| EP0055608 - Semiconductor memory device and method of making it [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 24.09.1986 Database last updated on 28.03.2026 | Most recent event Tooltip | 24.09.1986 | No opposition filed within time limit | published on 12.11.1986 [1986/46] | Applicant(s) | For all designated states FUJITSU LIMITED 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi Kanagawa 211 / JP | [N/P] |
| Former [1982/27] | For all designated states FUJITSU LIMITED 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 / JP | Inventor(s) | 01 /
Shirai, Kazunari 1310-4 Aza Kurinosawa Bukko-cho Hodogaya-ku Yokohama-shi Kanagawa 240 / JP | 02 /
Tanaka, Izumi 2-2-11 Fujizuka Kohoku-ku Yokohama-shi Kanagawa 222 / JP | [1982/27] | Representative(s) | Rackham, Stephen Neil, et al Gill Jennings & Every LLP Broadgate House 7 Eldon Street London EC2M 7LH / GB | [N/P] |
| Former [1982/27] | Rackham, Stephen Neil, et al GILL JENNINGS & EVERY, Broadgate House, 7 Eldon Street London EC2M 7LH / GB | Application number, filing date | 81306105.8 | 23.12.1981 | [1982/27] | Priority number, date | JP19800184715 | 25.12.1980 Original published format: JP 18471580 | [1982/27] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0055608 | Date: | 07.07.1982 | Language: | EN | [1982/27] | Type: | A3 Search report | No.: | EP0055608 | Date: | 29.06.1983 | Language: | EN | [1983/26] | Type: | B1 Patent specification | No.: | EP0055608 | Date: | 21.11.1985 | Language: | EN | [1985/47] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 28.04.1983 | Classification | IPC: | H01L27/10, H01L21/82, G11C17/00 | [1983/27] | CPC: |
H10B20/00 (EP,US);
H10B20/25 (EP,US)
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| Former IPC [1982/27] | H01L27/10, G11C17/00, H01L21/82 | Designated contracting states | DE, FR, GB, NL [1982/27] | Title | German: | Halbleiterspeichervorrichtung und Verfahren zu ihrer Herstellung | [1982/27] | English: | Semiconductor memory device and method of making it | [1982/27] | French: | Dispositif de mémoire semi-conducteur et procédé pour sa fabrication | [1982/27] | Examination procedure | 25.11.1983 | Examination requested [1984/05] | 07.02.1985 | Despatch of communication of intention to grant (Approval: ) | 10.05.1985 | Communication of intention to grant the patent | 19.07.1985 | Fee for grant paid | 19.07.1985 | Fee for publishing/printing paid | Opposition(s) | 22.08.1986 | No opposition filed within time limit [1986/46] | Fees paid | Renewal fee | 10.12.1983 | Renewal fee patent year 03 | 21.12.1984 | Renewal fee patent year 04 |
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