EP0144444 - METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 29.12.1992 Database last updated on 16.07.2024 | Most recent event Tooltip | 29.12.1992 | No opposition filed within time limit | published on 17.02.1993 [1993/07] | Applicant(s) | For all designated states Sony Corporation 7-35 Kitashinagawa 6-chome Shinagawa-ku Tokyo 141 / JP | [N/P] |
Former [1985/25] | For all designated states SONY CORPORATION 7-35 Kitashinagawa 6-chome Shinagawa-ku Tokyo 141 / JP | Inventor(s) | 01 /
OUCHI, Norikazu Sony Corporation 7-35, Kitashinagawa 6-chome Shinagawa-ku Tokyo 141 / JP | 02 /
KAYANUMA, Akio Sony Corporation 7-35, Kitashinagawa 6-chome Shinagawa-ku Tokyo 141 / JP | 03 /
ASANO, Katsuaki Sony Corporation 7-35, Kitashinagawa 6-chome Shinagawa-ku Tokyo 141 / JP | [1985/25] | Representative(s) | Cotter, Ivan John, et al D Young & Co LLP 120 Holborn London EC1N 2DY / GB | [N/P] |
Former [1985/25] | Cotter, Ivan John, et al D. YOUNG & CO. 21 New Fetter Lane London EC4A 1DA / GB | Application number, filing date | 84902071.4 | 25.05.1984 | [1985/25] | WO1984JP00271 | Priority number, date | JP19830092697 | 26.05.1983 Original published format: JP 9269783 | [1985/25] | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO8404853 | Date: | 06.12.1984 | Language: | EN | [1984/28] | Type: | A1 Application with search report | No.: | EP0144444 | Date: | 19.06.1985 | Language: | EN | The application published by WIPO in one of the EPO official languages on 06.12.1984 takes the place of the publication of the European patent application. | [1985/25] | Type: | B1 Patent specification | No.: | EP0144444 | Date: | 26.02.1992 | Language: | EN | [1992/09] | Search report(s) | International search report - published on: | JP | 06.12.1984 | (Supplementary) European search report - dispatched on: | EP | 08.12.1987 | Classification | IPC: | H01L29/72 | [1985/25] | CPC: |
H01L21/033 (EP,US);
H01L29/72 (EP,US);
H01L29/7325 (EP,US);
Y10S148/026 (EP,US);
Y10S148/05 (EP,US);
Y10S148/103 (EP,US);
Y10S148/106 (EP,US)
(-)
| Designated contracting states | DE, FR, GB, NL [1985/25] | Title | German: | HERSTELLUNGSVERFAHREN FÜR HALBLEITERVORRICHTUNG | [1985/25] | English: | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | [1985/25] | French: | PROCEDE DE FABRICATION D'UN DISPOSITIF A SEMI-CONDUCTEUR | [1985/25] | Entry into regional phase | 09.01.1985 | Translation filed | 02.02.1985 | National basic fee paid | 02.02.1985 | Search fee paid | 02.02.1985 | Designation fee(s) paid | 02.02.1985 | Examination fee paid | Examination procedure | 02.02.1985 | Examination requested [1985/25] | 01.10.1990 | Despatch of a communication from the examining division (Time limit: M06) | 06.04.1991 | Reply to a communication from the examining division | 14.05.1991 | Despatch of communication of intention to grant (Approval: Yes) | 31.07.1991 | Communication of intention to grant the patent | 26.09.1991 | Fee for grant paid | 26.09.1991 | Fee for publishing/printing paid | Opposition(s) | 27.11.1992 | No opposition filed within time limit [1993/07] | Fees paid | Renewal fee | 17.05.1986 | Renewal fee patent year 03 | 15.05.1987 | Renewal fee patent year 04 | 12.05.1988 | Renewal fee patent year 05 | 17.05.1989 | Renewal fee patent year 06 | 17.05.1990 | Renewal fee patent year 07 | 21.12.1990 | Renewal fee patent year 08 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US4251300 (CALDWELL ROBERT E); | [X]EP0045848 (IBM [US]) | [A] - JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 19, supplement 19-1, 1980, pages 181-185, Tokyo, JP; H. SAKURAI et al.: "A new transistor structure for high speed bipolar LSI" | [A] - EXTENDED ABSTRACTS OF THE JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 73-1, 1973, pages 426-428, abstract no. 172, Princeton, US; R. EDWARDS et al.: "Oxide isolation technology featuring ion implantation and partially self-registered emitters" | International search | [Y]JPS5011676 ; | [Y]JPS5539677 (CHO LSI GIJUTSU KENKYU KUMIAI) |