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EP0197078
European procedure
Extract from the Register of European Patents
EP About this file: EP0197078
| EP0197078 - METHOD FOR MAKING MONOCRYSTALLINE SILICON ISLANDS ELECTRICALLY ISOLATED FROM EACH OTHER [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 29.12.1990 Database last updated on 12.07.2024 | Most recent event Tooltip | 29.12.1990 | No opposition filed within time limit | published on 20.02.1991 [1991/08] | Applicant(s) | For all designated states Haond, Michel 9, rue des Lilas F-38240 Meylan / FR | For all designated states Colinge, Jean-Pierre 5 av. du Vercors F-38240 Meylan / FR | For all designated states Bensahel, Daniel 32 rue Lachman F-38000 Grenoble / FR | For all designated states DUTARTRE, Didier 4, allée du Bret F-38240 Meylan / FR | [1986/42] | Inventor(s) | 01 /
see applicant ... | [1986/42] | Representative(s) | Mongrédien, André, et al c/o BREVATOME 25, rue de Ponthieu F-75008 Paris / FR | [1986/42] | Application number, filing date | 85904827.4 | 01.10.1985 | [1986/42] | WO1985FR00270 | Priority number, date | FR19840015302 | 05.10.1984 Original published format: FR 8415302 | [1986/42] | Filing language | FR | Procedural language | FR | Publication | Type: | A1 Application with search report | No.: | WO8602198 | Date: | 10.04.1986 | Language: | FR | [1986/08] | Type: | A1 Application with search report | No.: | EP0197078 | Date: | 15.10.1986 | Language: | FR | The application published by WIPO in one of the EPO official languages on 10.04.1986 takes the place of the publication of the European patent application. | [1986/42] | Type: | B1 Patent specification | No.: | EP0197078 | Date: | 07.03.1990 | Language: | FR | [1990/10] | Search report(s) | International search report - published on: | EP | 10.04.1986 | Classification | IPC: | H01L21/20, H01L21/76, H01L21/324 | [1986/42] | CPC: |
H01L21/76264 (EP,US);
H01L21/02381 (EP,US);
H01L21/02488 (EP,US);
H01L21/02532 (EP,US);
H01L21/02587 (EP,US);
H01L21/0262 (EP,US);
| Designated contracting states | DE, FR, GB [1986/42] | Title | German: | VERFAHREN ZUR HERSTELLUNG VON GEGENSEITIG ISOLIERTEN INSELN AUS MONOKRISTALLINEM SILIZIUM | [1986/42] | English: | METHOD FOR MAKING MONOCRYSTALLINE SILICON ISLANDS ELECTRICALLY ISOLATED FROM EACH OTHER | [1986/42] | French: | PROCEDE DE FABRICATION D'ILOTS DE SILICIUM MONOCRISTALLIN ISOLES ELECTRIQUEMENT LES UNS DES AUTRES | [1986/42] | File destroyed: | 12.06.1999 | Entry into regional phase | 28.05.1986 | National basic fee paid | 28.05.1986 | Designation fee(s) paid | 28.05.1986 | Examination fee paid | Examination procedure | 28.05.1986 | Examination requested [1986/42] | 19.07.1988 | Despatch of a communication from the examining division (Time limit: M04) | 19.08.1988 | Reply to a communication from the examining division | 01.02.1989 | Despatch of communication of intention to grant (Approval: Yes) | 20.04.1989 | Communication of intention to grant the patent | 05.06.1989 | Fee for grant paid | 05.06.1989 | Fee for publishing/printing paid | Opposition(s) | 08.12.1990 | No opposition filed within time limit [1991/08] | Fees paid | Renewal fee | 21.10.1987 | Renewal fee patent year 03 | 28.10.1988 | Renewal fee patent year 04 | 20.10.1989 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | DE3221304 [ ] (ITT IND GMBH DEUTSCHE [DE]); | US4507158 [ ] (KAMINS THEODORE I [US], et al) | [Y] - International Electron Devices Meeting Washington D.C., 8-9-10 December 1980, IEDM Technical Digest, New York, (US) H.W. LAM et al.: "MOSFETs Fabricated in (100) Single Crystal Silicon-on-Oxide Obtained by a Laser-Induced Lateral Seeding Technique", pages 559-561, see page 559, column 1, Paragraph 5 - page 560, column 1, Paragraph 6 | [Y] - International Electron Devices Meeting San Francisco C.A., 13-14-15 December 1982, IEDM Technical Digest, IEEE, New York, (US) S.D.S. MALHI et al.: "SOI CMOS Circuit Performance on Graphite Strip Heater Recrystallized Material", pages 441-443, see page 441, column 1, Paragraph 3 - page 442, column 1, Paragraph 3 | [Y] - Japanese Journal of Applied Physics, Supplements 1983, Supplement 15th Conference Tokyo, (JP) H. YAMAMOTO et al.: "Growth Conditions of Evaporated Amorphous si Films into SIO2 Patterns by Lateral solid Phase Epitaxy", pages 89-92, see page 89, Abstract | [A] - IBM Technical Disclosure Bulletin, Volume 24, No. 7 beta, December 1981, New York, (US) V.J. SILVESTRI: "Silicon-Silicon Dioxide-Silicon Structures", pages 3689-3690, see figures 1-6; 3690, Paragraph 2 | [A] - Journal of the Electrochemical Society, Volume 131, No. 8, August 1984, Manchester, New Hampshire (US) D.R. BRADBURY et al.: "Device Isolation in Lateral CVD Epitaxial Silicon-on-Insulator", page 320C, see Abstract No. 523 | Examination | EP0141506 | - IBM Technical Disclosure Bulletin, volume 24, No. 78, December 1981, New York, (US) V.J. Silvestri: "Silicon-Silicon Dioxide-Silicon structures", pages 3689-3690 |