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Extract from the Register of European Patents

EP About this file: EP0197454

EP0197454 - Method for making semiconductor devices comprising insulating regions [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  02.06.1994
Database last updated on 14.11.2024
Most recent event   Tooltip02.06.1994No opposition filed within time limitpublished on 20.07.1994 [1994/29]
Applicant(s)For all designated states
Matsushita Electronics Corporation
1006, Oaza-Kadoma Kadoma-shi
Osaka 571-8501 / JP
[N/P]
Former [1986/42]For all designated states
Matsushita Electronics Corporation
1006, Oaza-Kadoma
Kadoma-shi, Osaka 571 / JP
Inventor(s)01 / Takebayashi, Koji
35-15, Higashiyosumi 1-chome
Takatsuki City, 569 / JP
[1986/42]
Representative(s)advotec.
Patent- und Rechtsanwaltspartnerschaft
Tappe mbB
Widenmayerstraße 4
80538 München / DE
[N/P]
Former [1986/42]Dr. Elisabeth Jung Dr. Jürgen Schirdewahn Dipl.-Ing. Claus Gernhardt
Postfach 40 14 68
D-80714 München / DE
Application number, filing date86104272.927.03.1986
[1986/42]
Priority number, dateJP1985006872701.04.1985         Original published format: JP 6872785
[1986/42]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0197454
Date:15.10.1986
Language:EN
[1986/42]
Type: A3 Search report 
No.:EP0197454
Date:07.11.1990
Language:EN
[1990/45]
Type: B1 Patent specification 
No.:EP0197454
Date:28.07.1993
Language:EN
[1993/30]
Search report(s)(Supplementary) European search report - dispatched on:EP18.09.1990
ClassificationIPC:H01L21/76, H01L21/316
[1990/49]
CPC:
H01L21/02164 (EP,US); H01L21/0217 (EP,US); H01L21/022 (EP,US);
H01L21/02216 (EP,US); H01L21/02255 (EP,US); H01L21/316 (US);
H01L21/76216 (EP,US); H01L29/0638 (EP,US); Y10S148/07 (EP,US);
Y10S148/085 (EP,US); Y10S438/975 (EP,US); Y10S438/978 (EP,US) (-)
Former IPC [1986/42]H01L21/316, H01L21/76
Designated contracting statesDE,   FR,   GB [1986/42]
TitleGerman:Verfahren zur Herstellung von Halbleiteranordnungen mit Isolationszonen[1986/42]
English:Method for making semiconductor devices comprising insulating regions[1986/42]
French:Procédé de fabrication de dispositifs semi-conducteurs comportant des régions d'isolation[1986/42]
Examination procedure10.12.1990Examination requested  [1991/06]
05.04.1991Despatch of a communication from the examining division (Time limit: M06)
14.10.1991Reply to a communication from the examining division
16.07.1992Despatch of communication of intention to grant (Approval: Yes)
03.11.1992Communication of intention to grant the patent
18.01.1993Fee for grant paid
18.01.1993Fee for publishing/printing paid
Opposition(s)29.04.1994No opposition filed within time limit [1994/29]
Fees paidRenewal fee
29.03.1988Renewal fee patent year 03
28.03.1989Renewal fee patent year 04
28.03.1990Renewal fee patent year 05
27.12.1990Renewal fee patent year 06
30.03.1992Renewal fee patent year 07
29.03.1993Renewal fee patent year 08
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Documents cited:Search[A]JP59124737  ;
 [A]JP59063741  ;
 [A]US4088516  (KONDO HIROYUKI, et al);
 [A]GB2123605  (STANDARD MICROSYST SMC)
 [A]  - PATENT ABSTRACTS OF JAPAN vol. 8, no. 247 (E-278)(1684) 13 November 1984, & JP-A-59 124737 (MATSUSHITA.) 18 July 1984,, & JP59124737 A 19840718
 [A]  - PATENT ABSTRACTS OF JAPAN vol. 8, no. 167 (E-258)(1604) 02 August 1984, & JP-A-59 063741 (MATSUSHITA.) 11 April 1984,, & JP59063741 A 19840411
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.