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EP0104922
European procedure
Extract from the Register of European Patents
EP About this file: EP0104922
| EP0104922 - Electron beam exposure system [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 14.04.1989 Database last updated on 29.06.2024 | Most recent event Tooltip | 14.04.1989 | No opposition filed within time limit | published on 31.05.1989 [1989/22] | Applicant(s) | For all designated states FUJITSU LIMITED 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi Kanagawa 211 / JP | [N/P] |
| Former [1984/14] | For all designated states FUJITSU LIMITED 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 / JP | Inventor(s) | 01 /
Yasuda, Hiroshi c/o Fujitsu Limited Patent Department 1015 Kamikodanaka Nakahara-ku Kawasaki 211 / JP | 02 /
Tsuchikawa, Haruo c/o Fujitsu Limited Patent Department 1015 Kamikodanaka Nakahara-ku Kawasaki 211 / JP | 03 /
Kai, Junichi c/o Fujitsu Limited Patent Department 1015 Kamikodanaka Nakahara-ku Kawasaki 211 / JP | 04 /
Kobayashi, Koichi c/o Fujitsu Limited Patent Department 1015 Kamikodanaka Nakahara-ku Kawasaki 211 / JP | [1984/14] | Representative(s) | Sunderland, James Harry, et al Haseltine Lake LLP Lincoln House 300 High Holborn London WC1V 7JH / GB | [N/P] |
| Former [1984/14] | Sunderland, James Harry, et al HASELTINE LAKE & CO Hazlitt House 28 Southampton Buildings Chancery Lane London WC2A 1AT / GB | Application number, filing date | 83305721.9 | 26.09.1983 | [1984/14] | Priority number, date | JP19820167919 | 27.09.1982 Original published format: JP 16791982 | [1984/14] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0104922 | Date: | 04.04.1984 | Language: | EN | [1984/14] | Type: | A3 Search report | No.: | EP0104922 | Date: | 06.11.1985 | Language: | EN | [1985/45] | Type: | B1 Patent specification | No.: | EP0104922 | Date: | 22.06.1988 | Language: | EN | [1988/25] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 03.09.1985 | Classification | IPC: | H01J37/317, H01J37/302 | [1984/14] | CPC: |
B82Y10/00 (EP,US);
H01J37/3026 (EP,US);
B82Y40/00 (EP,US);
H01J37/3174 (EP,US);
H01L21/30 (EP,US);
H01J2237/31764 (EP,US);
H01J2237/31776 (EP,US)
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| Designated contracting states | DE, FR, GB [1984/14] | Title | German: | Elektronenstrahlbelichtungssystem | [1984/14] | English: | Electron beam exposure system | [1984/14] | French: | Système d'exposition par faisceau d'électrons | [1984/14] | Examination procedure | 06.02.1986 | Examination requested [1986/17] | 21.09.1987 | Despatch of communication of intention to grant (Approval: Yes) | 21.12.1987 | Communication of intention to grant the patent | 09.03.1988 | Fee for grant paid | 09.03.1988 | Fee for publishing/printing paid | Opposition(s) | 23.03.1989 | No opposition filed within time limit [1989/22] | Fees paid | Renewal fee | 20.09.1985 | Renewal fee patent year 03 | 18.09.1986 | Renewal fee patent year 04 | 18.09.1987 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]EP0053225 (IBM [US]) | [A] - IEDM TECHNICAL DIGEST - INTERNATIONAL ELECTRON DEVICES MEETING, 8th-10th December 1980, Washington, D.C., pages 425-428, IEEE, New York, US; Y. SAKAKIBARA et al.: "Electron-beam direct writing technology for 1 mum VLSI fabrication" |