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EP0192093
European procedure
Extract from the Register of European Patents
EP About this file: EP0192093
| EP0192093 - Semiconductor device and method of manufacturing the same [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 13.04.1991 Database last updated on 28.02.2026 | Most recent event Tooltip | 13.04.1991 | No opposition filed within time limit | published on 05.06.1991 [1991/23] | Applicant(s) | For all designated states Kabushiki Kaisha Toshiba 72, Horikawa-cho Saiwai-ku Kawasaki-shi Kanagawa-ken 210-8572 / JP | [N/P] |
| Former [1986/35] | For all designated states KABUSHIKI KAISHA TOSHIBA 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP | Inventor(s) | 01 /
Kobayashi, Kiyoshi Patent Division, K.K. TOSHIBA 1-1 Shibaura 1-ch. Minato-ku Tokyo 105 / JP | 02 /
Ochii, Kiyofumi Patent Division, K.K. TOSHIBA 1-1 Shibaura 1-ch. Minato-ku Tokyo 105 / JP | 03 /
Inatsuki, Tatsuya Patent Division, K.K. TOSHIBA 1-1 Shibaura 1-ch. Minato-ku Tokyo 105 / JP | [1986/35] | Representative(s) | Eitle, Werner, et al Hoffmann Eitle, Patent- und Rechtsanwälte, Postfach 81 04 20 81904 München / DE | [N/P] |
| Former [1986/35] | Eitle, Werner, Dipl.-Ing., et al Hoffmann, Eitle & Partner, Patent- und Rechtsanwälte, Postfach 81 04 20 D-81904 München / DE | Application number, filing date | 86101172.4 | 29.01.1986 | [1986/35] | Priority number, date | JP19850016139 | 30.01.1985 Original published format: JP 1613985 | JP19850016140 | 30.01.1985 Original published format: JP 1614085 | [1986/35] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0192093 | Date: | 27.08.1986 | Language: | EN | [1986/35] | Type: | B1 Patent specification | No.: | EP0192093 | Date: | 13.06.1990 | Language: | EN | [1990/24] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 03.07.1986 | Classification | IPC: | H01L27/10, H01L27/06 | [1986/35] | CPC: |
H10D84/406 (EP,US);
H10B10/00 (EP,US);
H10D88/00 (EP,US);
H10P32/14 (EP,US);
H10W20/01 (EP,US);
H10W20/4451 (EP,US)
| Designated contracting states | DE, FR, GB [1986/35] | Title | German: | Halbleitervorrichtung und Methode zu deren Herstellung | [1986/35] | English: | Semiconductor device and method of manufacturing the same | [1986/35] | French: | Dispositif semi-conducteur et procédé pour sa fabrication | [1986/35] | Miscellaneous | EPB 1990/24: Teilanmeldung 89116769.4 eingereicht am 29/01/86 | EPB 1990/24: Divisional application 89116769.4 filed on 29/01/86 | EPB 1990/24: Demande divisionnaire 89116769.4 déposée le 29/01/86 | Examination procedure | 29.01.1986 | Examination requested [1986/35] | 03.02.1988 | Despatch of a communication from the examining division (Time limit: M06) | 03.08.1988 | Reply to a communication from the examining division | 06.10.1988 | Despatch of a communication from the examining division (Time limit: M04) | 07.02.1989 | Reply to a communication from the examining division | 07.07.1989 | Despatch of communication of intention to grant (Approval: Yes) | 17.11.1989 | Communication of intention to grant the patent | 05.02.1990 | Fee for grant paid | 05.02.1990 | Fee for publishing/printing paid | Divisional application(s) | EP89116769.4 / EP0349021 | EP89116770.2 / EP0349022 | Opposition(s) | 14.03.1991 | No opposition filed within time limit [1991/23] | Fees paid | Renewal fee | 19.01.1988 | Renewal fee patent year 03 | 13.01.1989 | Renewal fee patent year 04 | 12.12.1989 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A] ELEKTRONIK, vol. 33, no. 26, 28th December 1984, page 26, Franzis Verlag, Mnchen, DE; H. LEMME: "HiBi-CMOS-Technologie der Zukunft?" [A] |