Extract from the Register of European Patents

EP About this file: EP0055608

EP0055608 - Semiconductor memory device and method of making it [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  24.09.1986
Database last updated on 28.03.2026
Most recent event   Tooltip24.09.1986No opposition filed within time limitpublished on 12.11.1986 [1986/46]
Applicant(s)For all designated states
FUJITSU LIMITED
1015, Kamikodanaka, Nakahara-ku Kawasaki-shi
Kanagawa 211 / JP
[N/P]
Former [1982/27]For all designated states
FUJITSU LIMITED
1015, Kamikodanaka, Nakahara-ku
Kawasaki-shi, Kanagawa 211 / JP
Inventor(s)01 / Shirai, Kazunari
1310-4 Aza Kurinosawa Bukko-cho
Hodogaya-ku Yokohama-shi Kanagawa 240 / JP
02 / Tanaka, Izumi
2-2-11 Fujizuka
Kohoku-ku Yokohama-shi Kanagawa 222 / JP
[1982/27]
Representative(s)Rackham, Stephen Neil, et al
Gill Jennings & Every LLP Broadgate House 7 Eldon Street
London EC2M 7LH / GB
[N/P]
Former [1982/27]Rackham, Stephen Neil, et al
GILL JENNINGS & EVERY, Broadgate House, 7 Eldon Street
London EC2M 7LH / GB
Application number, filing date81306105.823.12.1981
[1982/27]
Priority number, dateJP1980018471525.12.1980         Original published format: JP 18471580
[1982/27]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0055608
Date:07.07.1982
Language:EN
[1982/27]
Type: A3 Search report 
No.:EP0055608
Date:29.06.1983
Language:EN
[1983/26]
Type: B1 Patent specification 
No.:EP0055608
Date:21.11.1985
Language:EN
[1985/47]
Search report(s)(Supplementary) European search report - dispatched on:EP28.04.1983
ClassificationIPC:H01L27/10, H01L21/82, G11C17/00
[1983/27]
CPC:
H10B20/00 (EP,US); H10B20/25 (EP,US)
Former IPC [1982/27]H01L27/10, G11C17/00, H01L21/82
Designated contracting statesDE,   FR,   GB,   NL [1982/27]
TitleGerman:Halbleiterspeichervorrichtung und Verfahren zu ihrer Herstellung[1982/27]
English:Semiconductor memory device and method of making it[1982/27]
French:Dispositif de mémoire semi-conducteur et procédé pour sa fabrication[1982/27]
Examination procedure25.11.1983Examination requested  [1984/05]
07.02.1985Despatch of communication of intention to grant (Approval: )
10.05.1985Communication of intention to grant the patent
19.07.1985Fee for grant paid
19.07.1985Fee for publishing/printing paid
Opposition(s)22.08.1986No opposition filed within time limit [1986/46]
Fees paidRenewal fee
10.12.1983Renewal fee patent year 03
21.12.1984Renewal fee patent year 04
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