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Extract from the Register of European Patents

EP About this file: EP0261262

EP0261262 - Transverse junction stripe laser [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  17.04.1993
Database last updated on 03.09.2024
Most recent event   Tooltip23.11.2007Lapse of the patent in a contracting statepublished on 26.12.2007  [2007/52]
Applicant(s)For all designated states
International Business Machines Corporation
New Orchard Road
Armonk, NY 10504 / US
[N/P]
Former [1988/13]For all designated states
International Business Machines Corporation
Old Orchard Road
Armonk, N.Y. 10504 / US
Inventor(s)01 / Harder, Christoph Stefan
Renggerstrasse 16
CH-8038 Zurich / CH
02 / Jaeckel, Heinz
Vorbuehlstrasse 27
CH-8802 Kilchberg / CH
03 / Meier, Heinz
Langruetistrasse 1
CH-8800 Thalwil / CH
[1988/13]
Representative(s)Barth, Carl Otto, et al
IBM Corporation Intellectcual Property Department Säumerstrasse 4
8803 Rüschlikon / CH
[N/P]
Former [1992/04]Barth, Carl Otto, et al
IBM Corporation Säumerstrasse 4
CH-8803 Rüschlikon / CH
Former [1988/13]Schröder, Otto H., Dr. Ing.
IBM Corporation Säumerstrasse 4
CH-8803 Rüschlikon / CH
Application number, filing date86113081.323.09.1986
[1988/13]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0261262
Date:30.03.1988
Language:EN
[1988/13]
Type: B1 Patent specification 
No.:EP0261262
Date:17.06.1992
Language:EN
[1992/25]
Search report(s)(Supplementary) European search report - dispatched on:EP17.06.1987
ClassificationIPC:H01S3/19, H01S3/23
[1988/13]
CPC:
H01S5/2203 (EP,US); H01S5/305 (EP,US); H01S5/2235 (EP,US);
H01S5/2237 (EP,US); H01S5/3081 (EP,US); H01S5/4031 (EP,US)
Designated contracting statesDE,   FR,   GB,   IT [1988/13]
TitleGerman:Streifenlaser mit transversalem Übergang[1988/13]
English:Transverse junction stripe laser[1988/13]
French:Laser à jonction à canal transversal[1988/13]
Examination procedure29.07.1988Examination requested  [1988/38]
21.08.1991Despatch of communication of intention to grant (Approval: Yes)
02.12.1991Communication of intention to grant the patent
11.12.1991Fee for grant paid
11.12.1991Fee for publishing/printing paid
Opposition(s)18.03.1993No opposition filed within time limit [1993/23]
Fees paidRenewal fee
10.09.1988Renewal fee patent year 03
25.09.1989Renewal fee patent year 04
26.09.1990Renewal fee patent year 05
20.09.1991Renewal fee patent year 06
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Lapses during opposition  TooltipIT17.06.1992
[2007/52]
Former [1999/42]IT17.06.1992
Documents cited:Search[A]JP59167084  ;
 [A]EP0103415  ;
 [A]EP0067586  (HONEYWELL INC [US]);
 [A]US4334311  (OOMURA ETSUJI, et al);
 [A]EP0065818  (HITACHI LTD [JP])
 [AD]  - APPLIED PHYSICS LETTERS, vol. 47, no. 12, December 1985, pages 1309-1311, American Institute of Physics, Woodbury, New York, US; D.L.MILLER: "Lateral p-n junction formation in GaAs molecular beam epitaxy by crystal plane dependent doping"
 [A]  - PATENT ABSTRACTS OF JAPAN, vol. 9, no. 19 (E-292)[1742], 25th January 1985; & JP-A-59 167 084 (NIPPON DENSHIN DENWA KOSHA) 20-09-1984, & JP59167084 A 00000000
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.