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EP0073167
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EP About this file: EP0073167
| EP0073167 - Logical bistable circuit using low threshold voltage field effect transistors, and memory device using such a circuit [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 21.12.1984 Database last updated on 18.03.2026 | Most recent event Tooltip | 07.07.2007 | Change - inventor | published on 08.08.2007 [2007/32] | Applicant(s) | For all designated states THOMSON-CSF 173, Boulevard Haussmann F-75008 Paris / FR | [1983/09] | Inventor(s) | 01 /
Pham, Ngu Tung THOMSON-CSF SCPI 173, bld Haussmann F-75379 Paris Cedex 08 / FR | [1983/09] | Representative(s) | Lepercque, Jean, et al Thomson-CSF Propriété Intellectuelle 92045 PARIS LA DEFENSE CEDEX 67 / FR | [N/P] |
| Former [1983/09] | Lepercque, Jean, et al THOMSON-CSF SCPI F-92045 PARIS LA DEFENSE CEDEX 67 / FR | Application number, filing date | 82401543.2 | 17.08.1982 | [1983/09] | Priority number, date | FR19810016114 | 21.08.1981 Original published format: FR 8116114 | [1983/09] | Filing language | FR | Procedural language | FR | Publication | Type: | A1 Application with search report | No.: | EP0073167 | Date: | 02.03.1983 | Language: | FR | [1983/09] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 10.01.1983 | Classification | IPC: | G11C11/40, H03K3/353 | [1983/09] | CPC: |
H03K3/3565 (EP,US);
G11C11/40 (EP,US);
G11C11/412 (EP,US)
| Designated contracting states | DE, GB, IT, NL, SE [1983/09] | Title | German: | Logischer bistabiler Schaltkreis mit Feldeffekttransistoren geringer Schwellspannung und Speichervorrichtung mit einem solchen Schaltkreis | [1983/09] | English: | Logical bistable circuit using low threshold voltage field effect transistors, and memory device using such a circuit | [1983/09] | French: | Circuit logique bistable utilisant des transistors à effet de champ à faible tension de seuil, et dispositif de mémorisation comportant un tel circuit | [1983/09] | File destroyed: | 13.07.1991 | Examination procedure | 10.03.1983 | Examination requested [1983/20] | 07.03.1984 | Despatch of a communication from the examining division (Time limit: M04) | 19.05.1984 | Reply to a communication from the examining division | 17.09.1984 | Despatch of communication of intention to grant (Approval: ) | 09.10.1984 | Communication of intention to grant the patent | 15.12.1984 | Application withdrawn by applicant [1985/08] | Fees paid | Renewal fee | 20.07.1984 | Renewal fee patent year 03 |
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