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Extract from the Register of European Patents

EP About this file: EP0135699

EP0135699 - FET read only memory cell with with word line augmented precharging of the bit line [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  19.07.1990
Database last updated on 19.07.2024
Most recent event   Tooltip28.08.1990Lapse of the patent in a contracting statepublished on 17.10.1990 [1990/42]
Applicant(s)For all designated states
International Business Machines Corporation
New Orchard Road
Armonk, NY 10504 / US
[N/P]
Former [1985/14]For all designated states
International Business Machines Corporation
Old Orchard Road
Armonk, N.Y. 10504 / US
Inventor(s)01 / Kouba, Daniel J.
8935 Westchester Drive
Manassas, VA 22111 / US
[1985/14]
Representative(s)Louet Feisser, Arnold
Intellectual Property Department IBM Nederland N.V. Watsonweg 2
1423 ND Uithoorn / NL
[N/P]
Former [1989/13]Louet Feisser, Arnold
Intellectual Property Department IBM Nederland N.V. Watsonweg 2
NL-1423 ND Uithoorn / NL
Former [1985/14]Suringar, Willem Joachim
Intellectual Property Department IBM Nederland N.V. Watsonweg 2
NL-1423 ND Uithoorn / NL
Application number, filing date84108711.724.07.1984
[1985/14]
Priority number, dateUS1983053403520.09.1983         Original published format: US 534035
[1985/14]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0135699
Date:03.04.1985
Language:EN
[1985/14]
Type: A3 Search report 
No.:EP0135699
Date:30.12.1986
Language:EN
[1986/52]
Type: B1 Patent specification 
No.:EP0135699
Date:27.09.1989
Language:EN
[1989/39]
Search report(s)(Supplementary) European search report - dispatched on:EP12.11.1986
ClassificationIPC:G11C17/00
[1985/14]
CPC:
G11C17/12 (EP,US)
Designated contracting statesAT,   DE,   FR,   GB [1985/14]
TitleGerman:Festwertspeicher-FET-Zelle mit vergrösserter Bitleitungsvorladung durch eine Wortleitung[1985/14]
English:FET read only memory cell with with word line augmented precharging of the bit line[1985/14]
French:Cellule FET de mémoire morte avec mentation de précharge de ligne de bit par ligne de mot[1985/14]
File destroyed:20.04.2002
Examination procedure23.11.1984Examination requested  [1985/14]
23.02.1988Despatch of a communication from the examining division (Time limit: M04)
07.06.1988Reply to a communication from the examining division
09.12.1988Despatch of communication of intention to grant (Approval: Yes)
13.02.1989Communication of intention to grant the patent
18.02.1989Fee for grant paid
18.02.1989Fee for publishing/printing paid
Opposition(s)28.06.1990No opposition filed within time limit [1990/36]
Fees paidRenewal fee
04.07.1986Renewal fee patent year 03
28.07.1987Renewal fee patent year 04
29.07.1988Renewal fee patent year 05
25.07.1989Renewal fee patent year 06
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Lapses during opposition  TooltipAT27.09.1989
[1990/42]
Documents cited:Search[A]  - IBM TECHNICAL DISCLOSURE BULLETIN, vol. 16, no. 5, October 1973, page 1642, New York, US; H.O. ASKIN: "Single device push-pull read-only storage cell"
 [A]  - IBM TECHNICAL DISCLOSURE BULLETIN, vol. 15, no. 8, January 1973, pages 2371,2372, New York, US; P.W. COOK et al.: "Read-only memory fabrication by laser formed connections"
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.