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Extract from the Register of European Patents

EP About this file: EP0141311

EP0141311 - Negative working electron beam resist system to be dry-developed [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  19.01.1991
Database last updated on 25.09.2024
Most recent event   Tooltip19.01.1991No opposition filed within time limitpublished on 13.03.1991 [1991/11]
Applicant(s)For all designated states
International Business Machines Corporation
New Orchard Road
Armonk, NY 10504 / US
[N/P]
Former [1985/20]For all designated states
International Business Machines Corporation
Old Orchard Road
Armonk, N.Y. 10504 / US
Inventor(s)01 / Kaplan, Leon H.
1378 Edcris Road
Yorktown Heights, N.Y. 10 598 / US
02 / Kaplan, Richard Dean
11F Canterbury Lane
Wappingers Falls, N.Y. 12 590 / US
[1985/20]
Representative(s)Kreidler, Eva-Maria
Schönaicher Strasse 220
D-7030 Böblingen / DE
[N/P]
Former [1985/20]Kreidler, Eva-Maria, Dr. rer. nat.
Schönaicher Strasse 220
D-7030 Böblingen / DE
Application number, filing date84112183.311.10.1984
[1985/20]
Priority number, dateUS1983054503225.10.1983         Original published format: US 545032
[1985/20]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0141311
Date:15.05.1985
Language:EN
[1985/20]
Type: A3 Search report 
No.:EP0141311
Date:16.06.1987
Language:EN
[1987/25]
Type: B1 Patent specification 
No.:EP0141311
Date:28.03.1990
Language:EN
[1990/13]
Search report(s)(Supplementary) European search report - dispatched on:EP28.04.1987
ClassificationIPC:G03F7/038
[1990/13]
CPC:
G03F7/038 (EP,US); G03F7/36 (EP,US)
Former IPC [1985/20]G03F7/10
Designated contracting statesDE,   FR,   GB [1985/20]
TitleGerman:Negativer Elektronenlack für Trockenentwicklung[1985/30]
English:Negative working electron beam resist system to be dry-developed[1985/20]
French:Réserve négative sensible aux électrons pour développement à sec[1985/30]
File destroyed:15.01.2000
Examination procedure23.11.1984Examination requested  [1985/20]
30.05.1989Despatch of communication of intention to grant (Approval: Yes)
02.08.1989Communication of intention to grant the patent
09.08.1989Fee for grant paid
09.08.1989Fee for publishing/printing paid
Opposition(s)29.12.1990No opposition filed within time limit [1991/11]
Fees paidRenewal fee
29.10.1986Renewal fee patent year 03
23.10.1987Renewal fee patent year 04
22.10.1988Renewal fee patent year 05
27.10.1989Renewal fee patent year 06
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Documents cited:Search[A]JP5746241  ;
 [X]EP0005775  (WESTERN ELECTRIC CO [US]);
 [Y]DE2726813  (MOTOROLA INC);
 [Y]US4241165  (HUGHES HENRY G [US], et al);
 [A]DE3235108  (HITACHI LTD [JP]);
 [AD]US4398001  (CHENG YING Y, et al)
 [Y]  - D.J. ELLIOTT: "Integrated circuit fabrication technology", 1982, pages 209-232, Mc-Graw-Hill, New York, US; Chapter 9 "Development"
 [Y]  - IBM TECHNICAL DISCLOSURE BULLETIN, vol. 25, no. 12, May 1983, page 6307, New York, US; H. HIRAOKA et al.: "Poly(olefin-sulfones)-novolacs as positive/negative tone deep UV-photo-resists"
 [A]  - IBM TECHNICAL DISCLOSURE BULLETIN, vol. 26, no. 1, June 1983, page 392, New York, US; H. HIRAOKA et al.: "Ortho-chlorinated novolacs as host resins for poly(olefin sulfones) in lithographic resist applications"
 [A]  - PATENT ABSTRACTS OF JAPAN, vol. 6, no. 121 (P-126)[999], 6th July 1982; & JP-A-57 46 241 (MITSUBISHI DENKI K.K.) 16-03-1982, & JP5746241 A 00000000
 [XP]  - CHEMICAL ABSTRACTS, vol. 100, no. 20, 14th May 1984, page 559, abstract no. 165352n, Columbus, Ohio, US; H. HIRAOKA et al.: "Deep UV photolithography with composite photoresists made of poly(olefin sulfones)", & ACS SYMP. SER. 1984, 242(Polym. Electron.), 55-64
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.