EP0189486 - METHOD OF PRODUCING BIPOLAR SEMICONDUCTOR DEVICES [Right-click to bookmark this link] | |||
Former [1986/32] | METHOD OF PRODUCING SEMICONDUCTOR DEVICES | ||
[1993/40] | Status | No opposition filed within time limit Status updated on 06.08.1994 Database last updated on 24.08.2024 | Most recent event Tooltip | 17.02.2006 | Change - lapse in a contracting state Updated state(s): FR | published on 05.04.2006 [2006/14] | Applicant(s) | For all designated states Hitachi, Ltd. 6, Kanda Surugadai 4-chome Chiyoda-ku Tokyo / JP | [N/P] |
Former [1986/32] | For all designated states HITACHI, LTD. 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 100 / JP | Inventor(s) | 01 /
TAMAKI, Yoichi 3-4-2-606, Izumi-cho Kokubunji-shi Tokyo / JP | 02 /
SAGARA, Kazuhiko 2-12-19, Amanuma Suginami-ku Tokyo / JP | 03 /
HASEGAWA, Norio 2196-173, Hirai Hinode-machi Nishitama-gun, Tokyo / JP | 04 /
OKAZAKI, Shinji 6-21-4, Kamikizaki Urawa-shi Saitama-ken 338 / JP | 05 /
TAKAKURA, Toshihiko 5-8-39, Maehara-cho Koganei-shi Tokyo / JP | 06 /
NISHIZAWA, Hirotaka 657-5, Nogami Ome-shi Tokyo / JP | [1993/40] |
Former [1986/32] | 01 /
TAMAKI, Yoichi 3-4-2-606, Izumi-cho Kokubunji-shi Tokyo / JP | ||
02 /
SAGARA, Kazuhiko 2-12-19, Amanuma Suginami-ku Tokyo / JP | |||
03 /
HASEGAWA, Norio 2196-173, Hirai Hinode-machi Nisitama-gun Tokyo / JP | |||
04 /
OKAZAKI, Shinji 6-21-4, Kamikizaki Urawa-shi Saitama-ken 338 / JP | |||
05 /
TAKAKURA, Toshihiko 5-8-39, Maehara-cho Koganei-shi Tokyo / JP | |||
06 /
NISHIZAWA, Hirotaka 657-5, Nogami Ome-shi Tokyo / JP | Representative(s) | Strehl Schübel-Hopf & Partner Maximilianstrasse 54 80538 München / DE | [N/P] |
Former [1986/32] | Strehl Schübel-Hopf Groening & Partner Maximilianstrasse 54 D-80538 München / DE | Application number, filing date | 85903877.0 | 31.07.1985 | [1986/32] | WO1985JP00432 | Priority number, date | JP19840166355 | 10.08.1984 Original published format: JP 16635584 | [1986/32] | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO8601338 | Date: | 27.02.1986 | Language: | EN | [1986/05] | Type: | A1 Application with search report | No.: | EP0189486 | Date: | 06.08.1986 | Language: | EN | The application published by WIPO in one of the EPO official languages on 27.02.1986 takes the place of the publication of the European patent application. | [1986/32] | Type: | B1 Patent specification | No.: | EP0189486 | Date: | 06.10.1993 | Language: | EN | [1993/40] | Search report(s) | International search report - published on: | JP | 27.02.1986 | (Supplementary) European search report - dispatched on: | EP | 20.01.1987 | Classification | IPC: | H01L29/72, H01L29/40 | [1986/32] | CPC: |
H01L21/033 (EP,US);
H01L29/72 (KR);
H01L21/28525 (EP,US);
H01L29/0804 (EP,US);
Y10S438/98 (EP,US)
| Designated contracting states | DE, FR, GB [1986/32] | Title | German: | VERFAHREN ZUR HERSTELLUNG VON BIPOLAREN HALBLEITERANORDNUNGEN | [1993/40] | English: | METHOD OF PRODUCING BIPOLAR SEMICONDUCTOR DEVICES | [1993/40] | French: | PROCEDE DE PRODUCTION DE DISPOSITIFS A SEMI-CONDUCTEURS BIPOLAIRES | [1993/40] |
Former [1986/32] | VERFAHREN ZUR HERSTELLUNG VON HALBLEITERANORDNUNG | ||
Former [1986/32] | METHOD OF PRODUCING SEMICONDUCTOR DEVICES | ||
Former [1986/32] | PROCEDE DE PRODUCTION DE DISPOSITIFS A SEMI-CONDUCTEURS | File destroyed: | 20.04.2002 | Entry into regional phase | 06.03.1986 | Translation filed | 18.03.1986 | National basic fee paid | 18.03.1986 | Search fee paid | 18.03.1986 | Designation fee(s) paid | 18.03.1986 | Examination fee paid | Examination procedure | 18.03.1986 | Examination requested [1986/32] | 25.07.1989 | Despatch of a communication from the examining division (Time limit: M04) | 23.10.1989 | Reply to a communication from the examining division | 21.11.1989 | Despatch of a communication from the examining division (Time limit: M06) | 01.06.1990 | Reply to a communication from the examining division | 05.05.1992 | Despatch of a communication from the examining division (Time limit: M02) | 15.07.1992 | Reply to a communication from the examining division | 06.10.1992 | Despatch of communication of intention to grant (Approval: Yes) | 25.02.1993 | Communication of intention to grant the patent | 29.03.1993 | Fee for grant paid | 29.03.1993 | Fee for publishing/printing paid | Opposition(s) | 07.07.1994 | No opposition filed within time limit [1994/39] | Fees paid | Renewal fee | 29.07.1987 | Renewal fee patent year 03 | 29.07.1988 | Renewal fee patent year 04 | 28.07.1989 | Renewal fee patent year 05 | 30.07.1990 | Renewal fee patent year 06 | 29.07.1991 | Renewal fee patent year 07 | 28.07.1992 | Renewal fee patent year 08 | 29.07.1993 | Renewal fee patent year 09 |
Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | FR | 06.10.1993 | [2006/14] |
Former [1995/02] | FR | 25.02.1994 | Documents cited: | Search | [A]US4392149 (HORNG CHENG T, et al); | [A]US4236294 (ANANTHA NARASIPUR G, et al); | [A]US4066473 (O'BRIEN DAVID) | [A] - IBM TECHNICAL DISCLOSURE BULLETIN, vol. 21, no. 3, August 1978, pages 1023-1024, New York, US; C.H. LEE: "Bipolar transistor" | International search | [A]JPS517398B ; | [A]JPS5466076 (IBM); | [A]JPS58142573 (HITACHI LTD); | [A]JPS59105363 (NIPPON ELECTRIC CO); | [A]JPS6097626 (HITACHI LTD) | [X] - IBM-Technical Disclosure Bulletin, Vol. 22, No. 9, February 1980 (New York), T.H. Yeh "Self-ALigned Integrated NPN (Vertical) and PNP (Lateral) Structures", p. 4047-4051 | [A] - Handotai Handbook Hensan Iinkai Hen "Handotai Handbook" 2nd Edition, 30 November 1977 (30. 11. 77), the Ohm-Sha, Ltd. p. 304-307 | Examination | EP0001550 |