EP0204752 - PROCESS FOR FORMING DIFFUSION REGIONS IN A SEMICONDUCTOR SUBSTRATE [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 25.08.1990 Database last updated on 19.10.2024 | Most recent event Tooltip | 25.08.1990 | No opposition filed within time limit | published on 17.10.1990 [1990/42] | Applicant(s) | For all designated states NCR CORPORATION World Headquarters Dayton, Ohio 45479 / US | [1986/51] | Inventor(s) | 01 /
COLLINS, George, Joseph 807 West Oak Street Fort Collins, CO 80521 / US | 02 /
METZ, Werner, Adam, Jr. 3518 Camelot Drive Fort Collins, CO 80525 / US | [1986/51] | Representative(s) | Robinson, Robert George International Intellectual Property Department, NCR Limited, 206 Marylebone Road London NW1 6LY / GB | [N/P] |
Former [1986/51] | Robinson, Robert George International Patent Department NCR Limited 206 Marylebone Road London NW1 6LY / GB | Application number, filing date | 85906019.6 | 25.11.1985 | [1986/51] | WO1985US02302 | Priority number, date | US19840680034 | 10.12.1984 Original published format: US 680034 | [1986/51] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | WO8603620 | Date: | 19.06.1986 | [1986/13] | Type: | A1 Application with search report | No.: | EP0204752 | Date: | 17.12.1986 | Language: | EN | The application published by WIPO in one of the EPO official languages on 19.06.1986 takes the place of the publication of the European patent application. | [1986/51] | Type: | B1 Patent specification | No.: | EP0204752 | Date: | 02.11.1989 | Language: | EN | [1989/44] | Search report(s) | International search report - published on: | EP | 31.07.1986 | Classification | IPC: | H01L21/225, H01L21/76 | [1986/51] | CPC: |
H01L21/76237 (EP,US);
H01L21/2255 (EP,US);
H01L29/945 (EP,US)
| Designated contracting states | DE, GB, NL [1986/51] | Title | German: | VERFAHREN ZUR HERSTELLUNG VON DIFFUSIONSZONEN | [1986/51] | English: | PROCESS FOR FORMING DIFFUSION REGIONS IN A SEMICONDUCTOR SUBSTRATE | [1986/51] | French: | PROCEDE DE FORMATION DE REGIONS DE DIFFUSION DANS UN SUBSTRAT SEMICONDUCTEUR | [1986/51] | Entry into regional phase | 29.07.1986 | National basic fee paid | 29.07.1986 | Designation fee(s) paid | 04.12.1986 | Examination fee paid | Examination procedure | 04.12.1986 | Examination requested [1987/05] | 11.04.1989 | Despatch of communication of intention to grant (Approval: Yes) | 27.04.1989 | Communication of intention to grant the patent | 08.05.1989 | Fee for grant paid | 08.05.1989 | Fee for publishing/printing paid | Opposition(s) | 03.08.1990 | No opposition filed within time limit [1990/42] | Fees paid | Renewal fee | 06.11.1987 | Renewal fee patent year 03 | 17.11.1988 | Renewal fee patent year 04 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | EP0010633 [ ] (IBM [US]); | EP0068071 [ ] (ROCKWELL INTERNATIONAL CORP [US]); | WO8504760 [ ] (AMERICAN TELEPHONE & TELEGRAPH [US]) | [A] - IBM Technical Disclosure Bulletin, Volume 25, No. 12, May 1983, New York, (US) K.D. BEYER et al.: "SBD Guard Ring Scheme", see figures 1-2 |