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EP0098318
European procedure
Extract from the Register of European Patents
EP About this file: EP0098318
| EP0098318 - Process for the formation of grooves having essentially vertical lateral silicium walls by reactive ion etching [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 10.12.1987 Database last updated on 31.08.2024 | Most recent event Tooltip | 10.12.1987 | No opposition filed within time limit | published on 27.01.1988 [1988/04] | Applicant(s) | For all designated states IBM DEUTSCHLAND GMBH Pascalstrasse 100 D-70569 Stuttgart / DE | For all designated states International Business Machines Corporation New Orchard Road Armonk, NY 10504 / US | [N/P] |
| Former [1984/03] | For all designated states IBM DEUTSCHLAND GMBH Pascalstrasse 100 D-70569 Stuttgart / DE | ||
| For all designated states International Business Machines Corporation Old Orchard Road Armonk, N.Y. 10504 / US | Inventor(s) | 01 /
Behringer, Uwe, Dr. Dipl.-Phys. Wolfsbergstrasse 27 D-7403 Ammerbuch / DE | 02 /
Greschner, Johann, Dr. Zollernstrasse 14 D-7401 Pliezhausen / DE | 03 /
Trumpp, Hans-Joachim, Dr. Pfeilstrasse 26 D-7000 Stuttgart 80 / DE | [1984/03] | Representative(s) | Kreidler, Eva-Maria Schönaicher Strasse 220 D-7030 Böblingen / DE | [N/P] |
| Former [1984/03] | Kreidler, Eva-Maria, Dr. rer. nat. Schönaicher Strasse 220 D-7030 Böblingen / DE | Application number, filing date | 82105957.3 | 03.07.1982 | [1984/03] | Filing language | DE | Procedural language | DE | Publication | Type: | A1 Application with search report | No.: | EP0098318 | Date: | 18.01.1984 | Language: | DE | [1984/03] | Type: | B1 Patent specification | No.: | EP0098318 | Date: | 11.02.1987 | Language: | DE | [1987/07] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 25.04.1983 | Classification | IPC: | H01L21/308, H01L21/306, G03F1/00, G03F7/02 | [1984/03] | CPC: |
G03F1/20 (EP,US);
G03F7/094 (EP,US);
H01L21/0271 (EP,US);
H01L21/3065 (EP,US);
H01L21/3081 (EP,US);
H01L21/31138 (EP,US)
| Designated contracting states | DE, FR, GB, IT [1984/03] | Title | German: | Verfahren zum Herstellen von Gräben mit im wesentlichen vertikalen Seitenwänden in Silicium durch reaktives Ionenätzen | [1984/03] | English: | Process for the formation of grooves having essentially vertical lateral silicium walls by reactive ion etching | [1984/03] | French: | Procédé pour la formation de rainures à parois latérales principalement verticales dans du silicium utilisant une attaque par ions réactifs | [1984/03] | Examination procedure | 23.05.1984 | Examination requested [1984/31] | 30.05.1985 | Despatch of a communication from the examining division (Time limit: M04) | 28.09.1985 | Reply to a communication from the examining division | 26.03.1986 | Despatch of communication of intention to grant (Approval: ) | 05.08.1986 | Communication of intention to grant the patent | 03.09.1986 | Fee for grant paid | 03.09.1986 | Fee for publishing/printing paid | Opposition(s) | 12.11.1987 | No opposition filed within time limit [1988/04] | Fees paid | Renewal fee | 24.07.1984 | Renewal fee patent year 03 | 12.07.1985 | Renewal fee patent year 04 | 04.07.1986 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [AD]WO8000639 (WESTERN ELECTRIC CO [US]); | [A]EP0012859 (IBM [US]); | [A]EP0048291 (IBM DEUTSCHLAND [DE], et al) | [A] - IEEE TRANSACTIONS ON ELECTRON DEVICES. Band ED-28, Nr. 11, November 1981, Seiten 1405-1410, New York, USA | [A] - JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Band 126, Nr. 6, Juni 1979, Seiten 1024-1028, Princeton, USA | [A] - EXTENDED ABSTRACTS, Band 79-2, 14.-19. Oktober 1979, Seiten 1521-1523, Princeton, N.J., USA |