procedure
Extract from the Register of European Patents
EP About this file: EP0036764
| EP0036764 - A semiconductor device with a V-groove insulating isolation structure and a method of manufacturing such a device [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 24.09.1987 Database last updated on 24.08.2024 | Most recent event Tooltip | 24.09.1987 | No opposition filed within time limit | published on 11.11.1987 [1987/46] | Applicant(s) | For all designated states FUJITSU LIMITED 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi Kanagawa 211 / JP | [N/P] |
| Former [1981/39] | For all designated states FUJITSU LIMITED 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 / JP | Inventor(s) | 01 /
Fukuda, Takeshi 1802-9-203, Nagao Takatsu-ku Kawasaki-shi Kanagawa 213 / JP | [1981/39] | Representative(s) | Sunderland, James Harry, et al Haseltine Lake LLP Lincoln House 300 High Holborn London WC1V 7JH / GB | [N/P] |
| Former [1981/39] | Sunderland, James Harry, et al HASELTINE LAKE & CO Hazlitt House 28 Southampton Buildings Chancery Lane London WC2A 1AT / GB | Application number, filing date | 81301189.7 | 19.03.1981 | [1981/39] | Priority number, date | JP19800038070 | 25.03.1980 Original published format: JP 3807080 | [1981/39] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0036764 | Date: | 30.09.1981 | Language: | EN | [1981/39] | Type: | A3 Search report | No.: | EP0036764 | Date: | 18.01.1984 | Language: | EN | [1984/03] | Type: | B1 Patent specification | No.: | EP0036764 | Date: | 20.11.1986 | Language: | EN | [1986/47] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 18.11.1983 | Classification | IPC: | H01L21/90, H01L21/268, H01L21/76 | [1981/39] | CPC: |
H01L21/763 (EP,US);
H01L21/268 (EP,US);
H01L21/76 (EP,US);
H01L21/76888 (EP,US);
H01L23/525 (EP,US);
H01L2924/0002 (EP,US)
| C-Set: |
H01L2924/0002, H01L2924/00 (EP,US)
| Designated contracting states | DE, FR, GB [1986/47] |
| Former [1981/52] | DE, FR, GB, NL | ||
| Former [1981/39] | AT, BE, CH, DE, FR, GB, IT, LI, LU, NL, SE | Title | German: | Halbleiteranordnung mit einer Isolationsstruktur mit V-förmigen Nuten und Verfahren zur Herstellung einer solchen Anordnung | [1981/39] | English: | A semiconductor device with a V-groove insulating isolation structure and a method of manufacturing such a device | [1981/39] | French: | Dispositif semiconducteur comportant une structure d'isolation comportant der rainures en forme de V et procédé pour la fabrication de ce dispositif | [1981/39] | File destroyed: | 12.06.1999 | Examination procedure | 21.07.1981 | Despatch of communication of loss of particular rights: designated state(s) AT, BE, CH, IT, LI, LU, SE | 01.10.1981 | Loss of particular rights, legal effect: designated state(s) | 11.06.1984 | Examination requested [1984/35] | 26.07.1985 | Despatch of a communication from the examining division (Time limit: M04) | 05.12.1985 | Reply to a communication from the examining division | 14.04.1986 | Despatch of communication of intention to grant (Approval: ) | 22.05.1986 | Communication of intention to grant the patent | 11.08.1986 | Fee for grant paid | 11.08.1986 | Fee for publishing/printing paid | Opposition(s) | 21.08.1987 | No opposition filed within time limit [1987/46] | Fees paid | Renewal fee | 15.03.1983 | Renewal fee patent year 03 | 09.03.1984 | Renewal fee patent year 04 | 18.03.1985 | Renewal fee patent year 05 | 13.03.1986 | Renewal fee patent year 06 | Penalty fee | Penalty fee Rule 85a EPC 1973 | 20.04.1981 | AT M02 Not yet paid | 20.04.1981 | BE M02 Not yet paid | 20.04.1981 | CH M02 Not yet paid | 20.04.1981 | IT M02 Not yet paid | 20.04.1981 | LU M02 Not yet paid | 20.04.1981 | SE M02 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]US3956033 (ROBERSON DONALD K); | [A]DE2837800 (PHILIPS PATENTVERWALTUNG); | [E]EP0030286 (ITT IND GMBH DEUTSCHE [DE], et al) | [A] - APPLIED PHYSICS LETTERS, vol. 34, no. 11, June 1979, pages 737-739, New York, USA C.P. WU et al.: "Pulsed laser annealing of ion-implanted polycrystalline silicon films" |