EP0169938 - Semiconductor memory device having trenched capacitor [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 24.01.1990 Database last updated on 06.11.2024 | Most recent event Tooltip | 24.01.1990 | No opposition filed within time limit | published on 14.03.1990 [1990/11] | Applicant(s) | For all designated states Kabushiki Kaisha Toshiba 72, Horikawa-cho, Saiwai-ku Kawasaki-shi Kanagawa-ken 210-8572 / JP | [N/P] |
Former [1986/06] | For all designated states KABUSHIKI KAISHA TOSHIBA 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP | Inventor(s) | 01 /
Uchida, Yukimasa c/o Patent Division Kabushiki Kaisha Toshiba 1-1 Shibaura 1-chome Minato-ku Tokyo 105 / JP | [1986/06] | Representative(s) | Lehn, Werner, et al Hoffmann Eitle, Patent- und Rechtsanwälte, Postfach 81 04 20 81904 München / DE | [N/P] |
Former [1986/06] | Lehn, Werner, Dipl.-Ing., et al Hoffmann, Eitle & Partner, Patentanwälte, Postfach 81 04 20 D-81904 München / DE | Application number, filing date | 84115474.3 | 14.12.1984 | [1986/06] | Priority number, date | JP19830236850 | 15.12.1983 Original published format: JP 23685083 | JP19830236851 | 15.12.1983 Original published format: JP 23685183 | JP19840007958 | 20.01.1984 Original published format: JP 795884 | [1986/06] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0169938 | Date: | 05.02.1986 | Language: | EN | [1986/06] | Type: | B1 Patent specification | No.: | EP0169938 | Date: | 29.03.1989 | Language: | EN | [1989/13] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 14.11.1985 | Classification | IPC: | H01L27/10 | [1986/06] | CPC: |
H10B12/37 (EP,US)
| Designated contracting states | DE, FR, GB [1986/06] | Title | German: | Halbleiterspeichervorrichtung mit einem in einer Rille angeordneten Kondensator | [1986/06] | English: | Semiconductor memory device having trenched capacitor | [1986/06] | French: | Dispositif de mémoire semi-conducteur comportant un condensateur dans un sillon | [1986/06] | Examination procedure | 14.12.1984 | Examination requested [1986/06] | 07.08.1987 | Despatch of a communication from the examining division (Time limit: M06) | 09.02.1988 | Reply to a communication from the examining division | 06.07.1988 | Despatch of communication of intention to grant (Approval: Yes) | 27.09.1988 | Communication of intention to grant the patent | 13.12.1988 | Fee for grant paid | 13.12.1988 | Fee for publishing/printing paid | Opposition(s) | 30.12.1989 | No opposition filed within time limit [1990/11] | Fees paid | Renewal fee | 16.12.1986 | Renewal fee patent year 03 | 09.12.1987 | Renewal fee patent year 04 | 16.12.1988 | Renewal fee patent year 05 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US4151610 (OCHII KIYOFUMI [JP], et al); | [A]EP0018764 (FUJITSU LTD [JP]); | [A]WO8103241 (WESTERN ELECTRIC CO [US]); | [X]EP0085988 (HITACHI LTD [JP]) |