EP0068164 - Two state memory cell [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 05.07.1990 Database last updated on 02.11.2024 | Most recent event Tooltip | 05.07.1990 | No opposition filed within time limit | published on 22.08.1990 [1990/34] | Applicant(s) | For all designated states International Business Machines Corporation New Orchard Road Armonk, NY 10504 / US | [N/P] |
Former [1983/01] | For all designated states International Business Machines Corporation Old Orchard Road Armonk, N.Y. 10504 / US | Inventor(s) | 01 /
Malaviya, Shashi Dhar 1 Trenton Road Fishkill New York 12524 / US | [1983/01] | Representative(s) | Gaugel, Heinz Schönaicher Strasse 220 D-7030 Böblingen / DE | [N/P] |
Former [1983/01] | Gaugel, Heinz, Dipl.-Ing. Schönaicher Strasse 220 D-7030 Böblingen / DE | Application number, filing date | 82104821.2 | 02.06.1982 | [1983/01] | Priority number, date | US19810279282 | 30.06.1981 Original published format: US 279282 | [1983/01] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0068164 | Date: | 05.01.1983 | Language: | EN | [1983/01] | Type: | A3 Search report | No.: | EP0068164 | Date: | 06.11.1985 | Language: | EN | [1985/45] | Type: | B1 Patent specification | No.: | EP0068164 | Date: | 13.09.1989 | Language: | EN | [1989/37] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 03.09.1985 | Classification | IPC: | G11C11/38 | [1983/01] | CPC: |
G11C11/38 (EP,US)
| Designated contracting states | DE, FR, GB [1983/01] | Title | German: | Speicherzelle mit zwei Schaltzuständen | [1983/01] | English: | Two state memory cell | [1983/01] | French: | Cellule de mémoire à deux états | [1983/01] | File destroyed: | 15.01.2000 | Examination procedure | 19.05.1983 | Examination requested [1983/31] | 18.05.1987 | Despatch of a communication from the examining division (Time limit: M04) | 16.07.1987 | Reply to a communication from the examining division | 23.09.1987 | Despatch of a communication from the examining division (Time limit: M04) | 10.12.1987 | Reply to a communication from the examining division | 23.02.1988 | Despatch of a communication from the examining division (Time limit: M04) | 04.05.1988 | Reply to a communication from the examining division | 26.09.1988 | Despatch of communication of intention to grant (Approval: No) | 28.11.1988 | Despatch of communication of intention to grant (Approval: later approval) | 09.12.1988 | Communication of intention to grant the patent | 03.01.1989 | Fee for grant paid | 03.01.1989 | Fee for publishing/printing paid | Opposition(s) | 13.06.1990 | No opposition filed within time limit [1990/34] | Fees paid | Renewal fee | 28.06.1984 | Renewal fee patent year 03 | 24.06.1985 | Renewal fee patent year 04 | 24.06.1986 | Renewal fee patent year 05 | 23.06.1987 | Renewal fee patent year 06 | 21.06.1988 | Renewal fee patent year 07 | 27.06.1989 | Renewal fee patent year 08 |
Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]DE1564863 (TELEFUNKEN PATENT) | [A] - IBM TECHNICAL DISCLOSURE BULLETIN, vol. 23, no. 1, June 1980, pages 165-166, New York, US; W.K. CHU et al.: "Tunneling junction bipolar transistors in a double EPI process" | [A] - IBM TECHNICAL DISCLOSURE BULLETIN, vol. 21, no. 2, July 1978, pages 675-676, New York, US; G.M. OLESZEK et al.: "Phase layer boron diffusion process for second breakdown free power switching transistors" | Examination | US3943554 |