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EP0121351
European procedure
Extract from the Register of European Patents
EP About this file: EP0121351
| EP0121351 - Method of manufacturing MOS type semiconductor devices [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 31.03.1989 Database last updated on 04.11.2024 | Most recent event Tooltip | 31.03.1989 | No opposition filed within time limit | published on 17.05.1989 [1989/20] | Applicant(s) | For all designated states Oki Electric Industry Company, Limited 7-12, Toranomon 1-chome Minato-ku Tokyo 105 / JP | [N/P] |
| Former [1984/41] | For all designated states Oki Electric Industry Company, Limited 7-12, Toranomon 1-chome Minato-ku Tokyo 105 / JP | Inventor(s) | 01 /
Yoshioka, Kentaro OKi Electr. Ind. Co. Ltd. 7-12, Toranomon 1-chome Minato-ku Tokyo / JP | [1984/41] | Representative(s) | Crawford, Andrew Birkby, et al A.A. Thornton & Co. 235 High Holborn London WC1V 7LE / GB | [N/P] |
| Former [1984/41] | Crawford, Andrew Birkby, et al A.A. THORNTON & CO. Northumberland House 303-306 High Holborn London WC1V 7LE / GB | Application number, filing date | 84301436.6 | 05.03.1984 | [1984/41] | Priority number, date | JP19830034426 | 04.03.1983 Original published format: JP 3442683 | [1984/41] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0121351 | Date: | 10.10.1984 | Language: | EN | [1984/41] | Type: | B1 Patent specification | No.: | EP0121351 | Date: | 01.06.1988 | Language: | EN | [1988/22] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 03.07.1984 | Classification | IPC: | H01L21/28, H01L21/76 | [1984/41] | CPC: |
H01L29/66575 (EP,US);
H01L21/762 (EP,US);
H01L29/41783 (EP,US)
| Designated contracting states | DE, GB, NL [1984/41] | Title | German: | Verfahren zum Herstellen von MOS-Halbleiterbauelementen | [1984/41] | English: | Method of manufacturing MOS type semiconductor devices | [1984/41] | French: | Procédé de fabrication de dispositifs semi-conducteurs MOS | [1984/41] | File destroyed: | 12.06.1999 | Examination procedure | 23.11.1984 | Examination requested [1985/06] | 15.07.1986 | Despatch of a communication from the examining division (Time limit: M04) | 26.11.1986 | Reply to a communication from the examining division | 18.08.1987 | Despatch of communication of intention to grant (Approval: ) | 27.11.1987 | Communication of intention to grant the patent | 21.01.1988 | Fee for grant paid | 21.01.1988 | Fee for publishing/printing paid | Opposition(s) | 02.03.1989 | No opposition filed within time limit [1989/20] | Request for further processing for: | 22.12.1986 | Request for further processing filed | 29.12.1986 | Full payment received (date of receipt of payment) Request granted | 30.01.1987 | Decision despatched | Fees paid | Renewal fee | 20.03.1986 | Renewal fee patent year 03 | 09.03.1987 | Renewal fee patent year 04 | 07.03.1988 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | US3984822 [ ] (SIMKO RICHARD T, et al); | US4282647 [ ] (RICHMAN PAUL); | EP0012863 [ ] (IBM [US]) |