-
EP0158292
European procedure
Extract from the Register of European Patents
EP About this file: EP0158292
| EP0158292 - Semiconductor device having a drive circuit element and an output transistor [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 20.06.1991 Database last updated on 09.04.2026 | Most recent event Tooltip | 20.06.1991 | No opposition filed within time limit | published on 07.08.1991 [1991/32] | Applicant(s) | For all designated states Kabushiki Kaisha Toshiba 72, Horikawa-cho Saiwai-ku Kawasaki-shi Kanagawa-ken 210-8572 / JP | [N/P] |
| Former [1985/42] | For all designated states KABUSHIKI KAISHA TOSHIBA 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP | Inventor(s) | 01 /
Ohata, Yu c/o Patent Division Kabushiki Kaisha Toshiba 1-1 Shibaura 1-chome Minato-ku Tokyo 105 / JP | 02 /
Kuramoto, Tsuyoshi c/o Patent Division Kabushiki Kaisha Toshiba 1-1 Shibaura 1-chome Minato-ku Tokyo 105 / JP | [1985/42] | Representative(s) | Lehn, Werner, et al Hoffmann Eitle, Patent- und Rechtsanwälte, Postfach 81 04 20 81904 München / DE | [N/P] |
| Former [1985/42] | Lehn, Werner, Dipl.-Ing., et al Hoffmann, Eitle & Partner, Patentanwälte, Postfach 81 04 20 D-81904 München / DE | Application number, filing date | 85104142.6 | 04.04.1985 | [1985/42] | Priority number, date | JP19840067081 | 04.04.1984 Original published format: JP 6708184 | [1985/42] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0158292 | Date: | 16.10.1985 | Language: | EN | [1985/42] | Type: | A3 Search report | No.: | EP0158292 | Date: | 27.05.1987 | Language: | EN | [1987/22] | Type: | B1 Patent specification | No.: | EP0158292 | Date: | 16.08.1990 | Language: | EN | [1990/33] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 08.04.1987 | Classification | IPC: | H01L27/06, H01L29/78, H01L21/76, H01L21/74 | [1985/42] | CPC: |
H10D84/0109 (EP,US);
H10D84/038 (EP,US);
H10D12/441 (EP,US);
H10D84/401 (EP,US);
H10W10/031 (EP,US);
H10W10/30 (EP,US);
| Designated contracting states | DE, FR, GB [1985/42] | Title | German: | Halbleiteranordnung mit einem Treiberschaltungselement und einem Ausgangstransistor | [1985/42] | English: | Semiconductor device having a drive circuit element and an output transistor | [1985/42] | French: | Dispositif semi-conducteur comportant un élément de circuit driver et un transistor de sortie | [1985/42] | Examination procedure | 04.04.1985 | Examination requested [1985/42] | 03.03.1989 | Despatch of a communication from the examining division (Time limit: M06) | 05.09.1989 | Reply to a communication from the examining division | 01.12.1989 | Despatch of communication of intention to grant (Approval: Yes) | 16.02.1990 | Communication of intention to grant the patent | 10.05.1990 | Fee for grant paid | 10.05.1990 | Fee for publishing/printing paid | Opposition(s) | 17.05.1991 | No opposition filed within time limit [1991/32] | Fees paid | Renewal fee | 15.04.1987 | Renewal fee patent year 03 | 15.04.1988 | Renewal fee patent year 04 | 11.04.1989 | Renewal fee patent year 05 | 17.04.1990 | Renewal fee patent year 06 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y] ELECTRONIC DESIGN, vol. 30, no. 7, 31st March 1982, pages 69-77, Hasbrauck Heights, New Jersey, US; T.E. RUGGLES et al.: "Mixed process puts high power under fine control" [Y] | [A] IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-30, no. 12, December 1983, pages 1785-1791, IEEE, New York, US; T. FUKUSHIMA et al.: "An advanced SVG technology for 64K junction-shorting PROM's" [A] | [XP] ELECTRONIC DESIGN, vol. 33, no. 4, 21st February 1985, pages 191-194,196,198, Hasbrouck Heights, New Jersey, US; W. SCHULTZ et al.: "Mixed MOS devices unite in a switch chip that links power with smarts" [XP] | [X] NEW ELECTRONICS, vol. 17, no. 4, 21st February 1984, pages 58,59, London, GB; P. ALOISI: "The power integrated circuit" [X] |