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Extract from the Register of European Patents

EP About this file: EP0077337

EP0077337 - MOS POWER TRANSISTOR [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  03.06.1983
Database last updated on 04.11.2024
Most recent event   Tooltip07.07.2007Change - inventorpublished on 08.08.2007  [2007/32]
Applicant(s)For all designated states
MOTOROLA, INC.
1303 East Algonquin Road
Schaumburg, IL 60196 / US
[1983/17]
Inventor(s)01 / NEW, Thorndike C.T.
deceased / US
02 / TERRY, Lewis E.
4812 E. Mitchell
Phoenix, AZ 85018 / US
[1983/17]
Application number, filing date82901076.822.02.1982
[1983/17]
WO1982US00217
Priority number, dateUS1981023732323.02.1981         Original published format: US 237323
[1983/17]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report
No.:WO8202981
Date:02.09.1982
[1982/21]
Type: A1 Application with search report 
No.:EP0077337
Date:27.04.1983
Language:EN
The application published by WIPO in one of the EPO official languages on 02.09.1982 takes the place of the publication of the European patent application.
[1983/17]
Search report(s)
ClassificationIPC:H01L23/48, H01L27/10, H01L29/08, H01L29/44, H01L29/52, H01L29/60, H01L29/78
[1983/17]
CPC:
H01L29/7802 (EP,US); H01L29/0847 (EP)
Designated contracting statesDE,   FR,   GB,   NL [1983/17]
TitleGerman:MOS-LEISTUNGSTRANSISTOR[1983/17]
English:MOS POWER TRANSISTOR[1983/17]
French:TRANSISTOR DE PUISSANCE MOS[1983/17]
File destroyed:18.06.1989
Examination procedure21.02.1983Despatch of communication that the application is deemed to be withdrawn, reason: filing fee / search fee not paid in time  [1983/31]
21.04.1983Application deemed to be withdrawn, date of legal effect  [1983/31]
Fees paidPenalty fee
Penalty fee Rule 85a EPC 1973
25.11.1982DE   M02   Not yet paid
25.11.1982FR   M02   Not yet paid
25.11.1982GB   M02   Not yet paid
25.11.1982NL   M02   Not yet paid
Penalty fee Rule 85b EPC 1973
02.03.1983M02   Not yet paid
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Cited inInternational search[X]JPS5374385  (HITACHI LTD);
 [X]JPS54885  (NIPPON ELECTRIC CO);
 [A]US4145700  (JAMBOTKAR CHAKRAPANI G);
 [A]US4206469  (HANES MAURICE H [US], et al);
 [X]JPS5585073  (HITACHI LTD)
 [X]  - IBM Technical Disclosure Bulletin, issued April 1974, R.C. CADY Jr. et al., Integration Technique for Closed Field-Effect Transistors, Volume 16, #11, pages 3519, 3520
 [A]  - IEEE Transactions on Electron Devices, issued October, 1978, K. LISIAK et al. , Optimization of Nonplanar Power Mos Transistors, Volume ED-25, #10, pages 1229 -1234, see Figure 5.
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.