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EP0114109
European procedure
Extract from the Register of European Patents
EP About this file: EP0114109
| EP0114109 - Semiconductor laser device and method for manufacturing the same [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 28.05.1992 Database last updated on 31.08.2024 | Most recent event Tooltip | 28.05.1992 | No opposition filed within time limit | published on 15.07.1992 [1992/29] | Applicant(s) | For all designated states Kabushiki Kaisha Toshiba 72, Horikawa-cho, Saiwai-ku Kawasaki-shi Kanagawa-ken 210-8572 / JP | [N/P] |
| Former [1984/30] | For all designated states KABUSHIKI KAISHA TOSHIBA 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP | Inventor(s) | 01 /
Okajima, Masaki 3-8-501, Fujimidai-Danchi Kunitachi-shi Tokyo / JP | 02 /
Motegi, Nawoto 1642-231, Nagae Hayama-cho Miura-gun Kanagawa-ken / KP | 03 /
Muto, Yuhei 828-78, Shimokurata-cho Totsuka-ku Yokohama-shi / JP | [1984/30] | Representative(s) | Freed, Arthur Woolf, et al Marks & Clerk Incorporating Edward Evans Barker 90 Long Acre London WC2E 9RA / GB | [N/P] |
| Former [1984/30] | Freed, Arthur Woolf, et al MARKS & CLERK, 57-60 Lincoln's Inn Fields London WC2A 3LS / GB | Application number, filing date | 84300214.8 | 13.01.1984 | [1984/30] | Priority number, date | JP19830004457 | 14.01.1983 Original published format: JP 445783 | [1984/30] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0114109 | Date: | 25.07.1984 | Language: | EN | [1984/30] | Type: | A3 Search report | No.: | EP0114109 | Date: | 06.05.1987 | Language: | EN | [1987/19] | Type: | B1 Patent specification | No.: | EP0114109 | Date: | 24.07.1991 | Language: | EN | [1991/30] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 17.03.1987 | Classification | IPC: | H01S3/19 | [1984/30] | CPC: |
H01S5/20 (EP,US);
H01S5/2231 (EP,US);
H01S5/2059 (EP,US)
| Designated contracting states | DE, FR, GB, NL [1984/30] | Title | German: | Halbleiterlaser-Vorrichtung und Verfahren zu deren Herstellung | [1984/30] | English: | Semiconductor laser device and method for manufacturing the same | [1984/30] | French: | Dispositif laser à semi-conducteur et son procédé de fabrication | [1984/30] | Examination procedure | 25.01.1984 | Examination requested [1984/30] | 23.08.1989 | Despatch of a communication from the examining division (Time limit: M06) | 26.02.1990 | Reply to a communication from the examining division | 01.08.1990 | Despatch of a communication from the examining division (Time limit: M01) | 24.08.1990 | Reply to a communication from the examining division | 05.10.1990 | Despatch of communication of intention to grant (Approval: Yes) | 15.01.1991 | Communication of intention to grant the patent | 12.04.1991 | Fee for grant paid | 12.04.1991 | Fee for publishing/printing paid | Opposition(s) | 25.04.1992 | No opposition filed within time limit [1992/29] | Fees paid | Renewal fee | 13.01.1986 | Renewal fee patent year 03 | 14.01.1987 | Renewal fee patent year 04 | 19.01.1988 | Renewal fee patent year 05 | 13.01.1989 | Renewal fee patent year 06 | 17.01.1990 | Renewal fee patent year 07 | 17.12.1990 | Renewal fee patent year 08 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | NL | 24.07.1991 | [1992/09] | Documents cited: | Search | [A]JP5791581 ; | [A]JP5669885 ; | [X]EP0069563 (HITACHI LTD [JP]); | [A]US4366568 (SHIMIZU HIROKAZU, et al); | [A]EP0002827 (WESTERN ELECTRIC CO [US]); | [E]JPS5980984 (HITACHI LTD) | [A] - PATENTS ABSTRACTS OF JAPAN, vol. 6, no. 176 (E-130)[1054], 10th September 1982; & JP-A-57 91581 (SHARP K.K.) 07.06.1982, & JP5791581 A 00000000 | [A] - PATENTS ABSTRACTS OF JAPAN, vol. 5, no. 133 (E-71)[805], 25th August 1981; & JP-A-56 69885 (TOKYO SHIBAURA DENKI K.K.) 11-06-1981, & JP5669885 A 00000000 | [AD] - IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. QE-11, no. 7, July 1975, pages 432-435, New York, US; T.P. LEE et al.: "AlxGa1-xAs double-heterostructure rib-waveguide injection laser" |