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Extract from the Register of European Patents

EP About this file: EP0204752

EP0204752 - PROCESS FOR FORMING DIFFUSION REGIONS IN A SEMICONDUCTOR SUBSTRATE [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  25.08.1990
Database last updated on 19.10.2024
Most recent event   Tooltip25.08.1990No opposition filed within time limitpublished on 17.10.1990 [1990/42]
Applicant(s)For all designated states
NCR CORPORATION
World Headquarters
Dayton, Ohio 45479 / US
[1986/51]
Inventor(s)01 / COLLINS, George, Joseph
807 West Oak Street
Fort Collins, CO 80521 / US
02 / METZ, Werner, Adam, Jr.
3518 Camelot Drive
Fort Collins, CO 80525 / US
[1986/51]
Representative(s)Robinson, Robert George
International Intellectual Property Department, NCR Limited, 206 Marylebone Road
London NW1 6LY / GB
[N/P]
Former [1986/51]Robinson, Robert George
International Patent Department NCR Limited 206 Marylebone Road
London NW1 6LY / GB
Application number, filing date85906019.625.11.1985
[1986/51]
WO1985US02302
Priority number, dateUS1984068003410.12.1984         Original published format: US 680034
[1986/51]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report
No.:WO8603620
Date:19.06.1986
[1986/13]
Type: A1 Application with search report 
No.:EP0204752
Date:17.12.1986
Language:EN
The application published by WIPO in one of the EPO official languages on 19.06.1986 takes the place of the publication of the European patent application.
[1986/51]
Type: B1 Patent specification 
No.:EP0204752
Date:02.11.1989
Language:EN
[1989/44]
Search report(s)International search report - published on:EP31.07.1986
ClassificationIPC:H01L21/225, H01L21/76
[1986/51]
CPC:
H01L21/76237 (EP,US); H01L21/2255 (EP,US); H01L29/945 (EP,US)
Designated contracting statesDE,   GB,   NL [1986/51]
TitleGerman:VERFAHREN ZUR HERSTELLUNG VON DIFFUSIONSZONEN[1986/51]
English:PROCESS FOR FORMING DIFFUSION REGIONS IN A SEMICONDUCTOR SUBSTRATE[1986/51]
French:PROCEDE DE FORMATION DE REGIONS DE DIFFUSION DANS UN SUBSTRAT SEMICONDUCTEUR[1986/51]
Entry into regional phase29.07.1986National basic fee paid 
29.07.1986Designation fee(s) paid 
04.12.1986Examination fee paid 
Examination procedure04.12.1986Examination requested  [1987/05]
11.04.1989Despatch of communication of intention to grant (Approval: Yes)
27.04.1989Communication of intention to grant the patent
08.05.1989Fee for grant paid
08.05.1989Fee for publishing/printing paid
Opposition(s)03.08.1990No opposition filed within time limit [1990/42]
Fees paidRenewal fee
06.11.1987Renewal fee patent year 03
17.11.1988Renewal fee patent year 04
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Cited inInternational searchEP0010633  [ ] (IBM [US]);
 EP0068071  [ ] (ROCKWELL INTERNATIONAL CORP [US]);
 WO8504760  [ ] (AMERICAN TELEPHONE & TELEGRAPH [US])
 [A]  - IBM Technical Disclosure Bulletin, Volume 25, No. 12, May 1983, New York, (US) K.D. BEYER et al.: "SBD Guard Ring Scheme", see figures 1-2
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.